Inventor · disambiguated record
Paul C. Jamison
Also filed as: JAMISON PAUL · JAMISON PAUL C · JAMISON PAUL CHARLES
68 granted patents·19 pending applications·901 citations·filing 1999–2024
99Inventor score
Top patents by PatentIndex Score
87 records- 0198US10002791B1Multi-layer work function metal gates with similar gate thickness to achieve multi-Vt for vFETSIBM·Filed 2017·Granted Jun 19, 2018·20 cites·10 claims
- 0298US9653537B1Controlling threshold voltage in nanosheet transistorsIBM·Filed 2016·Granted May 16, 2017·29 cites·20 claims
- 0398US9490255B1Complementary metal oxide semiconductor replacement gate high-k metal gate devices with work function adjustmentsIBM·Filed 2015·Granted Nov 8, 2016·25 cites·20 claims
- 0497US6921711B2Method for forming metal replacement gate of high performanceIBM·Filed 2003·Granted Jul 26, 2005·147 cites·25 claims
- 0596US11309383B1Quad-layer high-k for metal-insulator-metal capacitorsIBM·Filed 2020·Granted Apr 19, 2022·4 cites·25 claims
- 0696US6982230B2Deposition of hafnium oxide and/or zirconium oxide and fabrication of passivated electronic structuresIBM·Filed 2002·Granted Jan 3, 2006·112 cites·14 claims
- 0794US6511876B2High mobility FETS using A1203 as a gate oxideIBM·Filed 2001·Granted Jan 28, 2003·84 cites·38 claims
- 0892US9006094B2Stratified gate dielectric stack for gate dielectric leakage reductionJAGANNATHAN HEMANTH·Filed 2012·Granted Apr 14, 2015·10 cites·15 claims
- 0992US6252295B1Adhesion of silicon carbide filmsIBM·Filed 2000·Granted Jun 26, 2001·67 cites·14 claims
- 1091US11251285B2Approach to control over-etching of bottom spacers in vertical fin field effect transistor devicesIBM·Filed 2019·Granted Feb 15, 2022·4 cites·20 claims
- 1191US10680083B2Oxide isolated fin-type field-effect transistorsIBM·Filed 2018·Granted Jun 9, 2020·6 cites·10 claims
- 1291US8304836B2Structure and method to obtain EOT scaled dielectric stacksJAGANNATHAN HEMANTH·Filed 2009·Granted Nov 6, 2012·10 cites·18 claims
- 1391US7655994B2Low threshold voltage semiconductor device with dual threshold voltage control meansIBM·Filed 2005·Granted Feb 2, 2010·21 cites·19 claims
- 1490US7242055B2Nitrogen-containing field effect transistor gate stack containing a threshold voltage control layer formed via deposition of a metal oxideIBM·Filed 2004·Granted Jul 10, 2007·51 cites·34 claims
- 1588US7858500B2Low threshold voltage semiconductor device with dual threshold voltage control meansIBM·Filed 2008·Granted Dec 28, 2010·12 cites·20 claims
- 1687US6500772B2Methods and materials for depositing films on semiconductor substratesIBM·Filed 2001·Granted Dec 31, 2002·40 cites·8 claims
- 1786US10304746B2Complementary metal oxide semiconductor replacement gate high-K metal gate devices with work function adjustmentsIBM·Filed 2016·Granted May 28, 2019·3 cites·10 claims
- 1886US10134642B2Semiconductor device and method of forming the semiconductor deviceIBM·Filed 2016·Granted Nov 20, 2018·4 cites·15 claims
- 1984US10020359B1Leakage current reduction in stacked metal-insulator-metal capacitorsIBM·Filed 2017·Granted Jul 10, 2018·2 cites·20 claims
- 2084US6573197B2Thermally stable poly-Si/high dielectric constant material interfacesIBM·Filed 2001·Granted Jun 3, 2003·32 cites·39 claims
- 2183US9818616B1Controlling threshold voltage in nanosheet transistorsIBM·Filed 2017·Granted Nov 14, 2017·2 cites·14 claims
- 2283US9627214B2Stratified gate dielectric stack for gate dielectric leakage reductionIBM·Filed 2016·Granted Apr 18, 2017·2 cites·19 claims
- 2383US8802513B2Fin field effect transistors having a nitride containing spacer to reduce lateral growth of epitaxially deposited semiconductor materialsIBM·Filed 2012·Granted Aug 12, 2014·5 cites·14 claims
- 2483US7169674B2Complementary metal oxide semiconductor (CMOS) gate stack with high dielectric constant gate dielectric and integrated diffusion barrierIBM·Filed 2005·Granted Jan 30, 2007·9 cites·20 claims
- 2581US11094801B2Oxide isolated fin-type field-effect transistorsIBM·Filed 2020·Granted Aug 17, 2021·1 cites·16 claims
- 2681US9035391B2Fin field effect transistors having a nitride containing spacer to reduce lateral growth of epitaxially deposited semiconductor materialsIBM·Filed 2014·Granted May 19, 2015·4 cites·20 claims
- 2780US9385207B2Stratified gate dielectric stack for gate dielectric leakage reductionIBM·Filed 2015·Granted Jul 5, 2016·2 cites·17 claims
- 2880US6784485B1Diffusion barrier layer and semiconductor device containing sameIBM·Filed 2000·Granted Aug 31, 2004·25 cites·15 claims
- 2979US10892339B2Gate first technique in vertical transport FET using doped silicon gates with silicideIBM·Filed 2019·Granted Jan 12, 2021·2 cites·20 claims
- 3079US10084055B2Uniform threshold voltage for nanosheet devicesIBM·Filed 2017·Granted Sep 25, 2018·2 cites·20 claims
- 3179US6893979B2Method for improved plasma nitridation of ultra thin gate dielectricsIBM·Filed 2001·Granted May 17, 2005·21 cites·7 claims
- 3278US9059314B2Structure and method to obtain EOT scaled dielectric stacksJAGANNATHAN HEMANTH·Filed 2012·Granted Jun 16, 2015·2 cites·13 claims
- 3378US6974779B2Interfacial oxidation process for high-k gate dielectric process integrationIBM·Filed 2003·Granted Dec 13, 2005·20 cites·33 claims
- 3477US10580881B2Approach to control over-etching of bottom spacers in vertical fin field effect transistor devicesIBM·Filed 2018·Granted Mar 3, 2020·1 cites·16 claims
- 3577US10170316B2Controlling threshold voltage in nanosheet transistorsIBM·Filed 2017·Granted Jan 1, 2019·1 cites·20 claims
- 3677US6891231B2Complementary metal oxide semiconductor (CMOS) gate stack with high dielectric constant gate dielectric and integrated diffusion barrierIBM·Filed 2001·Granted May 10, 2005·19 cites·18 claims
- 3777US6345399B1Hard mask process to prevent surface roughness for selective dielectric etchingIBM·Filed 2000·Granted Feb 12, 2002·20 cites·17 claims
- 3876US10833148B2Leakage current reduction in stacked metal-insulator-metal capacitorsIBM·Filed 2017·Granted Nov 10, 2020·1 cites·11 claims
- 3975US10297671B2Uniform threshold voltage for nanosheet devicesIBM·Filed 2018·Granted May 21, 2019·1 cites·20 claims
- 4075US7115959B2Method of forming metal/high-k gate stacks with high mobilityIBM·Filed 2004·Granted Oct 3, 2006·17 cites·26 claims
- 4174US10978551B2Surface area enhancement for stacked metal-insulator-metal (MIM) capacitorIBM·Filed 2017·Granted Apr 13, 2021·1 cites·15 claims
- 4274US6355567B1Retrograde openings in thin filmsIBM·Filed 1999·Granted Mar 12, 2002·42 cites·10 claims
- 4372US10991881B2Method for controlling the forming voltage in resistive random access memory devicesTOKYO ELECTRON LTD·Filed 2019·Granted Apr 27, 2021·2 cites·17 claims
- 4471US11700778B2Method for controlling the forming voltage in resistive random access memory devicesTOKYO ELECTRON LTD·Filed 2021·Granted Jul 11, 2023·0 cites·20 claims
- 4570US10930566B2Complementary metal oxide semiconductor replacement gate high-k metal gate devices with work function adjustmentsIBM·Filed 2020·Granted Feb 23, 2021·0 cites·20 claims
- 4669US11594596B2Back-end-of-line compatible metal-insulator-metal on-chip decoupling capacitorIBM·Filed 2021·Granted Feb 28, 2023·0 cites·10 claims
- 4764US10573565B2Complementary metal oxide semiconductor replacement gate high-k metal gate devices with work function adjustmentsIBM·Filed 2019·Granted Feb 25, 2020·0 cites·18 claims
- 4863US10381433B2Leakage current reduction in stacked metal-insulator-metal capacitorsIBM·Filed 2018·Granted Aug 13, 2019·0 cites·20 claims
- 4962US10396146B2Leakage current reduction in stacked metal-insulator-metal capacitorsIBM·Filed 2017·Granted Aug 27, 2019·0 cites·13 claims
- 5061US11038013B2Back-end-of-line compatible metal-insulator-metal on-chip decoupling capacitorIBM·Filed 2019·Granted Jun 15, 2021·0 cites·9 claims
Showing the top 50 of 87 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →