Inventor · disambiguated record
Dong Sun Sheen
Also filed as: SHEEN DONG SUN
37 granted patents·7 pending applications·163 citations·filing 1996–2023
97Inventor score
Files withHYNIX SEMICONDUCTOR INC19SK HYNIX INC16KIM MIN-SOO3HYUNDAI ELECTRONICS IND2WHANG SUNG-JIN2
Top patents by PatentIndex Score
44 records- 0196US9245962B1Method of manufacturing semiconductor deviceSK HYNIX INC·Filed 2015·Granted Jan 26, 2016·39 cites·22 claims
- 0290US7655533B2Semiconductor device having reduced standby leakage current and increased driving current and method for manufacturing the sameHYNIX SEMICONDUCTOR INC·Filed 2007·Granted Feb 2, 2010·15 cites·24 claims
- 0388US11545190B2Semiconductor memory deviceSK HYNIX INC·Filed 2019·Granted Jan 3, 2023·6 cites·19 claims
- 0488US8928063B2Non-volatile memory device and method for fabricating the sameKIM MIN-SOO·Filed 2012·Granted Jan 6, 2015·8 cites·10 claims
- 0588US8735962B2Semiconductor device and method of manufacturing the sameWHANG SUNG JIN·Filed 2012·Granted May 27, 2014·10 cites·7 claims
- 0685US7585730B1Method of fabricating a non-volatile memory deviceHYNIX SEMICONDUCTOR INC·Filed 2008·Granted Sep 8, 2009·13 cites·12 claims
- 0784US11871556B2Memory deviceSK HYNIX INC·Filed 2021·Granted Jan 9, 2024·1 cites·15 claims
- 0883US10373973B2Method of manufacturing semiconductor device through by-product removal from conductive layerSK HYNIX INC·Filed 2018·Granted Aug 6, 2019·3 cites·19 claims
- 0981US7888208B2Method of fabricating non-volatile memory deviceHYNIX SEMICONDUCTOR INC·Filed 2008·Granted Feb 15, 2011·10 cites·20 claims
- 1079US12225710B2Memory device with cross shape active layer surrounded by word lineSK HYNIX INC·Filed 2023·Granted Feb 11, 2025·0 cites·10 claims
- 1179US9466609B23-dimensional nonvolatile memory device and method of manufacturing the sameSK HYNIX INC·Filed 2014·Granted Oct 11, 2016·3 cites·12 claims
- 1278US7655534B2Method of forming fin transistorHYNIX SEMICONDUCTOR INC·Filed 2006·Granted Feb 2, 2010·6 cites·14 claims
- 1376US9159570B2Non-volatile memory device and method for fabricating the sameSK HYNIX INC·Filed 2014·Granted Oct 13, 2015·3 cites·8 claims
- 1475US12224031B2Semiconductor memory deviceSK HYNIX INC·Filed 2022·Granted Feb 11, 2025·0 cites·15 claims
- 1575US12148501B2Semiconductor memory deviceSK HYNIX INC·Filed 2022·Granted Nov 19, 2024·0 cites·10 claims
- 1674US2024057309A1Memory cell and memory deviceSK HYNIX INC·Filed 2023·Application pending·0 cites
- 1773US8860119B2Nonvolatile memory device and method for fabricating the sameKIM MIN-SOO·Filed 2012·Granted Oct 14, 2014·3 cites·16 claims
- 1872US8048742B2Transistor including bulb-type recess channel and method for fabricating the sameHYNIX SEMICONDUCTOR INC·Filed 2007·Granted Nov 1, 2011·4 cites·11 claims
- 1971US9385135B2Nonvolatile memory device and method for fabricating the sameSK HYNIX INC·Filed 2014·Granted Jul 5, 2016·2 cites·9 claims
- 2068US8928059B2Nonvolatile memory device and method for fabricating the sameWHANG SUNG-JIN·Filed 2012·Granted Jan 6, 2015·2 cites·5 claims
- 2167US11832434B2Memory cell and memory deviceSK HYNIX INC·Filed 2021·Granted Nov 28, 2023·0 cites·18 claims
- 2266US7087515B2Method for forming flowable dielectric layer in semiconductor deviceHYNIX SEMICONDUCTOR INC·Filed 2003·Granted Aug 8, 2006·10 cites·8 claims
- 2365US10546877B2Semiconductor device and method of fabricating the sameSK HYNIX INC·Filed 2019·Granted Jan 28, 2020·0 cites·7 claims
- 2462US10559589B2Semiconductor device and method of fabricating the sameSK HYNIX INC·Filed 2018·Granted Feb 11, 2020·0 cites·11 claims
- 2562US8178921B2Semiconductor device having reduced standby leakage current and increased driving current and method for manufacturing the sameSHEEN DONG SUN·Filed 2009·Granted May 15, 2012·2 cites·4 claims
- 2662US7687355B2Method for manufacturing fin transistor that prevents etching loss of a spin-on-glass insulation layerHYNIX SEMICONDUCTOR INC·Filed 2007·Granted Mar 30, 2010·2 cites·13 claims
- 2759US10714499B2Method of manufacturing semiconductor deviceSK HYNIX INC·Filed 2019·Granted Jul 14, 2020·0 cites·10 claims
- 2859US7687371B2Method of forming isolation structure of semiconductor device for preventing excessive loss during recess gate formationHYNIX SEMICONDUCTOR INC·Filed 2008·Granted Mar 30, 2010·1 cites·16 claims
- 2953US10644029B1Semiconductor device and method of fabricating the sameSK HYNIX INC·Filed 2019·Granted May 5, 2020·0 cites·11 claims
- 3053US2008194104A1Apparatus for plasma chemical vapor deposition and method for fabricating semiconductor device by using the sameHYNIX SEMICONDUCTOR INC·Filed 2008·Application pending·0 cites
- 3150US7538007B2Semiconductor device with flowable insulation layer formed on capacitor and method for fabricating the sameHYNIX SEMICONDUCTOR INC·Filed 2004·Granted May 26, 2009·2 cites·11 claims
- 3250US7501687B2Method of forming isolation structure of semiconductor device for preventing excessive loss during recess gate formationHYNIX SEMICONDUCTOR INC·Filed 2006·Granted Mar 10, 2009·0 cites·5 claims
- 3350US2013099304A13-dimensional nonvolatile memory device and method of manufacturing the sameKIM MIN SOO·Filed 2012·Application pending·0 cites
- 3448US8330215B2Transistor including bulb-type recess channel and method for fabricating the sameLIM KWAN-YONG·Filed 2011·Granted Dec 11, 2012·0 cites·8 claims
- 3548US2006094218A1Apparatus for plasma chemical vapor deposition and method for fabricating semiconductor device by using the sameHYNIX SEMICONDUCTOR INC·Filed 2005·Application pending·0 cites
- 3647US7795086B2Method of manufacturing semiconductor device using salicide processHYNIX SEMICONDUCTOR INC·Filed 2008·Granted Sep 14, 2010·0 cites·13 claims
- 3747US2009029523A1Method of Fabricating Flash Memory DeviceHYNIX SEMICONDUCTOR INC·Filed 2008·Application pending·0 cites
- 3845US7687362B2Semiconductor device with increased channel length and width and method for manufacturing the sameHYNIX SEMICONDUCTOR INC·Filed 2007·Granted Mar 30, 2010·0 cites·7 claims
- 3945US7563654B2Method of manufacturing semiconductor device for formation of pin transistorHYNIX SEMICONDUCTOR INC·Filed 2006·Granted Jul 21, 2009·0 cites·19 claims
- 4045US7166519B2Method for isolating semiconductor devices with use of shallow trench isolation methodHYNIX SEMICONDUCTOR INC·Filed 2004·Granted Jan 23, 2007·1 cites·11 claims
- 4143US2008224212A1Semiconductor device and method for fabricating the sameHYNIX SEMICONDUCTOR INC·Filed 2007·Application pending·0 cites
- 4242US2009163013A1Method for Forming Gate of Non-Volatile Memory DeviceHYNIX SEMICONDUCTOR INC·Filed 2008·Application pending·0 cites
- 4341US5744397AMethod of planarizing an insulating layerHYUNDAI ELECTRONICS IND·Filed 1996·Granted Apr 28, 1998·8 cites·4 claims
- 4438US5902122AMethod of manufacturing an ILD layer by plasma treatment before applying SOGHYUNDAI ELECTRONICS IND·Filed 1996·Granted May 11, 1999·9 cites·1 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →