Inventor · disambiguated record
Horatio S. Wildman
Also filed as: WILDMAN HORATIO S · WILDMAN HORATIO SEYMOUR
19 granted patents·6 pending applications·698 citations·filing 1993–2008
95Inventor score
Top patents by PatentIndex Score
25 records- 0198US7474107B2Buried short location determination using voltage contrast inspectionIBM·Filed 2006·Granted Jan 6, 2009·105 cites·5 claims
- 0297US7772866B2Structure and method of mapping signal intensity to surface voltage for integrated circuit inspectionIBM·Filed 2007·Granted Aug 10, 2010·85 cites·20 claims
- 0396US6323128B1Method for forming Co-W-P-Au filmsIBM·Filed 1999·Granted Nov 27, 2001·292 cites·20 claims
- 0490US6646345B2Method for forming Co-W-P-Au filmsIBM·Filed 2001·Granted Nov 11, 2003·45 cites·5 claims
- 0586US8101518B2Method and process for forming a self-aligned silicide contactCABRAL JR CYRIL·Filed 2008·Granted Jan 24, 2012·12 cites·27 claims
- 0684US6388327B1Capping layer for improved silicide formation in narrow semiconductor structuresIBM·Filed 2001·Granted May 14, 2002·31 cites·6 claims
- 0780US6784485B1Diffusion barrier layer and semiconductor device containing sameIBM·Filed 2000·Granted Aug 31, 2004·25 cites·15 claims
- 0870US7544610B2Method and process for forming a self-aligned silicide contactIBM·Filed 2004·Granted Jun 9, 2009·14 cites·34 claims
- 0967US6417567B1Flat interface for a metal-silicon contract barrier filmIBM·Filed 2000·Granted Jul 9, 2002·8 cites·20 claims
- 1067US6339007B1Capacitor stack structure and method of fabricating descriptionIBM·Filed 2000·Granted Jan 15, 2002·15 cites·15 claims
- 1165US6022801AMethod for forming an atomically flat interface for a highly disordered metal-silicon barrier filmIBM·Filed 1998·Granted Feb 8, 2000·23 cites·18 claims
- 1258US6726996B2Laminated diffusion barrierIBM·Filed 2001·Granted Apr 27, 2004·8 cites·19 claims
- 1352US6509265B1Process for manufacturing a contact barrierIBM·Filed 2000·Granted Jan 21, 2003·4 cites·9 claims
- 1447US5956573AUse of argon sputtering to modify surface properties by thin film depositionIBM·Filed 1997·Granted Sep 21, 1999·11 cites·19 claims
- 1547US5401677AMethod of metal silicide formation in integrated circuit devicesIBM·Filed 1993·Granted Mar 28, 1995·12 cites·6 claims
- 1644US6124639AFlat interface for a metal-silicon contact barrier filmIBM·Filed 1999·Granted Sep 26, 2000·7 cites·20 claims
- 1743US2007210448A1Electroless cobalt-containing liner for middle-of-the-line (mol) applicationsIBM·Filed 2006·Application pending·0 cites
- 1839US2007123042A1Methods to form heterogeneous silicides/germanides in cmos technologyIBM·Filed 2005·Application pending·0 cites
- 1937US2004137745A1Method and apparatus for removing backside edge polymerIBM·Filed 2003·Application pending·0 cites
- 2037US2005221612A1A low thermal budget (mol) liner, a semiconductor device comprising said liner and method of forming said semiconductor deviceADVANCED MICRO DEVICES INC·Filed 2004·Application pending·0 cites
- 2137US2004077140A1Apparatus and method for forming uniformly thick anodized films on large substratesFiled 2002·Application pending·0 cites
- 2236US6413866B1Method of forming a solute-enriched layer in a substrate surface and article formed therebyIBM·Filed 2000·Granted Jul 2, 2002·0 cites·16 claims
- 2335US2002180046A1Method for producing a flat interface for a metal-silicon contact barrier filmIBM·Filed 2001·Application pending·0 cites
- 2430US6180521B1Process for manufacturing a contact barrierIBM·Filed 1999·Granted Jan 30, 2001·0 cites·11 claims
- 2529US6068923AUse of argon sputtering to modify surface properties by thin film depositionIBM·Filed 1999·Granted May 30, 2000·1 cites·11 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →