Inventor · disambiguated record
Tatsuo Nakato
Also filed as: NAKATO TATSUO
11 granted patents·609 citations·filing 1993–1997
93Inventor score
Top patents by PatentIndex Score
11 records- 0194US5792679AMethod for forming silicon-germanium/Si/silicon dioxide heterostructure using germanium implantSHARP MICROELECT TECH INC·Filed 1993·Granted Aug 11, 1998·235 cites·34 claims
- 0285US5436175AShallow SIMOX processing method using molecular ion implantationSHARP MICROELECT TECH INC·Filed 1994·Granted Jul 25, 1995·97 cites·6 claims
- 0383US5726459AGE-SI SOI MOS transistor and method of fabricating sameSHARP MICROELECT TECH INC·Filed 1994·Granted Mar 10, 1998·53 cites·33 claims
- 0478US5486424ASilylated photoresist layer and planarizing methodSHARP KK·Filed 1994·Granted Jan 23, 1996·28 cites·11 claims
- 0577US5395771AGraded implantation of oxygen and/or nitrogen constituents to define buried isolation region in semiconductor devicesSHARP KK·Filed 1994·Granted Mar 7, 1995·50 cites·28 claims
- 0673US5589407AMethod of treating silicon to obtain thin, buried insulating layerIMPLANTED MATERIAL TECHNOLOGY·Filed 1995·Granted Dec 31, 1996·54 cites·21 claims
- 0768US5756256ASilylated photo-resist layer and planarizing methodSHARP MICROELECT TECH INC·Filed 1997·Granted May 26, 1998·30 cites·1 claims
- 0867US5545512AMethod of forming a pattern of silylated planarizing photoresistSHARP MICROELECT TECH INC·Filed 1995·Granted Aug 13, 1996·24 cites·15 claims
- 0947US5278077APin-hole patch method for implanted dielectric layerSHARP MICROELECT TECH INC·Filed 1993·Granted Jan 11, 1994·14 cites·1 claims
- 1046US5608252ASemiconductor with implanted dielectric layer having patched pin-holesSHARP MICROELECT TECH INC·Filed 1994·Granted Mar 4, 1997·13 cites·34 claims
- 1143US5514897AGraded implantation of oxygen and/or nitrogen constituents to define buried isolation region in semiconductor devicesSHARP MICROELECT TECH INC·Filed 1994·Granted May 7, 1996·11 cites·13 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →