Inventor · disambiguated record
Bruno Daudin
Also filed as: DAUDIN BRUNO · DAUDIN BRUNO-JULES
14 granted patents·4 pending applications·45 citations·filing 2004–2022
88Inventor score
Top patents by PatentIndex Score
18 records- 0190US11189752B2Nanowire structure and method for producing such a structureCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2018·Granted Nov 30, 2021·3 cites·21 claims
- 0288US8044414B2Semiconductor layered structure and its method of formation, and light emitting deviceNGK INSULATORS LTD·Filed 2008·Granted Oct 25, 2011·23 cites·16 claims
- 0382US7172956B2Substrate for semiconductor light-emitting element, semiconductor light-emitting element and semiconductor light-emitting element fabrication methodCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2005·Granted Feb 6, 2007·8 cites·4 claims
- 0480US10403787B2Optoelectronic device comprising three-dimensional semiconductor structures in an axial configurationCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2016·Granted Sep 3, 2019·3 cites·13 claims
- 0579US9559256B2Method for manufacturing a semiconductor structure and semiconductor component comprising such a semiconductor structureCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2014·Granted Jan 31, 2017·4 cites·12 claims
- 0657US12368140B2Axial-type optoelectronic device with light-emitting diodes and method for manufacturing sameAledia·Filed 2020·Granted Jul 22, 2025·0 cites·17 claims
- 0756US12328976B2Light-emitting diode comprising a hybrid structure formed of layers and nanowireCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2021·Granted Jun 10, 2025·0 cites·14 claims
- 0856US12199076B2Method for manufacturing an optoelectronic device with axial-type electroluminescent diodesCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2020·Granted Jan 14, 2025·0 cites·12 claims
- 0956US11162188B2Method for producing a crystalline layer in a III-N compound by van der Waals epitaxy from grapheneCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2018·Granted Nov 2, 2021·0 cites·10 claims
- 1055US9093608B2Method of manufacturing a light emitting diode comprising a layer of AlGaN heterogeneousCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2013·Granted Jul 28, 2015·0 cites·7 claims
- 1155US2024313150A1Process for producing light-emitting diodesCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2022·Application pending·0 cites
- 1254US6943366B2Substrate for semiconductor light-emitting element, semiconductor light-emitting element and semiconductor light-emitting element fabrication methodCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2004·Granted Sep 13, 2005·4 cites·13 claims
- 1351US12206040B2Method for homogenising the cross-section of nanowires for light-emitting diodesAledia·Filed 2020·Granted Jan 21, 2025·0 cites·12 claims
- 1446US2024304758A1Light-emitting diode with emissive regions including rare earth ionsCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2022·Application pending·0 cites
- 1542US2023231073A1LIGHT-EMITTING DIODE COMPRISING A SEMICONDUCTOR BASED ON AlN P-DOPED WITH MAGNESIUM ATOMS AND A LAYER OF DOPED DIAMONDCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2020·Application pending·0 cites
- 1641US8367529B2Method for preparing a semiconductorCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2007·Granted Feb 5, 2013·0 cites·15 claims
- 1740US2023197885A1Method for manufacturing a device for emitting radiationCENTRE NAT RECH SCIENT·Filed 2021·Application pending·0 cites
- 1836US7354619B2Protection of the SiC surface by a GaN layerCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2004·Granted Apr 8, 2008·0 cites·12 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →