Inventor · disambiguated record
Hong-Mao Lee
Also filed as: LEE HONG-MAO
26 granted patents·13 pending applications·37 citations·filing 2013–2025
94Inventor score
Top patents by PatentIndex Score
39 records- 0192US10535748B2Method of forming a contact with a silicide regionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jan 14, 2020·6 cites·20 claims
- 0290US9287170B2Contact structure and formation thereofTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Mar 15, 2016·8 cites·20 claims
- 0389US10157995B2Integrating junction formation of transistors with contact formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Dec 18, 2018·9 cites·20 claims
- 0485US2025287628A1Contact with a Silicide RegionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0583US12211747B2Method of forming contact metalTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jan 28, 2025·0 cites·20 claims
- 0682US8927418B1Systems and methods for reducing contact resistivity of semiconductor devicesTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Jan 6, 2015·5 cites·20 claims
- 0781US9711402B1Method of forming contact metalTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jul 18, 2017·2 cites·21 claims
- 0879US12328890B2Contact with a silicide regionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 10, 2025·0 cites·20 claims
- 0979US2025351442A1Selective silicide for stacked multi-gate deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1079US2025167047A1Method of Forming Contact MetalTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1177US11791208B2Method of forming contact metalTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 17, 2023·0 cites·20 claims
- 1277US10504834B2Contact structure and the method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 10, 2019·2 cites·20 claims
- 1377US2024332076A1Conductive feature formation and structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1476US9624576B2Systems and methods for gap filling improvementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Apr 18, 2017·3 cites·19 claims
- 1576US2025359183A1Semiconductor device and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1674US10418279B2Method of forming contact metalTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Sep 17, 2019·1 cites·20 claims
- 1773US11031286B2Conductive feature formation and structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jun 8, 2021·1 cites·20 claims
- 1873US2025285962A1Semiconductor device and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1970US12501657B2Selective silicide for stacked multi-gate deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 16, 2025·0 cites·20 claims
- 2070US11411094B2Contact with a silicide regionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 9, 2022·0 cites·20 claims
- 2169US12046510B2Conductive feature formation and structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jul 23, 2024·0 cites·20 claims
- 2268US12432977B2Semiconductor device and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 30, 2025·0 cites·20 claims
- 2368US12272621B2Buried conductive structure in semiconductor substrateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 8, 2025·0 cites·20 claims
- 2467US11444028B2Contact structure and formation thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Sep 13, 2022·0 cites·20 claims
- 2567US2025226291A1Buried conductive structure in semiconductor substrateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2664US12327788B2Gate to source drain interconnectsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 10, 2025·0 cites·20 claims
- 2764US11232985B2Method of forming contact metalTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jan 25, 2022·0 cites·20 claims
- 2860US11195791B2Method for forming semiconductor contact structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 7, 2021·0 cites·20 claims
- 2959US10510664B2Contact structure and formation thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 17, 2019·0 cites·20 claims
- 3057US9735107B2Contact structure and formation thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Aug 15, 2017·0 cites·20 claims
- 3155US12439625B2Semiconductor device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 7, 2025·0 cites·20 claims
- 3255US2024405023A1Semiconductor devices and methods of fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 3354US10283359B2Systems and methods for gap filling improvementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted May 7, 2019·0 cites·20 claims
- 3454US2024379758A1Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 3554US2022375863A1Semiconductor arrangement and method for makingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 3654US2024379759A1Semiconductor device and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 3751US2023402278A1Semiconductor devices and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 3851US2023402366A1Semiconductor device including metal surrounding via contact and method of forming the semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 3948US11482495B2Semiconductor arrangement and method for makingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Oct 25, 2022·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →