Inventor · disambiguated record
Karthick Murukesan
Also filed as: MURUKESAN KARTHICK
11 granted patents·21 citations·filing 2015–2022
84Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD11
Top patents by PatentIndex Score
11 records- 0191US10535730B2High voltage metal-oxide-semiconductor (HVMOS) device integrated with a high voltage junction termination (HVJT) deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jan 14, 2020·8 cites·20 claims
- 0290US9680009B2High voltage semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jun 13, 2017·8 cites·20 claims
- 0387US11145713B2High voltage metal-oxide-semiconductor (HVMOS) device integrated with a high voltage junction termination (HVJT) deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Oct 12, 2021·4 cites·20 claims
- 0475US11942543B2Semiconductor device structure with high voltage deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 26, 2024·0 cites·20 claims
- 0571US10879236B2Bootstrap metal-oxide-semiconductor (MOS) device integrated with a high voltage MOS (HVMOS) device and a high voltage junction termination (HVJT) deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 29, 2020·1 cites·20 claims
- 0668US11424359B2Semiconductor device structure with high voltage deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 23, 2022·0 cites·20 claims
- 0759US10892360B2Semiconductor device structure with high voltage deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jan 12, 2021·0 cites·20 claims
- 0855US10964781B2High voltage resistor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Mar 30, 2021·0 cites·20 claims
- 0954US10679987B2Bootstrap metal-oxide-semiconductor (MOS) device integrated with a high voltage MOS (HVMOS) device and a high voltage junction termination (HVJT) deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jun 9, 2020·0 cites·20 claims
- 1052US11862675B2High voltage metal-oxide-semiconductor (HVMOS) device integrated with a high voltage junction termination (HVJT) deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 2, 2024·0 cites·20 claims
- 1152US10297661B2High voltage resistor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted May 21, 2019·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →