Inventor · disambiguated record

Mizuki Segawa

Also filed as: SEGAWA MIZUKI

46 granted patents·2 pending applications·1,327 citations·filing 1990–2007

99Inventor score

Files withMATSUSHITA ELECTRIC INDUSTRIAL CO LTD45 MATSUSHITA ELECTIRC IND CO LTD1 MATSUSHITA ELECTTRIC IND CO LT1 PANASONIC CORP1

Top patents by PatentIndex Score

48 records

0196US6603172B1Semiconductor device and method of manufacturing the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2000·Granted Aug 5, 2003·104 cites·20 claims
0293US6436747B1Method of fabricating semiconductor deviceMATSUSHITA ELECTTRIC IND CO LT·Filed 2000·Granted Aug 20, 2002·109 cites·17 claims
0391US5972783AMethod for fabricating a semiconductor device having a nitrogen diffusion layerMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1997·Granted Oct 26, 1999·125 cites·25 claims
0490US6083785AMethod of manufacturing semiconductor device having resistor filmMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1997·Granted Jul 4, 2000·80 cites·10 claims
0588US5736421ASemiconductor device and associated fabrication methodMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1996·Granted Apr 7, 1998·78 cites·6 claims
0685US5698902ASemiconductor device having finely configured gate electrodesMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1995·Granted Dec 16, 1997·70 cites·13 claims
0783US5320974AMethod for making semiconductor transistor device by implanting punch through stoppersMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1993·Granted Jun 14, 1994·87 cites·7 claims
0881US6593198B2Semiconductor device and method for fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2001·Granted Jul 15, 2003·23 cites·14 claims
0980US6143626AMethod of manufacturing a semiconductor device using a trench isolation techniqueMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1999·Granted Nov 7, 2000·51 cites·9 claims
1079US6870230B2Semiconductor device utilizing dummy features to form uniform sidewall structuresMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2002·Granted Mar 22, 2005·27 cites·12 claims
1177US6806178B2Semiconductor device and method for fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2003·Granted Oct 19, 2004·16 cites·18 claims
1276US6518636B2Semiconductor MISFETMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2001·Granted Feb 11, 2003·17 cites·8 claims
1376US6232656B1Semiconductor interconnect formed over an insulation and having moisture resistant materialMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1999·Granted May 15, 2001·35 cites·17 claims
1475US7126174B2Semiconductor device and method of manufacturing the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2004·Granted Oct 24, 2006·13 cites·20 claims
1575US6069055AFabricating method for semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1997·Granted May 30, 2000·47 cites·7 claims
1675US5428244ASemiconductor device having a silicon rich dielectric layerMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1993·Granted Jun 27, 1995·36 cites·7 claims
1771US6281562B1Semiconductor device which reduces the minimum distance requirements between active areasMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1996·Granted Aug 28, 2001·28 cites·12 claims
1871US6034416ASemiconductor device and method for fabricating the sameMATSUSHITA ELECTIRC IND CO LTD·Filed 1998·Granted Mar 7, 2000·30 cites·48 claims
1969US5989992AMethod of making a semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1997·Granted Nov 23, 1999·26 cites·11 claims
2069US5158903AMethod for producing a field-effect type semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1990·Granted Oct 27, 1992·47 cites·3 claims
2168US5946563ASemiconductor device and method of manufacturing the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1997·Granted Aug 31, 1999·29 cites·13 claims
2267US5202277AMethod of fabricating a semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1992·Granted Apr 13, 1993·27 cites·25 claims
2366US7271414B2Semiconductor device and method for fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2006·Granted Sep 18, 2007·4 cites·7 claims
2466US6524904B1Method of fabricating semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2000·Granted Feb 25, 2003·13 cites·8 claims
2564US6586809B2Semiconductor device and method for fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2002·Granted Jul 1, 2003·7 cites·18 claims
2664US5677249ASemiconductor apparatus and production method for the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1996·Granted Oct 14, 1997·24 cites·6 claims
2762US5960300AMethod of manufacturing semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1995·Granted Sep 28, 1999·24 cites·6 claims
2861US6492672B1Semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2000·Granted Dec 10, 2002·7 cites·11 claims
2961US5879983ASemiconductor device and method for manufacturing the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1996·Granted Mar 9, 1999·16 cites·4 claims
3060US5296388AFabrication method for semiconductor devicesMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1991·Granted Mar 22, 1994·32 cites·11 claims
3160US5045493ASemiconductor device and method of manufacturing the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1990·Granted Sep 3, 1991·20 cites·10 claims
3257US6124160ASemiconductor device and method for manufacturing the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1998·Granted Sep 26, 2000·13 cites·4 claims
3355US6962853B2Semiconductor device and method for fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2003·Granted Nov 8, 2005·5 cites·6 claims
3454USRE41980ESemiconductor interconnect formed over an insulation and having moisture resistant materialPANASONIC CORP·Filed 2007·Granted Dec 7, 2010·0 cites·51 claims
3553USRE39932ESemiconductor interconnect formed over an insulation and having moisture resistant materialMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2003·Granted Dec 4, 2007·3 cites·32 claims
3653US6967409B2Semiconductor device and method of manufacturing the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2003·Granted Nov 22, 2005·3 cites·81 claims
3752US5254485AMethod for manufacturing bipolar semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1991·Granted Oct 19, 1993·14 cites·11 claims
3850US6570231B1Semiconductor device with varying width electrodeMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2000·Granted May 27, 2003·5 cites·5 claims
3949US6720226B2Semiconductor device and method for facticating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2003·Granted Apr 13, 2004·3 cites·7 claims
4049US6709950B2Semiconductor device and method of manufacturing the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2001·Granted Mar 23, 2004·2 cites·22 claims
4149US5686340AManufacturing method of CMOS transistorMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1996·Granted Nov 11, 1997·7 cites·1 claims
4249US2005156220A1Semiconductor device and method of manufacturing the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2005·Application pending·0 cites
4348US5447872AManufacturing method of CMOS transistor including heat treatments of gate electrodes and LDD regions at reducing temperaturesMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1994·Granted Sep 5, 1995·7 cites·2 claims
4443US5726071AManufacturing method of CMOS transistorMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1997·Granted Mar 10, 1998·5 cites·2 claims
4542US5409847AManufacturing method of CMOS transistor in which heat treatment at higher temperature is done prior to heat treatment at low temperatureMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1993·Granted Apr 25, 1995·5 cites·4 claims
4641US2006043496A1Semiconductor device and method for fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2005·Application pending·0 cites
4738US5618748AManufacturing method of CMOS transistor with no reduction of punch-through voltageMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1995·Granted Apr 8, 1997·3 cites·2 claims
4830US5756382AManufacturing method of CMOS transistorMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1997·Granted May 26, 1998·0 cites·2 claims

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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →