Inventor · disambiguated record
Andrei Mihnea
Also filed as: MIHNEA ANDREI
75 granted patents·2 pending applications·1,256 citations·filing 1996–2014
99Inventor score
Top patents by PatentIndex Score
77 records- 0197US8395942B2Junctionless TFT NAND flash memorySAMACHISA GEORGE·Filed 2010·Granted Mar 12, 2013·44 cites·2 claims
- 0297US8389971B2Memory cells having storage elements that share material layers with steering elements and methods of forming the sameCHEN YUNG-TIN·Filed 2010·Granted Mar 5, 2013·44 cites·51 claims
- 0396US8274130B2Punch-through diode steering elementMIHNEA ANDREI·Filed 2009·Granted Sep 25, 2012·40 cites·20 claims
- 0496US7068543B2Flash memoryMICRON TECHNOLOGY INC·Filed 2005·Granted Jun 27, 2006·29 cites·21 claims
- 0595US9099202B23D stacked non-volatile storage programming to conductive stateSANDISK TECHNOLOGIES INC·Filed 2012·Granted Aug 4, 2015·24 cites·22 claims
- 0694US8520425B2Resistive random access memory with low current operationXIAO LI·Filed 2012·Granted Aug 27, 2013·40 cites·19 claims
- 0794US7212435B2Minimizing adjacent wordline disturb in a memory deviceMICRON TECHNOLOGY INC·Filed 2004·Granted May 1, 2007·68 cites·16 claims
- 0894US6426898B1Method of reducing trapped holes induced by erase operations in the tunnel oxide of flash memory cellsMICRON TECHNOLOGY INC·Filed 2001·Granted Jul 30, 2002·76 cites·53 claims
- 0994US6384447B2Flash memory cell for high efficiency programmingMICRON TECHNOLOGY INC·Filed 2001·Granted May 7, 2002·55 cites·25 claims
- 1094US6272047B1Flash memory cellMICRON TECHNOLOGY INC·Filed 1999·Granted Aug 7, 2001·72 cites·22 claims
- 1193US7272039B2Minimizing adjacent wordline disturb in a memory deviceMICRON TECHNOLOGY INC·Filed 2006·Granted Sep 18, 2007·27 cites·14 claims
- 1292US6795348B2Method and apparatus for erasing flash memoryMICRON TECHNOLOGY INC·Filed 2002·Granted Sep 21, 2004·36 cites·33 claims
- 1392US6449189B2Flash memory cell for high efficiency programmingMICRON TECHNOLOGY INC·Filed 2001·Granted Sep 10, 2002·41 cites·27 claims
- 1491US8514629B2Method for memory cell erasure with a programming monitor of reference cellsGODA AKIRA·Filed 2012·Granted Aug 20, 2013·10 cites·20 claims
- 1591US7099220B2Methods for erasing flash memoryMICRON TECHNOLOGY INC·Filed 2004·Granted Aug 29, 2006·29 cites·11 claims
- 1691US7057932B2Flash memoryMICRON TECHNOLOGY INC·Filed 2005·Granted Jun 6, 2006·14 cites·20 claims
- 1791US6445619B1Flash memory cell for high efficiency programmingMICRON TECHNOLOGY INC·Filed 2001·Granted Sep 3, 2002·38 cites·28 claims
- 1891US5793079ASingle transistor non-volatile electrically alterable semiconductor memory deviceCATALYST SEMICONDUCTOR INC·Filed 1996·Granted Aug 11, 1998·100 cites·31 claims
- 1988US8841648B2Multi-level memory arrays with memory cells that employ bipolar storage elements and methods of forming the sameCHEN YUNG-TIN·Filed 2010·Granted Sep 23, 2014·9 cites·20 claims
- 2088US8264885B2Method for memory cell erasure with a programming monitor of reference cellsGODA AKIRA·Filed 2011·Granted Sep 11, 2012·8 cites·22 claims
- 2188US6684173B2System and method of testing non-volatile memory cellsMICRON TECHNOLOGY INC·Filed 2001·Granted Jan 27, 2004·49 cites·23 claims
- 2287US6798699B2Flash memory device and method of erasingMICRON TECHNOLOGY INC·Filed 2003·Granted Sep 28, 2004·37 cites·38 claims
- 2387US6493280B2Method of reducing trapped holes induced by erase operations in the tunnel oxide of flash memory cellsMICRON TECHNOLOGY INC·Filed 2001·Granted Dec 10, 2002·37 cites·29 claims
- 2486US7499325B2Flash memory device with improved erase operationINTEL CORP·Filed 2006·Granted Mar 3, 2009·17 cites·28 claims
- 2586US7257024B2Minimizing adjacent wordline disturb in a memory deviceMICRON TECHNOLOGY INC·Filed 2006·Granted Aug 14, 2007·14 cites·17 claims
- 2686US6798694B2Method for reducing drain disturb in programmingMICRON TECHNOLOGY INC·Filed 2002·Granted Sep 28, 2004·35 cites·28 claims
- 2786US6563741B2Flash memory device and method of erasingMICRON TECHNOLOGY INC·Filed 2001·Granted May 13, 2003·34 cites·36 claims
- 2885US7924623B2Method for memory cell erasure with a programming monitor of reference cellsMICRON TECHNOLOGY INC·Filed 2008·Granted Apr 12, 2011·11 cites·7 claims
- 2985US7099195B2Methods for neutralizing holes in tunnel oxides of floating-gate memory cells and devicesMICRON TECHNOLOGY INC·Filed 2005·Granted Aug 29, 2006·8 cites·16 claims
- 3085US6649453B1Contactless uniform-tunneling separate p-well (CUSP) non-volatile memory array architecture, fabrication and operationMICRON TECHNOLOGY INC·Filed 2002·Granted Nov 18, 2003·19 cites·52 claims
- 3183US8238170B2Non-volatile memory cell healingMIHNEA ANDREI·Filed 2010·Granted Aug 7, 2012·7 cites·24 claims
- 3282US7701780B2Non-volatile memory cell healingMICRON TECHNOLOGY INC·Filed 2007·Granted Apr 20, 2010·11 cites·20 claims
- 3382US6873550B2Method for programming and erasing an NROM cellMICRON TECHNOLOGY INC·Filed 2003·Granted Mar 29, 2005·19 cites·27 claims
- 3481US7203098B2Methods of erasing flash memoryMICRON TECHNOLOGY INC·Filed 2005·Granted Apr 10, 2007·6 cites·22 claims
- 3581US7046557B2Flash memoryMICRON TECHNOLOGY INC·Filed 2004·Granted May 16, 2006·14 cites·20 claims
- 3679US7075831B2Method for erasing an NROM cellMICRON TECHNOLOGY INC·Filed 2005·Granted Jul 11, 2006·8 cites·18 claims
- 3779US7075832B2Method for erasing an NROM cellMICRON TECHNOLOGY INC·Filed 2005·Granted Jul 11, 2006·8 cites·16 claims
- 3875US7277327B2Methods for erasing flash memoryMICRON TECHNOLOGY INC·Filed 2005·Granted Oct 2, 2007·4 cites·19 claims
- 3975US7200048B2Flash memoryMICRON TECHNOLOGY INC·Filed 2005·Granted Apr 3, 2007·4 cites·23 claims
- 4074US8557654B2Punch-through diodeRABKIN PETER·Filed 2010·Granted Oct 15, 2013·4 cites·17 claims
- 4174US7619931B2Program-verify method with different read and verify pass-through voltagesMICRON TECHNOLOGY INC·Filed 2007·Granted Nov 17, 2009·7 cites·24 claims
- 4273US7085170B2Method for erasing an NROM cellMICRON TECHNOLOGY IND·Filed 2003·Granted Aug 1, 2006·16 cites·11 claims
- 4372US8351243B2Transistor driven 3D memorySANDISK 3D LLC·Filed 2010·Granted Jan 8, 2013·3 cites·7 claims
- 4472US7885091B2Limited charge delivery for programming non-volatile storage elementsSANDISK 3D LLC·Filed 2009·Granted Feb 8, 2011·7 cites·30 claims
- 4572US7215572B2Methods for neutralizing holes in tunnel oxides of floating-gate memory cells and devicesMICRON TECHNOLOGY INC·Filed 2004·Granted May 8, 2007·8 cites·16 claims
- 4671US8624293B2Carbon/tunneling-barrier/carbon diodeBANDYOPADHYAY ABHIJIT·Filed 2009·Granted Jan 7, 2014·4 cites·23 claims
- 4771US7277326B2Methods for erasing flash memoryMICRON TECHNOLOGY INC·Filed 2005·Granted Oct 2, 2007·3 cites·26 claims
- 4870US8542542B2Non-volatile memory cell healingMIHNEA ANDREI·Filed 2012·Granted Sep 24, 2013·3 cites·21 claims
- 4970US7088619B2Method for programming and erasing an NROM cellMICRON TECHNOLOGY INC·Filed 2005·Granted Aug 8, 2006·4 cites·20 claims
- 5069US6587376B2Flash memory cell for high efficiency programmingMICRON TECHNOLOGY INC·Filed 2002·Granted Jul 1, 2003·9 cites·33 claims
Showing the top 50 of 77 patent records by PatentIndex Score.
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