Inventor · disambiguated record
John A. Ott
Also filed as: OTT JOHN · OTT JOHN A · OTT JOHN ALBRECHT
77 granted patents·12 pending applications·1,717 citations·filing 1997–2020
99Inventor score
Top patents by PatentIndex Score
89 records- 0199US6350993B1High speed composite p-channel Si/SiGe heterostructure for field effect devicesIBM·Filed 1999·Granted Feb 26, 2002·404 cites·41 claims
- 0298US6524935B1Preparation of strained Si/SiGe on insulator by hydrogen induced layer transfer techniqueIBM·Filed 2000·Granted Feb 25, 2003·250 cites·31 claims
- 0397US9739728B1Automatic defect detection and classification for high throughput electron channeling contrast imagingIBM·Filed 2016·Granted Aug 22, 2017·16 cites·19 claims
- 0497US6251751B1Bulk and strained silicon on insulator using local selective oxidationIBM·Filed 1999·Granted Jun 26, 2001·239 cites·20 claims
- 0597US5963817ABulk and strained silicon on insulator using local selective oxidationIBM·Filed 1997·Granted Oct 5, 1999·251 cites·24 claims
- 0696US9608160B1Polarization free gallium nitride-based photonic devices on nanopatterned siliconIBM·Filed 2016·Granted Mar 28, 2017·19 cites·17 claims
- 0795US9496263B1Stacked strained and strain-relaxed hexagonal nanowiresIBM·Filed 2015·Granted Nov 15, 2016·9 cites·16 claims
- 0895US9406529B1Formation of FinFET junctionIBM·Filed 2015·Granted Aug 2, 2016·10 cites·20 claims
- 0995US9306107B2Buffer layer for high performing and low light degraded solar cellsIBM·Filed 2013·Granted Apr 5, 2016·10 cites·9 claims
- 1095US9000594B2Use of graphene to limit copper surface oxidation, diffusion and electromigration in interconnect structuresIBM·Filed 2013·Granted Apr 7, 2015·16 cites·13 claims
- 1194US8610278B1Use of graphene to limit copper surface oxidation, diffusion and electromigration in interconnect structuresOTT JOHN A·Filed 2012·Granted Dec 17, 2013·22 cites·16 claims
- 1294US6475072B1Method of wafer smoothing for bonding using chemo-mechanical polishing (CMP)IBM·Filed 2000·Granted Nov 5, 2002·86 cites·16 claims
- 1393US9761661B2Stacked strained and strain-relaxed hexagonal nanowiresIBM·Filed 2016·Granted Sep 12, 2017·6 cites·6 claims
- 1493US9741532B1Multi-beam electron microscope for electron channeling contrast imaging of semiconductor materialIBM·Filed 2016·Granted Aug 22, 2017·10 cites·20 claims
- 1593US9472450B2Graphene cap for copper interconnect structuresBONILLA GRISELDA·Filed 2012·Granted Oct 18, 2016·13 cites·5 claims
- 1693US8647978B1Use of graphene to limit copper surface oxidation, diffusion and electromigration in interconnect structuresOTT JOHN A·Filed 2012·Granted Feb 11, 2014·17 cites·20 claims
- 1793US7999251B2Nanowire MOSFET with doped epitaxial contacts for source and drainIBM·Filed 2006·Granted Aug 16, 2011·22 cites·15 claims
- 1892US9680018B2Method of forming high-germanium content silicon germanium alloy fins on insulatorIBM·Filed 2015·Granted Jun 13, 2017·7 cites·12 claims
- 1991US9812530B2High germanium content silicon germanium finsIBM·Filed 2016·Granted Nov 7, 2017·6 cites·15 claims
- 2091US9530643B2Selective epitaxy using epitaxy-prevention layersIBM·Filed 2015·Granted Dec 27, 2016·5 cites·20 claims
- 2191US8895433B2Method of forming a graphene cap for copper interconnect structuresSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Nov 25, 2014·9 cites·17 claims
- 2291US6805962B2Method of creating high-quality relaxed SiGe-on-insulator for strained Si CMOS applicationsIBM·Filed 2002·Granted Oct 19, 2004·52 cites·22 claims
- 2390US9324843B2High germanium content silicon germanium finsIBM·Filed 2014·Granted Apr 26, 2016·8 cites·15 claims
- 2490US8623761B2Method of forming a graphene cap for copper interconnect structuresBONILLA GRISELDA·Filed 2012·Granted Jan 7, 2014·9 cites·10 claims
- 2589US7705345B2High performance strained silicon FinFETs device and method for forming sameIBM·Filed 2004·Granted Apr 27, 2010·52 cites·18 claims
- 2689US6858502B2High speed composite p-channel Si/SiGe heterostructure for field effect devicesIBM·Filed 2001·Granted Feb 22, 2005·39 cites·30 claims
- 2788US9553153B1Post growth defect reduction for heteroepitaxial materialsIBM·Filed 2015·Granted Jan 24, 2017·4 cites·15 claims
- 2888US8530337B1Method of large-area circuit layout recognitionBEDELL STEPHEN W·Filed 2012·Granted Sep 10, 2013·6 cites·16 claims
- 2987US9058990B1Controlled spalling of group III nitrides containing an embedded spall releasing planeIBM·Filed 2013·Granted Jun 16, 2015·8 cites·19 claims
- 3086US7785939B2Planar substrate with selected semiconductor crystal orientations formed by localized amorphization and recrystallization of stacked template layersIBM·Filed 2006·Granted Aug 31, 2010·9 cites·21 claims
- 3185US7521376B2Method of forming a semiconductor structure using a non-oxygen chalcogen passivation treatmentIBM·Filed 2005·Granted Apr 21, 2009·10 cites·9 claims
- 3285US7285473B2Method for fabricating low-defect-density changed orientation SiIBM·Filed 2005·Granted Oct 23, 2007·11 cites·9 claims
- 3385US6750119B2Epitaxial and polycrystalline growth of Si1-x-yGexCy and Si1-yCy alloy layers on Si by UHV-CVDIBM·Filed 2001·Granted Jun 15, 2004·22 cites·13 claims
- 3484US10902912B2Electrochemical switching device with protective encapsulationIBM·Filed 2019·Granted Jan 26, 2021·2 cites·20 claims
- 3584US9859091B1Automatic alignment for high throughput electron channeling contrast imagingIBM·Filed 2016·Granted Jan 2, 2018·2 cites·20 claims
- 3683US10460937B2Post growth heteroepitaxial layer separation for defect reduction in heteroepitaxial filmsIBM·Filed 2017·Granted Oct 29, 2019·2 cites·10 claims
- 3782US9947533B2Selective epitaxy using epitaxy-prevention layersIBM·Filed 2016·Granted Apr 17, 2018·2 cites·17 claims
- 3881US10833311B2Method of making an anode structure containing a porous regionIBM·Filed 2018·Granted Nov 10, 2020·1 cites·22 claims
- 3980US7183576B2Epitaxial and polycrystalline growth of Si1-x-yGexCy and Si1-yCy alloy layers on Si by UHV-CVDIBM·Filed 2004·Granted Feb 27, 2007·14 cites·12 claims
- 4078US8138061B2Quasi-hydrophobic Si-Si wafer bonding using hydrophilic Si surfaces and dissolution of interfacial bonding oxideDE SOUZA JOEL P·Filed 2005·Granted Mar 20, 2012·6 cites·9 claims
- 4177US8236636B2Hybrid orientation semiconductor structure with reduced boundary defects and method of forming sameYIN HAIZHOU·Filed 2010·Granted Aug 7, 2012·3 cites·20 claims
- 4272US8476617B2Graphene-containing semiconductor structures and devices on a silicon carbide substrate having a defined miscut angleDIMITRAKOPOULOS CHRISTOS D·Filed 2011·Granted Jul 2, 2013·3 cites·16 claims
- 4370US9984941B2Non-destructive, wafer scale method to evaluate defect density in heterogeneous epitaxial layersIBM·Filed 2016·Granted May 29, 2018·1 cites·20 claims
- 4470US8153494B2Nanowire MOSFET with doped epitaxial contacts for source and drainCHU JACK O·Filed 2009·Granted Apr 10, 2012·3 cites·17 claims
- 4570US7405422B2Epitaxial and polycrystalline growth of Si1-x-yGexCy and Si1-yCy alloy layers on Si by UHV-CVDIBM·Filed 2006·Granted Jul 29, 2008·2 cites·1 claims
- 4669US8691608B2Semiconductor devices having nanochannels confined by nanometer-spaced electrodesIBM·Filed 2013·Granted Apr 8, 2014·2 cites·20 claims
- 4768US9368415B1Non-destructive, wafer scale method to evaluate defect density in heterogeneous epitaxial layersIBM·Filed 2015·Granted Jun 14, 2016·1 cites·20 claims
- 4868US8558326B2Semiconductor devices having nanochannels confined by nanometer-spaced electrodesHARRER STEFAN·Filed 2012·Granted Oct 15, 2013·2 cites·19 claims
- 4968US2014217408A1Buffer layer for high performing and low light degraded solar cellsIBM·Filed 2013·Application pending·0 cites
- 5067US9574287B2Gallium nitride material and device deposition on graphene terminated wafer and method of forming the sameGLOBALFOUNDRIES INC·Filed 2013·Granted Feb 21, 2017·1 cites·20 claims
Showing the top 50 of 89 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →