Inventor · disambiguated record
Pranita Kulkarni
Also filed as: KULKARNI PRANITA
94 granted patents·20 pending applications·1,236 citations·filing 2009–2015
99Inventor score
Top patents by PatentIndex Score
114 records- 0199US8637384B2FinFET parasitic capacitance reduction using air gapANDO TAKASHI·Filed 2012·Granted Jan 28, 2014·374 cites·13 claims
- 0299US8637930B2FinFET parasitic capacitance reduction using air gapANDO TAKASHI·Filed 2011·Granted Jan 28, 2014·99 cites·14 claims
- 0397US8492854B1Integrated circuit having raised source drains devices with reduced silicide contact resistance and methods to fabricate sameIBM·Filed 2012·Granted Jul 23, 2013·19 cites·6 claims
- 0497US8486776B2Strained devices, methods of manufacture and design structuresBEDELL STEPHEN W·Filed 2010·Granted Jul 16, 2013·29 cites·20 claims
- 0597US8445356B1Integrated circuit having back gating, improved isolation and reduced well resistance and method to fabricate sameCAI JIN·Filed 2012·Granted May 21, 2013·34 cites·13 claims
- 0697US8435845B2Junction field effect transistor with an epitaxially grown gate structureNING TAK H·Filed 2011·Granted May 7, 2013·29 cites·22 claims
- 0797US8338260B2Raised source/drain structure for enhanced strain coupling from stress linerCHENG KANGGUO·Filed 2010·Granted Dec 25, 2012·25 cites·6 claims
- 0897US8207038B2Stressed Fin-FET devices with low contact resistanceCHENG KANGGUO·Filed 2010·Granted Jun 26, 2012·29 cites·9 claims
- 0996US8530974B2CMOS structure having multiple threshold voltage devicesCHENG KANGGUO·Filed 2012·Granted Sep 10, 2013·25 cites·5 claims
- 1096US8455932B2Local interconnect structure self-aligned to gate structureKHAKIFIROOZ ALI·Filed 2011·Granted Jun 4, 2013·28 cites·20 claims
- 1196US8395217B1Isolation in CMOSFET devices utilizing buried air bagsCHENG KANGGUO·Filed 2011·Granted Mar 12, 2013·33 cites·18 claims
- 1296US8124470B1Strained thin body semiconductor-on-insulator substrate and deviceBEDELL STEPHEN W·Filed 2010·Granted Feb 28, 2012·22 cites·17 claims
- 1395US8803233B2Junctionless transistorCHENG KANGGUO·Filed 2011·Granted Aug 12, 2014·17 cites·20 claims
- 1495US8399938B2Stressed Fin-FET devices with low contact resistanceCHENG KANGGUO·Filed 2012·Granted Mar 19, 2013·19 cites·9 claims
- 1595US8368143B2Strained thin body semiconductor-on-insulator substrate and deviceIBM·Filed 2011·Granted Feb 5, 2013·19 cites·8 claims
- 1695US8169024B2Method of forming extremely thin semiconductor on insulator (ETSOI) device without ion implantationCHENG KANGGUO·Filed 2009·Granted May 1, 2012·33 cites·13 claims
- 1794US8742508B2Three dimensional FET devices having different device widthsCHENG KANGGUO·Filed 2011·Granted Jun 3, 2014·16 cites·12 claims
- 1894US8653596B2Integrated circuit including DRAM and SRAM/logicCHENG KANGGUO·Filed 2012·Granted Feb 18, 2014·16 cites·17 claims
- 1994US8564040B1Inversion mode varactorDORIS BRUCE B·Filed 2012·Granted Oct 22, 2013·13 cites·17 claims
- 2094US8525292B2SOI device with DTI and STICHENG KANGGUO·Filed 2011·Granted Sep 3, 2013·16 cites·7 claims
- 2194US8377759B2Controlled fin-merging for fin type FET devicesIBM·Filed 2010·Granted Feb 19, 2013·16 cites·10 claims
- 2293US8288296B2Integrated circuit with replacement metal gates and dual dielectricsWONG KEITH KWONG HON·Filed 2010·Granted Oct 16, 2012·21 cites·15 claims
- 2392US8673699B2Semiconductor structure having NFET extension last implantsADAM THOMAS N·Filed 2012·Granted Mar 18, 2014·17 cites·11 claims
- 2491US9105577B2MOSFET with work function adjusted metal backgateCHENG KANGGUO·Filed 2012·Granted Aug 11, 2015·9 cites·6 claims
- 2591US8860107B2FinFET-compatible metal-insulator-metal capacitorHAENSCH WILFRIED E·Filed 2010·Granted Oct 14, 2014·17 cites·20 claims
- 2691US8546203B1Semiconductor structure having NFET extension last implantsCHENG KANGGUO·Filed 2012·Granted Oct 1, 2013·14 cites·23 claims
- 2790US8691650B2MOSFET with recessed channel film and abrupt junctionsCHENG KANGGUO·Filed 2011·Granted Apr 8, 2014·8 cites·8 claims
- 2890US8546228B2Strained thin body CMOS device having vertically raised source/drain stressors with single spacerDORIS BRUCE B·Filed 2010·Granted Oct 1, 2013·9 cites·12 claims
- 2990US8435846B2Semiconductor devices with raised extensionsCHENG KANGGUO·Filed 2011·Granted May 7, 2013·9 cites·8 claims
- 3089US8900973B2Method to enable compressively strained pFET channel in a FinFET structure by implant and thermal diffusionBERLINER NATHANIEL C·Filed 2011·Granted Dec 2, 2014·14 cites·18 claims
- 3188US8906754B2Methods of forming a semiconductor device with a protected gate cap layer and the resulting deviceGLOBALFOUNDRIES INC·Filed 2013·Granted Dec 9, 2014·8 cites·19 claims
- 3288US8890245B2Raised source/drain structure for enhanced strain coupling from stress linerCHENG KANGGUO·Filed 2012·Granted Nov 18, 2014·7 cites·14 claims
- 3388US8658505B2Embedded stressors for multigate transistor devicesCAI MING·Filed 2011·Granted Feb 25, 2014·9 cites·9 claims
- 3488US8552487B2SOI trench DRAM structure with backside strapDORIS BRUCE B·Filed 2012·Granted Oct 8, 2013·8 cites·13 claims
- 3588US8482078B2Integrated circuit diodeCHENG KANGGUO·Filed 2011·Granted Jul 9, 2013·8 cites·14 claims
- 3688US8202767B2Device and method of reducing junction leakageCHENG KANGGUO·Filed 2010·Granted Jun 19, 2012·7 cites·17 claims
- 3787US8470678B2Tensile stress enhancement of nitride film for stressed channel field effect transistor fabricationCAI MING·Filed 2011·Granted Jun 25, 2013·8 cites·20 claims
- 3886US8492839B2Same-chip multicharacteristic semiconductor structuresDORIS BRUCE B·Filed 2010·Granted Jul 23, 2013·7 cites·18 claims
- 3985US9059292B2Source and drain doping profile control employing carbon-doped semiconductor materialONTALUS VIOREL·Filed 2012·Granted Jun 16, 2015·8 cites·6 claims
- 4085US8304301B2Implant free extremely thin semiconductor devicesCHENG KANGGUO·Filed 2009·Granted Nov 6, 2012·9 cites·15 claims
- 4184US8536032B2Formation of embedded stressor through ion implantationCHENG KANGGUO·Filed 2011·Granted Sep 17, 2013·7 cites·9 claims
- 4284US8445345B2CMOS structure having multiple threshold voltage devicesCHENG KANGGUO·Filed 2011·Granted May 21, 2013·6 cites·11 claims
- 4382US9385050B2Structure and method to fabricate resistor on finFET processesHAENSCH WILFRIED ERNST-AUGUST·Filed 2011·Granted Jul 5, 2016·7 cites·20 claims
- 4482US8673738B2Shallow trench isolation structuresDORIS BRUCE B·Filed 2012·Granted Mar 18, 2014·4 cites·14 claims
- 4582US8642415B2Semiconductor substrate with transistors having different threshold voltagesADAM THOMAS N·Filed 2012·Granted Feb 4, 2014·5 cites·9 claims
- 4682US8362560B2Field effects transistor with asymmetric abrupt junction implantIBM·Filed 2010·Granted Jan 29, 2013·4 cites·13 claims
- 4782US8288217B2Stressor in planar field effect transistor deviceGUO DECHAO·Filed 2010·Granted Oct 16, 2012·6 cites·18 claims
- 4881US8598663B2Semiconductor structure having NFET and PFET formed in SOI substrate with underlapped extensionsCHENG KANGGUO·Filed 2011·Granted Dec 3, 2013·6 cites·23 claims
- 4980US8871582B2Methods of forming a semiconductor device with a protected gate cap layer and the resulting deviceGLOBALFOUNDRIES INC·Filed 2013·Granted Oct 28, 2014·5 cites·13 claims
- 5079US8895379B2Integrated circuit having raised source drains devices with reduced silicide contact resistance and methods to fabricate sameCHENG KANGGUO·Filed 2012·Granted Nov 25, 2014·3 cites·9 claims
Showing the top 50 of 114 patent records by PatentIndex Score.
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