Inventor · disambiguated record
Masatake Katayama
Also filed as: KATAYAMA MASATAKE
24 granted patents·709 citations·filing 1991–1999
97Inventor score
Top patents by PatentIndex Score
24 records- 0193US5749974AMethod of chemical vapor deposition and reactor thereforSHINETSU HANDOTAI KK·Filed 1995·Granted May 12, 1998·101 cites·4 claims
- 0285US6008128AMethod for smoothing surface of silicon single crystal substrateSHINETSU HANDOTAI KK·Filed 1998·Granted Dec 28, 1999·74 cites·3 claims
- 0381US5478408ASOI substrate and manufacturing method thereforSHINETSU HANDOTAI KK·Filed 1995·Granted Dec 26, 1995·63 cites·4 claims
- 0476US5650353AMethod for production of SOI substrateSHINETSU HANDOTAI KK·Filed 1995·Granted Jul 22, 1997·53 cites·2 claims
- 0576US5514235AMethod of making bonded wafersSHINETSU HANDOTAI KK·Filed 1994·Granted May 7, 1996·56 cites·5 claims
- 0674US5183783AMethod for production of dielectric-separation substrateSHINETSU HANDOTAI KK·Filed 1991·Granted Feb 2, 1993·52 cites·6 claims
- 0770US5755878AMethod for vapor phase growthSHINETSU HANDOTAI KK·Filed 1995·Granted May 26, 1998·30 cites·3 claims
- 0867US5427052AMethod and apparatus for production of extremely thin SOI film substrateSHINETSU HANDOTAI KK·Filed 1992·Granted Jun 27, 1995·36 cites·4 claims
- 0961US5223080AMethod for controlling thickness of single crystal thin-film layer in soi substrateSHINETSU HANDOTAI KK·Filed 1991·Granted Jun 29, 1993·29 cites·12 claims
- 1057US5938840AMethod for vapor phase growthSHINETSU HANDOTAI KK·Filed 1998·Granted Aug 17, 1999·17 cites·1 claims
- 1157US5376215AApparatus for production of extremely thin SOI film substrateSHINETSU HANDOTAI KK·Filed 1993·Granted Dec 27, 1994·23 cites·3 claims
- 1255US6254933B1Method of chemical vapor depositionSHIN ETSU HANDOTAI LTD·Filed 1999·Granted Jul 3, 2001·11 cites·10 claims
- 1355US5240883AMethod of fabricating soi substrate with uniform thin silicon filmSHINETSU HANDOTAI KK·Filed 1992·Granted Aug 31, 1993·25 cites·11 claims
- 1455US5124274AMethod for production of dielectric-separation substrateSHINETSU HANDOTAI KK·Filed 1991·Granted Jun 23, 1992·26 cites·2 claims
- 1554US5804494AMethod of fabricating bonded waferSHINETSU HANDOTAI KK·Filed 1996·Granted Sep 8, 1998·20 cites·20 claims
- 1648US5759426AHeat treatment jig for semiconductor wafers and a method for treating a surface of the sameSHINETSU HANDOTAI KK·Filed 1995·Granted Jun 2, 1998·11 cites·2 claims
- 1747US5998281ASOI wafer and method for the preparation thereofSHINETSU HANDOTAI KK·Filed 1996·Granted Dec 7, 1999·14 cites·4 claims
- 1845US5393370AMethod of making a SOI film having a more uniform thickness in a SOI substrateSHINETSU HANDOTAI KK·Filed 1993·Granted Feb 28, 1995·15 cites·9 claims
- 1945US5336634ADielectrically isolated substrate and a process for producing the sameSHIN ETSU HANDOTUI CO LTD·Filed 1993·Granted Aug 9, 1994·20 cites·5 claims
- 2040US5718762AMethod for vapor-phase growthSHINETSU HANDOTAI KK·Filed 1996·Granted Feb 17, 1998·5 cites·15 claims
- 2137US5538904AMethod of estimating quantity of boron at bonding interface in bonded waferSHINETSU HANDOTAI KK·Filed 1994·Granted Jul 23, 1996·8 cites·13 claims
- 2235US5171708AMethod of boron diffusion into semiconductor wafers having reduced stacking faultsSHINETSU HANDOTAI KK·Filed 1991·Granted Dec 15, 1992·11 cites·4 claims
- 2331US5696034AMethod for producing semiconductor substrateSHINETSU HANDOTAI KK·Filed 1995·Granted Dec 9, 1997·8 cites·12 claims
- 2430US6048793AMethod and apparatus for thin film growthSHINETSU HANDOTAI KK·Filed 1995·Granted Apr 11, 2000·1 cites·18 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →