Inventor · disambiguated record
Yijie Zhao
Also filed as: ZHAO YIJIE
19 granted patents·1 pending application·53 citations·filing 2009–2025
92Inventor score
Top patents by PatentIndex Score
20 records- 0197US11194473B1Programming frequently read data to low latency portions of a solid-state storage arrayPURE STORAGE INC·Filed 2019·Granted Dec 7, 2021·24 cites·18 claims
- 0290US11487455B2Dynamic block allocation to optimize storage system performancePURE STORAGE INC·Filed 2020·Granted Nov 1, 2022·2 cites·20 claims
- 0383US8742481B2Apparatuses and methods comprising a channel region having different minority carrier lifetimesTESSARIOL PAOLO·Filed 2011·Granted Jun 3, 2014·7 cites·29 claims
- 0479US12236117B2Resiliency management in a storage systemPURE STORAGE INC·Filed 2023·Granted Feb 25, 2025·0 cites·19 claims
- 0579US9190472B2Apparatuses and methods comprising a channel region having different minority carrier lifetimesMICRON TECHNOLOGY INC·Filed 2014·Granted Nov 17, 2015·4 cites·18 claims
- 0678US8374028B2Sense operation in a memory deviceMICRON TECHNOLOGY INC·Filed 2011·Granted Feb 12, 2013·5 cites·22 claims
- 0777US2025208776A1Managing flash memory for performancePURE STORAGE INC·Filed 2025·Application pending·0 cites
- 0876US11789626B2Optimizing block allocation in a data storage systemPURE STORAGE INC·Filed 2022·Granted Oct 17, 2023·0 cites·20 claims
- 0974US10325661B2Methods of programming memoryMICRON TECHNOLOGY INC·Filed 2017·Granted Jun 18, 2019·2 cites·20 claims
- 1074US9251907B2Memory devices and methods of operating memory devices including applying a potential to a source and a select gate between the source and a string of memory cells while performing a program operation on a memory cell in the stringGODA AKIRA·Filed 2012·Granted Feb 2, 2016·3 cites·37 claims
- 1169US12135878B2Programming frequently read data to low latency portions of a solid-state storage arrayPURE STORAGE INC·Filed 2021·Granted Nov 5, 2024·0 cites·20 claims
- 1267US10438672B2Memory devices and apparatus configured to apply positive voltage levels to data lines for memory cells selected for and inhibited from programmingMICRON TECHNOLOGY INC·Filed 2018·Granted Oct 8, 2019·1 cites·6 claims
- 1363US8144516B2Dynamic pass voltage for sense operation in a memory deviceZHAO YIJIE·Filed 2009·Granted Mar 27, 2012·5 cites·29 claims
- 1455US10847233B2Memory devices and apparatus configured to apply positive voltage levels to data lines for memory cells selected for and inhibited from programmingMICRON TECHNOLOGY INC·Filed 2019·Granted Nov 24, 2020·0 cites·20 claims
- 1551US10049756B2Memory devices that apply a programming potential to a memory cell in a string coupled to a source and data line concurrently with biasing the data line to a greater potential than the sourceMICRON TECHNOLOGY INC·Filed 2017·Granted Aug 14, 2018·0 cites·20 claims
- 1649US9754671B2Programming methods and memoriesMICRON TECHNOLOGY INC·Filed 2016·Granted Sep 5, 2017·0 cites·20 claims
- 1749US9646702B2Operating memory devices to apply a programming potential to a memory cell in a string coupled to a source and data line concurrently with biasing the data line to a greater potential than the sourceMICRON TECHNOLOGY INC·Filed 2016·Granted May 9, 2017·0 cites·19 claims
- 1847US9455042B2Programming methods and memoriesMICRON TECHNOLOGY INC·Filed 2015·Granted Sep 27, 2016·0 cites·20 claims
- 1946US8780626B2Sense operation in a memory deviceMICRON TECHNOLOGY INC·Filed 2013·Granted Jul 15, 2014·0 cites·26 claims
- 2041US8982631B2Programming methods and memoriesZHAO YIJIE·Filed 2010·Granted Mar 17, 2015·0 cites·16 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →