Inventor · disambiguated record
Jung Sheng Hoei
Also filed as: HOEI JUNG S · HOEI JUNG SHENG
139 granted patents·8 pending applications·1,065 citations·filing 1993–2025
99Inventor score
Files withMICRON TECHNOLOGY INC105SARIN VISHAL20ROOHPARVAR FRANKIE F10INFORMATION STORAGE DEVICES3HOEI JUNG-SHENG2
Top patents by PatentIndex Score
147 records- 0198US8281061B2Data conditioning to improve flash memory reliabilityRADKE WILLIAM H·Filed 2008·Granted Oct 2, 2012·72 cites·25 claims
- 0298US7639532B2Non-equal threshold voltage ranges in MLC NANDMICRON TECHNOLOGY INC·Filed 2007·Granted Dec 29, 2009·94 cites·17 claims
- 0398US7633798B2M+N bit programming and M+L bit read for M bit memory cellsMICRON TECHNOLOGY INC·Filed 2007·Granted Dec 15, 2009·77 cites·25 claims
- 0497US10199111B1Memory devices with read level calibrationMICRON TECHNOLOGY INC·Filed 2017·Granted Feb 5, 2019·30 cites·27 claims
- 0597US9158612B2Refresh of non-volatile memory cells based on fatigue conditionsMICRON TECHNOLOGY INC·Filed 2013·Granted Oct 13, 2015·31 cites·21 claims
- 0697US7460398B1Programming a memory with varying bits per cellMICRON TECHNOLOGY INC·Filed 2007·Granted Dec 2, 2008·42 cites·20 claims
- 0796US11366760B2Memory access collision management on a shared wordlineMICRON TECHNOLOGY INC·Filed 2020·Granted Jun 21, 2022·5 cites·20 claims
- 0896US8707112B2Refresh of non-volatile memory cells based on fatigue conditionsROOHPARVAR FRANKIE F·Filed 2011·Granted Apr 22, 2014·27 cites·19 claims
- 0996US8060798B2Refresh of non-volatile memory cells based on fatigue conditionsROOHPARVAR FRANKIE F·Filed 2007·Granted Nov 15, 2011·37 cites·22 claims
- 1095US8006166B2Programming error correction code into a solid state memory device with varying bits per cellMICRON TECHNOLOGY INC·Filed 2007·Granted Aug 23, 2011·30 cites·20 claims
- 1195US7843725B2M+L bit read column architecture for M bit memory cellsMICRON TECHNOLOGY INC·Filed 2008·Granted Nov 30, 2010·33 cites·25 claims
- 1294US10446237B1Temperature sensitive NAND programmingMICRON TECHNOLOGY INC·Filed 2018·Granted Oct 15, 2019·13 cites·15 claims
- 1394US8254180B2Methods of operating memories including characterizing memory cell signal linesHOEI JUNG-SHENG·Filed 2011·Granted Aug 28, 2012·20 cites·26 claims
- 1493US11698864B2Memory access collision management on a shared wordlineMICRON TECHNOLOGY INC·Filed 2022·Granted Jul 11, 2023·2 cites·20 claims
- 1593US10318378B2Redundant array of independent NAND for a three-dimensional memory arrayMICRON TECHNOLOGY INC·Filed 2016·Granted Jun 11, 2019·9 cites·23 claims
- 1693US7751245B2Programming sequence in NAND memoryMICRON TECHNOLOGY INC·Filed 2007·Granted Jul 6, 2010·23 cites·22 claims
- 1792US11922029B2Modified read counter incrementing scheme in a memory sub-systemMICRON TECHNOLOGY INC·Filed 2022·Granted Mar 5, 2024·2 cites·20 claims
- 1892US11475974B2Memory device virtual blocks using half good blocksMICRON TECHNOLOGY INC·Filed 2021·Granted Oct 18, 2022·2 cites·20 claims
- 1992US8345482B2Methods for segmented programming and memory devicesMICRON TECHNOLOGY INC·Filed 2010·Granted Jan 1, 2013·14 cites·32 claims
- 2092US8023334B2Program window adjust for memory cell signal line delayMICRON TECHNOLOGY INC·Filed 2008·Granted Sep 20, 2011·23 cites·20 claims
- 2192US7751253B2Analog sensing of memory cells with a source follower driver in a semiconductor memory deviceMICRON TECHNOLOGY INC·Filed 2008·Granted Jul 6, 2010·20 cites·18 claims
- 2291US11081189B1Charge loss compensationMICRON TECHNOLOGY INC·Filed 2020·Granted Aug 3, 2021·3 cites·17 claims
- 2391US8400826B2Coarse and fine programming in a solid state memoryROOHPARVAR FRANKIE F·Filed 2012·Granted Mar 19, 2013·10 cites·20 claims
- 2491US7916536B2Programming based on controller performance requirementsMICRON TECHNOLOGY INC·Filed 2007·Granted Mar 29, 2011·19 cites·23 claims
- 2591US7830718B2Mitigation of data corruption from back pattern and program disturb in a non-volatile memory deviceMICRON TECHNOLOGY INC·Filed 2007·Granted Nov 9, 2010·19 cites·25 claims
- 2691US7817467B2Memory controller self-calibration for removing systemic influenceMICRON TECHNOLOGY INC·Filed 2007·Granted Oct 19, 2010·17 cites·27 claims
- 2791US7577036B2Non-volatile multilevel memory cells with data read of reference cellsMICRON TECHNOLOGY INC·Filed 2007·Granted Aug 18, 2009·20 cites·30 claims
- 2890US8719665B2Programming error correction code into a solid state memory device with varying bits per cellMICRON TECHNOLOGY INC·Filed 2013·Granted May 6, 2014·8 cites·22 claims
- 2990US8578244B2Programming error correction code into a solid state memory device with varying bits per cellMICRON TECHNOLOGY INC·Filed 2012·Granted Nov 5, 2013·9 cites·20 claims
- 3089US8111550B2M+N bit programming and M+L bit read for M bit memory cellsSARIN VISHAL·Filed 2011·Granted Feb 7, 2012·9 cites·41 claims
- 3189US7936599B2Coarse and fine programming in a solid state memoryMICRON TECHNOLOGY INC·Filed 2007·Granted May 3, 2011·14 cites·15 claims
- 3289US7898885B2Analog sensing of memory cells in a solid state memory deviceMICRON TECHNOLOGY INC·Filed 2007·Granted Mar 1, 2011·18 cites·17 claims
- 3388US11776655B2Memory device virtual blocks using half good blocksMICRON TECHNOLOGY INC·Filed 2022·Granted Oct 3, 2023·1 cites·20 claims
- 3488US11416154B2Partially written block treatmentMICRON TECHNOLOGY INC·Filed 2020·Granted Aug 16, 2022·2 cites·20 claims
- 3588US11037630B2NAND temperature data managementMICRON TECHNOLOGY INC·Filed 2020·Granted Jun 15, 2021·2 cites·20 claims
- 3688US8289779B2Memory cell sensing device equipped with a ramp voltage generator using a digital-to-analog converter (DAC) and counters, and sensing methods thereofHOEI JUNG-SHENG·Filed 2010·Granted Oct 16, 2012·14 cites·29 claims
- 3788US8103940B2Programming error correction code into a solid state memory device with varying bits per cellROOHPARVAR FRANKIE F·Filed 2011·Granted Jan 24, 2012·7 cites·15 claims
- 3887US10354732B2NAND temperature data managementMICRON TECHNOLOGY INC·Filed 2017·Granted Jul 16, 2019·5 cites·30 claims
- 3987US8687430B2Analog sensing of memory cells with a source follower driver in a semiconductor memory deviceMICRON TECHNOLOGY INC·Filed 2013·Granted Apr 1, 2014·7 cites·23 claims
- 4087US8107296B2Mitigation of data corruption from back pattern and program disturb in a non-volatile memory deviceSARIN VISHAL·Filed 2010·Granted Jan 31, 2012·8 cites·20 claims
- 4186US11132303B2Memory sub-system management of firmware block record and device block recordMICRON TECHNOLOGY INC·Filed 2020·Granted Sep 28, 2021·2 cites·20 claims
- 4286US10679704B2NAND temperature data managementMICRON TECHNOLOGY INC·Filed 2019·Granted Jun 9, 2020·4 cites·24 claims
- 4385US2025370634A1Modified read counter incrementing scheme in a memory sub-systemMICRON TECHNOLOGY INC·Filed 2025·Application pending·0 cites
- 4484US11437117B2NAND flash array defect real time detectionMICRON TECHNOLOGY INC·Filed 2020·Granted Sep 6, 2022·2 cites·15 claims
- 4584US8085596B2Reducing noise in semiconductor devicesSARIN VISHAL·Filed 2007·Granted Dec 27, 2011·11 cites·18 claims
- 4683US8441858B2Apparatus having a string of memory cellsSARIN VISHAL·Filed 2011·Granted May 14, 2013·6 cites·19 claims
- 4783US8385121B2Memory adapted to program a number of bits to a memory cell and read a different number of bits from the memory cellMICRON TECHNOLOGY INC·Filed 2010·Granted Feb 26, 2013·6 cites·35 claims
- 4882US12299304B2Automatic wordline status bypass managementMICRON TECHNOLOGY INC·Filed 2024·Granted May 13, 2025·0 cites·20 claims
- 4982US11488670B2Temperature sensitive NAND programmingMICRON TECHNOLOGY INC·Filed 2021·Granted Nov 1, 2022·1 cites·20 claims
- 5082US8291271B2Programming error correction code into a solid state memory device with varying bits per cellROOHPARVAR FRANKIE F·Filed 2012·Granted Oct 16, 2012·4 cites·20 claims
Showing the top 50 of 147 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →