Inventor · disambiguated record
Luqiao Liu
Also filed as: LIU LUQIAO
14 granted patents·160 citations·filing 2012–2023
92Inventor score
Top patents by PatentIndex Score
14 records- 0197US9230626B2Electrically gated three-terminal circuits and devices based on spin hall torque effects in magnetic nanostructures apparatus, methods and applicationsUNIV CORNELL·Filed 2013·Granted Jan 5, 2016·60 cites·41 claims
- 0296US8889433B2Spin hall effect assisted spin transfer torque magnetic random access memoryIBM·Filed 2013·Granted Nov 18, 2014·16 cites·8 claims
- 0395US8896041B2Spin hall effect assisted spin transfer torque magnetic random access memoryIBM·Filed 2013·Granted Nov 25, 2014·13 cites·9 claims
- 0493US9269415B1Utilization of the anomalous hall effect or polarized spin hall effect for MRAM applicationsIBM·Filed 2014·Granted Feb 23, 2016·19 cites·20 claims
- 0593US9105832B2Spin hall effect magnetic apparatus, method and applicationsBUHRMAN ROBERT A·Filed 2012·Granted Aug 11, 2015·25 cites·31 claims
- 0689US9502087B2Electrically gated three-terminal circuits and devices based on spin hall torque effects in magnetic nanostructures apparatus, methods and applicationsUNIV CORNELL·Filed 2015·Granted Nov 22, 2016·9 cites·5 claims
- 0785US9576631B2Spin hall effect magnetic apparatus, method and applicationsUNIV CORNELL·Filed 2015·Granted Feb 21, 2017·7 cites·17 claims
- 0883US9799823B1High temperature endurable MTJ stackIBM·Filed 2016·Granted Oct 24, 2017·4 cites·10 claims
- 0979US9947382B2Electrically gated three-terminal circuits and devices based on spin hall torque effects in magnetic nanostructures apparatus, methods and applicationsUNIV CORNELL·Filed 2016·Granted Apr 17, 2018·4 cites·21 claims
- 1070US12126303B2Spin torque oscillator maserMASSACHUSETTS INST TECHNOLOGY·Filed 2023·Granted Oct 22, 2024·0 cites·18 claims
- 1170US9647204B2Spin torque MRAM based on Co, Ir synthetic antiferromagnetic multilayerIBM·Filed 2014·Granted May 9, 2017·3 cites·15 claims
- 1251US9715917B2Spin torque MRAM based on Co, Ir synthetic antiferromagnetic multilayerIBM·Filed 2016·Granted Jul 25, 2017·0 cites·20 claims
- 1344US11164615B2Spin hall write select for magneto-resistive random access memoryIBM·Filed 2018·Granted Nov 2, 2021·0 cites·5 claims
- 1443US9947383B1Spin hall write select for magneto-resistive random access memoryIBM·Filed 2017·Granted Apr 17, 2018·0 cites·19 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →