Inventor · disambiguated record
Tetsuzo Ueda
Also filed as: UEDA TETSUZO
129 granted patents·31 pending applications·2,077 citations·filing 1997–2017
99Inventor score
Files withPANASONIC CORP72MATSUSHITA ELECTRIC INDUSTRIAL CO LTD33CBL TECHNOLOGIES INC9PANASONIC IP MAN CO LTD8HIKITA MASAHIRO6
Top patents by PatentIndex Score
160 records- 0198US7459377B2Method for dividing substratePANASONIC CORP·Filed 2005·Granted Dec 2, 2008·122 cites·14 claims
- 0297US7974322B2Nitride semiconductor laser diodePANASONIC CORP·Filed 2010·Granted Jul 5, 2011·27 cites·10 claims
- 0397US7576373B1Nitride semiconductor device and method for manufacturing the samePANASONIC CORP·Filed 2006·Granted Aug 18, 2009·62 cites·10 claims
- 0496US7956383B2Field effect transistorPANASONIC CORP·Filed 2008·Granted Jun 7, 2011·47 cites·8 claims
- 0596US7217960B2Semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2006·Granted May 15, 2007·36 cites·10 claims
- 0696US7198671B2Layered substrates for epitaxial processing, and deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2001·Granted Apr 3, 2007·130 cites·11 claims
- 0795US8076698B2Transistor and method for operating the sameUEDA DAISUKE·Filed 2006·Granted Dec 13, 2011·42 cites·5 claims
- 0895US7898002B2Nitride semiconductor device and method for fabricating the samePANASONIC CORP·Filed 2007·Granted Mar 1, 2011·30 cites·14 claims
- 0995US6673149B1Production of low defect, crack-free epitaxial films on a thermally and/or lattice mismatched substrateMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2000·Granted Jan 6, 2004·62 cites·22 claims
- 1095US6139628AMethod of forming gallium nitride crystalMATSUSHITA ELECTRONICS CORP·Filed 1998·Granted Oct 31, 2000·123 cites·13 claims
- 1194US7838904B2Nitride based semiconductor device with concave gate regionPANASONIC CORP·Filed 2008·Granted Nov 23, 2010·32 cites·4 claims
- 1294US7816707B2Field-effect transistor with nitride semiconductor and method for fabricating the samePANASONIC CORP·Filed 2006·Granted Oct 19, 2010·25 cites·14 claims
- 1394US7777305B2Nitride semiconductor device and manufacturing method thereofPANASONIC CORP·Filed 2008·Granted Aug 17, 2010·24 cites·6 claims
- 1494US7518153B2Nitride semiconductor light emitting devicePANASONIC CORP·Filed 2008·Granted Apr 14, 2009·35 cites·11 claims
- 1594US6676751B2Epitaxial film produced by sequential hydride vapor phase epitaxyCBL TECHNOLOGIES INC·Filed 2001·Granted Jan 13, 2004·78 cites·3 claims
- 1693US8164115B2Nitride semiconductor deviceHIKITA MASAHIRO·Filed 2011·Granted Apr 24, 2012·15 cites·5 claims
- 1793US7834380B2Field effect transistor and method for fabricating the samePANASONIC CORP·Filed 2005·Granted Nov 16, 2010·30 cites·15 claims
- 1893US7550821B2Nitride semiconductor devicePANASONIC CORP·Filed 2007·Granted Jun 23, 2009·29 cites·11 claims
- 1992US8441035B2Field effect transistor and method of manufacturing the sameHIKITA MASAHIRO·Filed 2011·Granted May 14, 2013·15 cites·18 claims
- 2092US7863649B2Nitride semiconductor device and method for fabricating the samePANASONIC CORP·Filed 2008·Granted Jan 4, 2011·17 cites·15 claims
- 2192US7569863B2Semiconductor light emitting devicePANASONIC CORP·Filed 2005·Granted Aug 4, 2009·21 cites·16 claims
- 2292US6179913B1Compound gas injection system and methodsCBL TECHNOLOGIES INC·Filed 1999·Granted Jan 30, 2001·76 cites·28 claims
- 2391US7873090B2Surface emitting laser, photodetector and optical communication system using the samePANASONIC CORP·Filed 2006·Granted Jan 18, 2011·15 cites·18 claims
- 2491US7279751B2Semiconductor laser device and manufacturing method thereofMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2005·Granted Oct 9, 2007·13 cites·2 claims
- 2590US8129748B2Nitride semiconductor device and method for fabricating the sameUEMOTO YASUHIRO·Filed 2007·Granted Mar 6, 2012·25 cites·19 claims
- 2690US7956368B2Semiconductor light emitting device, lighting module, lighting apparatus, and manufacturing method of semiconductor light emitting devicePANASONIC CORP·Filed 2009·Granted Jun 7, 2011·13 cites·9 claims
- 2790US7859087B2Semiconductor devicePANASONIC CORP·Filed 2009·Granted Dec 28, 2010·14 cites·7 claims
- 2890US7656010B2Semiconductor devicePANASONIC CORP·Filed 2007·Granted Feb 2, 2010·15 cites·5 claims
- 2989US10453776B2Semiconductor devicePANASONIC IP MAN CO LTD·Filed 2016·Granted Oct 22, 2019·6 cites·12 claims
- 3089US7800116B2Group III-nitride semiconductor device with a cap layerPANASONIC CORP·Filed 2008·Granted Sep 21, 2010·16 cites·25 claims
- 3189US7508001B2Semiconductor laser device and manufacturing method thereofPANASONIC CORP·Filed 2005·Granted Mar 24, 2009·11 cites·21 claims
- 3289US5928421AMethod of forming gallium nitride crystalMATSUSHITA ELECTRONICS CORP·Filed 1997·Granted Jul 27, 1999·98 cites·28 claims
- 3388US8692292B2Semiconductor device including separated gate electrode and conductive layerUMEDA HIDEKAZU·Filed 2012·Granted Apr 8, 2014·11 cites·12 claims
- 3488US7664151B2Nitride semiconductor laser diodePANASONIC CORP·Filed 2007·Granted Feb 16, 2010·9 cites·17 claims
- 3587US6919641B2Semiconductor device and method for fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2003·Granted Jul 19, 2005·44 cites·20 claims
- 3686US8283677B2Nitride semiconductor light-emitting deviceTAKIZAWA TOSHIYUKI·Filed 2009·Granted Oct 9, 2012·12 cites·13 claims
- 3786US7826512B2Semiconductor laser device including transparent electrodePANASONIC CORP·Filed 2007·Granted Nov 2, 2010·10 cites·10 claims
- 3886US7786491B2Semiconductor light-emitting device comprising a plurality of semiconductor layersPANASONIC CORP·Filed 2007·Granted Aug 31, 2010·12 cites·18 claims
- 3986US6887770B2Method for fabricating semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2003·Granted May 3, 2005·42 cites·46 claims
- 4085US9484342B2Semiconductor apparatusPANASONIC IP MAN CO LTD·Filed 2015·Granted Nov 1, 2016·5 cites·20 claims
- 4185US7825434B2Nitride semiconductor devicePANASONIC CORP·Filed 2006·Granted Nov 2, 2010·8 cites·9 claims
- 4285US7153715B2Semiconductor device and method for fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2005·Granted Dec 26, 2006·8 cites·1 claims
- 4385US7133431B2Semiconductor laser device and method for fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2003·Granted Nov 7, 2006·39 cites·7 claims
- 4484US8344423B2Nitride semiconductor device and method for fabricating the samePANASONIC CORP·Filed 2012·Granted Jan 1, 2013·6 cites·3 claims
- 4584US8039329B2Field effect transistor having reduced contact resistance and method for fabricating the samePANASONIC CORP·Filed 2010·Granted Oct 18, 2011·6 cites·5 claims
- 4684US7439595B2Field effect transistor having vertical channel structureMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2005·Granted Oct 21, 2008·11 cites·15 claims
- 4784US7411232B2Semiconductor photodetecting device and method of manufacturing the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2005·Granted Aug 12, 2008·8 cites·11 claims
- 4883US10529841B2Field effect transistorPANASONIC CORP·Filed 2016·Granted Jan 7, 2020·4 cites·12 claims
- 4983US8264002B2Field-effect transistorHIKITA MASAHIRO·Filed 2010·Granted Sep 11, 2012·5 cites·3 claims
- 5083US6355107B1Compound gas injection systemCBL TECHNOLOGIES INC·Filed 2000·Granted Mar 12, 2002·18 cites·9 claims
Showing the top 50 of 160 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →