Inventor · disambiguated record
Shengqiang Bai
Also filed as: BAI SHENGQIANG
2 granted patents·3 pending applications·6 citations·filing 2005–2009
51Inventor score
Top patents by PatentIndex Score
5 records- 0163US8097802B2Thermoelectric material including a multiple transition metal-doped type I clathrate crystal structureYANG JIHUI·Filed 2009·Granted Jan 17, 2012·3 cites·20 claims
- 0254US2011218109A1Clathrate compoundsBAI SHENGQIANG·Filed 2009·Application pending·0 cites
- 0352US2010071741A1Thermoelectric material including a filled skutterudite crystal structureGM GLOBAL TECH OPERATIONS INC·Filed 2009·Application pending·0 cites
- 0447US7321157B2CoSb3-based thermoelectric device fabrication methodGM GLOBAL TECH OPERATIONS INC·Filed 2005·Granted Jan 22, 2008·3 cites·20 claims
- 0544US2009293930A1High efficiency skutterudite type thermoelectric materials and devicesGM GLOBAL TECH OPERATIONS INC·Filed 2009·Application pending·0 cites
Join the waitlist — get patent alerts
Get an alert when Shengqiang Bai files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →