Inventor · disambiguated record
Jay Paul John
Also filed as: JOHN JAY P · John Jay Paul
30 granted patents·7 pending applications·98 citations·filing 2000–2024
95Inventor score
Top patents by PatentIndex Score
37 records- 0193US9786770B1Semiconductor device structure with non planar slide wallFREESCALE SEMICONDUCTOR INC·Filed 2016·Granted Oct 10, 2017·9 cites·14 claims
- 0285US7816221B2Dielectric ledge for high frequency devicesFREESCALE SEMICONDUCTOR INC·Filed 2008·Granted Oct 19, 2010·12 cites·15 claims
- 0384US11018247B1Semiconductor device with a base link region and method thereforNXP USA INC·Filed 2019·Granted May 25, 2021·3 cites·23 claims
- 0484US8084786B2Silicided base structure for high frequency transistorsJOHN JAY P·Filed 2010·Granted Dec 27, 2011·7 cites·20 claims
- 0582US9004756B2Temperature sensorJOHN JAY P·Filed 2012·Granted Apr 14, 2015·6 cites·19 claims
- 0680US7803685B2Silicided base structure for high frequency transistorsFREESCALE SEMICONDUCTOR INC·Filed 2008·Granted Sep 28, 2010·7 cites·12 claims
- 0777US7341915B2Method of making planar double gate silicon-on-insulator structuresFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Mar 11, 2008·9 cites·18 claims
- 0875US8530972B2Double gate MOSFET with coplanar surfaces for contacting source, drain, and bottom gateJOHN JAY P·Filed 2010·Granted Sep 10, 2013·4 cites·20 claims
- 0973US10825922B2Semiconductor device and method of manufacturing a semiconductor deviceNXP USA INC·Filed 2019·Granted Nov 3, 2020·1 cites·20 claims
- 1073US6461925B1Method of manufacturing a heterojunction BiCMOS integrated circuitMOTOROLA INC·Filed 2000·Granted Oct 8, 2002·22 cites·28 claims
- 1172US11817486B2Semiconductor device and method of making a semiconductor deviceNXP USA INC·Filed 2022·Granted Nov 14, 2023·0 cites·17 claims
- 1272US10269943B2Semiconductor device structure with non planar slide wallNXP USA INC·Filed 2017·Granted Apr 23, 2019·1 cites·12 claims
- 1370US7611955B2Method of forming a bipolar transistor and semiconductor component thereofFREESCALE SEMICONDUCTOR INC·Filed 2006·Granted Nov 3, 2009·4 cites·20 claims
- 1468US11569357B2Semiconductor device and method of making a semiconductor deviceNXP USA INC·Filed 2021·Granted Jan 31, 2023·0 cites·12 claims
- 1568US7442616B2Method of manufacturing a bipolar transistor and bipolar transistor thereofFREESCALE SEMICONDUCTOR INC·Filed 2006·Granted Oct 28, 2008·4 cites·20 claims
- 1667US8664698B2Bipolar transistor and method with recessed base electrodeJOHN JAY P·Filed 2011·Granted Mar 4, 2014·2 cites·18 claims
- 1766US7704838B2Method for forming an independent bottom gate connection for buried interconnection including bottom gate of a planar double gate MOSFETFREESCALE SEMICONDUCTOR INC·Filed 2006·Granted Apr 27, 2010·3 cites·17 claims
- 1862US9105678B2Semiconductor devices with recessed base electrodeJOHN JAY P·Filed 2014·Granted Aug 11, 2015·1 cites·19 claims
- 1961US12457784B2Semiconductor device with lateral base link regionNXP BV·Filed 2022·Granted Oct 28, 2025·0 cites·19 claims
- 2059US7638386B2Integrated CMOS and bipolar devices method and structureFREESCALE SEMICONDUCTOR INC·Filed 2006·Granted Dec 29, 2009·2 cites·15 claims
- 2158US12501634B2Method for forming a transistor with a conductivity doped base structureNXP USA INC·Filed 2022·Granted Dec 16, 2025·0 cites·19 claims
- 2258US2025098189A1Bipolar transistor and method of making a bipolar transistorNXP BV·Filed 2024·Application pending·0 cites
- 2357US12132093B2Base silicide on monocrystalline base structuresNXP USA INC·Filed 2022·Granted Oct 29, 2024·0 cites·20 claims
- 2457US7932145B2Method of forming a bipolar transistor and semiconductor component thereofFREESCALE SEMICONDUCTOR INC·Filed 2009·Granted Apr 26, 2011·1 cites·20 claims
- 2556US11640975B2Silicided collector structureNXP USA INC·Filed 2021·Granted May 2, 2023·0 cites·17 claims
- 2656US2025254900A1Semiconductor device with monocrystalline extrinsic baseNXP BV·Filed 2024·Application pending·0 cites
- 2754US10763782B1Tunable inductorsNXP USA INC·Filed 2020·Granted Sep 1, 2020·0 cites·20 claims
- 2854US2024304707A1Sige hbt and methods of manufacturing the sameNXP BV·Filed 2024·Application pending·0 cites
- 2953US2023420546A1Transistor with current terminal regions and channel region in layer over dielectricNXP USA INC·Filed 2022·Application pending·0 cites
- 3053US2024178304A1Semiconductor device with a monocrystalline extrinsic base and method thereforNXP BV·Filed 2022·Application pending·0 cites
- 3152US2024234552A1Method of manufacturing a silicon bipolar junction transistor, and a bjtNXP BV·Filed 2023·Application pending·0 cites
- 3251US11855173B2Transistor with monocrystalline base structuresNXP USA INC·Filed 2021·Granted Dec 26, 2023·0 cites·20 claims
- 3351US9099445B2Electronic device including interconnects with a cavity therebetween and a process of forming the sameTRIVEDI VISHAL P·Filed 2013·Granted Aug 4, 2015·0 cites·20 claims
- 3446US8530347B2Electronic device including interconnects with a cavity therebetween and a process of forming the sameTRIVEDI VISHAL P·Filed 2010·Granted Sep 10, 2013·0 cites·17 claims
- 3543US7821103B2Counter-doped varactor structure and methodFREESCALE SEMICONDUCTOR INC·Filed 2008·Granted Oct 26, 2010·0 cites·21 claims
- 3642US10134637B1Method of forming a semiconductor component having multiple bipolar transistors with different characteristicsNXP USA INC·Filed 2017·Granted Nov 20, 2018·0 cites·20 claims
- 3741US2014147985A1Methods for the fabrication of semiconductor devices including sub-isolation buried layersFREESCALE SEMICONDUCTOR INC·Filed 2012·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →