Inventor · disambiguated record
Chuang-Ke Yeh
Also filed as: YEH CHUANG-KE
12 granted patents·322 citations·filing 1998–2001
93Inventor score
Files withTAIWAN SEMICONDUCTOR MFG12
Top patents by PatentIndex Score
12 records- 0191US6312989B1Structure with protruding source in split-gate flashTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Nov 6, 2001·43 cites·20 claims
- 0290US6204126B1Method to fabricate a new structure with multi-self-aligned for split-gate flashTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Mar 20, 2001·56 cites·20 claims
- 0379US6538277B2Split-gate flash cellTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Mar 25, 2003·23 cites·5 claims
- 0479US6229176B1Split gate flash with step poly to improve program speedTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted May 8, 2001·37 cites·8 claims
- 0578US5879992AMethod of fabricating step poly to improve program speed in split gate flashTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Mar 9, 1999·38 cites·22 claims
- 0674US5970371AMethod of forming sharp beak of poly to improve erase speed in split-gate flash EEPROMTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Oct 19, 1999·31 cites·20 claims
- 0771US6479859B2Split gate flash memory with multiple self-alignmentsTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Nov 12, 2002·15 cites·9 claims
- 0871US6046086AMethod to improve the capacity of data retention and increase the coupling ratio of source to floating gate in split-gate flashTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Apr 4, 2000·35 cites·22 claims
- 0965US6534821B2Structure with protruding source in split-gate flashTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Mar 18, 2003·8 cites·10 claims
- 1063US6309928B1Split-gate flash cellTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Oct 30, 2001·25 cites·35 claims
- 1144US6171906B1Method of forming sharp beak of poly to improve erase speed in split gate flashTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Jan 9, 2001·7 cites·5 claims
- 1243US6326660B1Method to improve the capacity of data retention and increase the coupling ratio of source to floating gate in split-gate flashTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Dec 4, 2001·4 cites·5 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →