Inventor · disambiguated record
David Kurt Gaskill
Also filed as: GASKILL DAVID K · GASKILL DAVID KURT
20 granted patents·3 pending applications·28 citations·filing 1989–2023
91Inventor score
Files withUS GOV SEC NAVY5GARCES NELSON3MYERS WARD RACHAEL L3MASSACHUSETTS INST TECHNOLOGY2UNIV MARYLAND2
Top patents by PatentIndex Score
23 records- 0183US10976297B2Graphene-based PPB level sulfur detector in fuelsUS GOV SEC NAVY·Filed 2018·Granted Apr 13, 2021·2 cites·12 claims
- 0276US10262871B1Formation of field-tunable silicon carbide defect qubits with optically transparent electrodes and silicon oxide surface passivationUS NAVY·Filed 2018·Granted Apr 16, 2019·3 cites·15 claims
- 0376US10084102B2Plasmon-enhanced terahertz graphene-based photodetector and method of fabricationUNIV MARYLAND·Filed 2016·Granted Sep 25, 2018·4 cites·20 claims
- 0474US8518491B2Preparation of epitaxial graphene surfaces for atomic layer deposition of dielectricsGARCES NELSON·Filed 2011·Granted Aug 27, 2013·3 cites·12 claims
- 0573US12469699B2Systems and methods for growth of silicon carbide over a layer comprising graphene and/or hexagonal boron nitride and related articlesMASSACHUSETTS INST TECHNOLOGY·Filed 2023·Granted Nov 11, 2025·0 cites·16 claims
- 0672US11029213B2Epitaxial graphene quantum dots for high-performance terahertz bolometersGASKILL KURT·Filed 2016·Granted Jun 8, 2021·4 cites·10 claims
- 0768US11789004B2Graphene-based PPB level sulfur detectorUS GOV SEC NAVY·Filed 2021·Granted Oct 17, 2023·0 cites·13 claims
- 0865US10821709B2Multilayer graphene structures with enhanced mechanical properties resulting from deterministic control of interlayer twist angles and chemical functionalizationUNIV MASSACHUSETTS·Filed 2020·Granted Nov 3, 2020·0 cites·9 claims
- 0965US9629251B2Sub-micron laser patterning of graphene and 2D materialsUS NAVY·Filed 2014·Granted Apr 18, 2017·1 cites·22 claims
- 1064US9028919B2Epitaxial graphene surface preparation for atomic layer deposition of dielectricsGARCES NELSON·Filed 2014·Granted May 12, 2015·1 cites·6 claims
- 1164US8652255B2Method of producing epitaxial layers with low basal plane dislocation concentrationsSTAHLBUSH ROBERT E·Filed 2008·Granted Feb 18, 2014·4 cites·17 claims
- 1261US10256090B2Reduction of basal plane dislocations in epitaxial SiC using an in-situ etch processMYERS WARD RACHAEL L·Filed 2014·Granted Apr 9, 2019·1 cites·11 claims
- 1361US10256094B2Reduction of basal plane dislocations in epitaxial SiC using an in-situ etch processMYERS WARD RACHAEL L·Filed 2014·Granted Apr 9, 2019·1 cites·12 claims
- 1460US10928351B2Plasma modified epitaxial fabricated graphene on SiC for electrochemical trace detection of explosivesUS GOV SEC NAVY·Filed 2018·Granted Feb 23, 2021·0 cites·8 claims
- 1559US9464366B2Reduction of basal plane dislocations in epitaxial SiCMYERS-WARD RACHAEL L·Filed 2010·Granted Oct 11, 2016·1 cites·18 claims
- 1652US8920877B2Preparation of epitaxial graphene surfaces for atomic layer deposition of dielectricsGARCES NELSON·Filed 2013·Granted Dec 30, 2014·0 cites·8 claims
- 1751US2013027778A1Broadband Absorptive Neutral Density Optical FilterUS GOV SEC NAVY·Filed 2012·Application pending·0 cites
- 1850US2021125826A1Systems and methods for growth of silicon carbide over a layer comprising graphene and/or hexagonal boron nitride and related articlesMASSACHUSETTS INST TECHNOLOGY·Filed 2019·Application pending·0 cites
- 1950US2016041318A1Broadband Absorptive Neutral Density Optical FilterCURRIE MARC·Filed 2015·Application pending·0 cites
- 2042US11572281B2Method for graphene functionalization that preserves characteristic electronic properties such as the quantum hall effect and enables nanoparticles depositionUS GOV SEC NAVY·Filed 2018·Granted Feb 7, 2023·0 cites·12 claims
- 2139US8603243B2Tracking carbon to silicon ratio in situ during silicon carbide growthVANMIL BRENDA L·Filed 2008·Granted Dec 10, 2013·0 cites·8 claims
- 2235US10672933B2Hybrid metal-graphene terahertz optoelectronic system with tunable plasmonic resonance and method of fabricationUNIV MARYLAND·Filed 2016·Granted Jun 2, 2020·0 cites·20 claims
- 2328US5314866AFormation of superconducting Bi-Sr-Ca-Cu-O films by organometallic chemical vapor depositionUS ARMY·Filed 1989·Granted May 24, 1994·3 cites·2 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →