Inventor · disambiguated record
Jack Yuan
Also filed as: YUAN JACK · YUAN JACK H
72 granted patents·8 pending applications·7,190 citations·filing 1989–2025
99Inventor score
Files withSANDISK CORP48SPRING DESIGN INC5QUICKBIZ HOLDINGS LTD4SPRING DESIGN CO LTD4QUICKBIZ HOLDINGS LTD APIA3
Top patents by PatentIndex Score
80 records- 0199US6925007B2Multi-state non-volatile integrated circuit memory systems that employ dielectric storage elementsSANDISK CORP·Filed 2002·Granted Aug 2, 2005·241 cites·22 claims
- 0299US6512263B1Non-volatile memory cell array having discontinuous source and drain diffusions contacted by continuous bit line conductors and methods of formingSANDISK CORP·Filed 2000·Granted Jan 28, 2003·329 cites·17 claims
- 0399US6151248ADual floating gate EEPROM cell array with steering gates shared by adjacent cellsSANDISK CORP·Filed 1999·Granted Nov 21, 2000·462 cites·31 claims
- 0499US6103573AProcessing techniques for making a dual floating gate EEPROM cell arraySANDISK CORP·Filed 1999·Granted Aug 15, 2000·390 cites·27 claims
- 0599US5661053AMethod of making dense flash EEPROM cell array and peripheral supporting circuits formed in deposited field oxide with the use of spacersSANDISK CORP·Filed 1994·Granted Aug 26, 1997·859 cites·23 claims
- 0699US5595924ATechnique of forming over an irregular surface a polysilicon layer with a smooth surfaceSANDISK CORP·Filed 1994·Granted Jan 21, 1997·484 cites·8 claims
- 0799US5343063ADense vertical programmable read only memory cell structure and processes for making themSUNDISK CORP·Filed 1990·Granted Aug 30, 1994·903 cites·43 claims
- 0899US5070032AMethod of making dense flash eeprom semiconductor memory structuresSUNDISK CORP·Filed 1989·Granted Dec 3, 1991·904 cites·30 claims
- 0998US7342279B2Multi-state non-volatile integrated circuit memory systems that employ dielectric storage elementsSANDISK CORP·Filed 2005·Granted Mar 11, 2008·65 cites·34 claims
- 1098US6266278B1Dual floating gate EEPROM cell array with steering gates shared adjacent cellsSANDISK CORP·Filed 2000·Granted Jul 24, 2001·173 cites·5 claims
- 1197US7211866B2Scalable self-aligned dual floating gate memory cell array and methods of forming the arraySANDISK CORP·Filed 2005·Granted May 1, 2007·45 cites·13 claims
- 1297US6936887B2Non-volatile memory cells utilizing substrate trenchesSANDISK CORP·Filed 2001·Granted Aug 30, 2005·101 cites·30 claims
- 1397US6420231B1Processing techniques for making a dual floating gate EEPROM cell arraySANDISK CORP·Filed 2000·Granted Jul 16, 2002·138 cites·14 claims
- 1497US5380672ADense vertical programmable read only memory cell structures and processes for making themSUNDISK CORP·Filed 1993·Granted Jan 10, 1995·139 cites·24 claims
- 1596US6344993B1Dual floating gate EEPROM cell array with steering gates shared by adjacent cellsSANDISK CORP·Filed 2001·Granted Feb 5, 2002·96 cites·4 claims
- 1696US5712179AMethod of making triple polysilicon flash EEPROM arrays having a separate erase gate for each row of floating gatesSANDISK CORP·Filed 1995·Granted Jan 27, 1998·137 cites·7 claims
- 1796US5677872ALow voltage erase of a flash EEPROM system having a common erase electrode for two individual erasable sectorsSANDISK CORP·Filed 1996·Granted Oct 14, 1997·129 cites·8 claims
- 1895US7341918B2Multi-state non-volatile integrated circuit memory systems that employ dielectric storage elementsSANDISK CORP·Filed 2005·Granted Mar 11, 2008·24 cites·9 claims
- 1995US6762092B2Scalable self-aligned dual floating gate memory cell array and methods of forming the arraySANDISK CORP·Filed 2001·Granted Jul 13, 2004·78 cites·20 claims
- 2095US6532172B2Steering gate and bit line segmentation in non-volatile memoriesSANDISK CORP·Filed 2001·Granted Mar 11, 2003·101 cites·15 claims
- 2195US6281075B1Method of controlling of floating gate oxide growth by use of an oxygen barrierSANDISK CORP·Filed 1999·Granted Aug 28, 2001·116 cites·2 claims
- 2295US5534456AMethod of making dense flash EEPROM cell array and peripheral supporting circuits formed in deposited field oxide with sidewall spacersSANDISK CORP·Filed 1995·Granted Jul 9, 1996·171 cites·9 claims
- 2394US11134113B2User interface content state synchronization across devicesSPRING DESIGN INC·Filed 2020·Granted Sep 28, 2021·5 cites·7 claims
- 2494US5579259ALow voltage erase of a flash EEPROM system having a common erase electrode for two individually erasable sectorsSANDISK CORP·Filed 1995·Granted Nov 26, 1996·103 cites·15 claims
- 2592US11750673B2User interface content state synchronization across devicesSPRING DESIGN INC·Filed 2021·Granted Sep 5, 2023·3 cites·16 claims
- 2692US10298642B2User interface content state synchronization across devicesQUICKBIZ HOLDINGS LTD APIA·Filed 2016·Granted May 21, 2019·10 cites·9 claims
- 2792US9438697B2User interface content state synchronization across devicesQUICKBIZ HOLDINGS LTD·Filed 2013·Granted Sep 6, 2016·12 cites·21 claims
- 2892US6908817B2Flash memory array with increased coupling between floating and control gatesSANDISK CORP·Filed 2002·Granted Jun 21, 2005·50 cites·11 claims
- 2992US6028336ATriple polysilicon flash EEPROM arrays having a separate erase gate for each row of floating gates, and methods of manufacturing such arraysSANDISK CORP·Filed 1997·Granted Feb 22, 2000·67 cites·3 claims
- 3092US5965913ADense vertical programmable read only memory cell structures and processes for making themSANDISK CORP·Filed 1997·Granted Oct 12, 1999·74 cites·9 claims
- 3191US7990338B2Electronic devices having complementary dual displaysSPRING DESIGN CO LTD·Filed 2007·Granted Aug 2, 2011·31 cites·37 claims
- 3291US7966312B2Updatable result set for multiple joined tablesTERADATA US INC·Filed 2007·Granted Jun 21, 2011·70 cites·13 claims
- 3391US5847425ADense vertical programmable read only memory cell structures and processes for making themSANDISK CORP·Filed 1994·Granted Dec 8, 1998·61 cites·9 claims
- 3490US7579247B2Multi-state non-volatile integrated circuit memory systems that employ dielectric storage elementsSANDISK CORP·Filed 2008·Granted Aug 25, 2009·11 cites·9 claims
- 3589US10616295B2User interface content state synchronization across devicesQUICKBIZ HOLDINGS LTD APIA·Filed 2019·Granted Apr 7, 2020·6 cites·7 claims
- 3689US5747359AMethod of patterning polysilicon layers on substrateSANDISK CORP·Filed 1997·Granted May 5, 1998·75 cites·1 claims
- 3788US7517756B2Flash memory array with increased coupling between floating and control gatesSANDISK CORP·Filed 2007·Granted Apr 14, 2009·11 cites·9 claims
- 3888US7479677B2Multi-state non-volatile integrated circuit memory systems that employ dielectric storage elementsSANDISK CORP·Filed 2008·Granted Jan 20, 2009·9 cites·20 claims
- 3988US7416956B2Self-aligned trench filling for narrow gap isolation regionsSANDISK CORP·Filed 2005·Granted Aug 26, 2008·15 cites·26 claims
- 4088US6894343B2Floating gate memory cells utilizing substrate trenches to scale down their sizeSANDISK CORP·Filed 2001·Granted May 17, 2005·37 cites·18 claims
- 4188US5756385ADense flash EEPROM cell array and peripheral supporting circuits formed in deposited field oxide with the use of spacersSANDISK CORP·Filed 1995·Granted May 26, 1998·107 cites·4 claims
- 4287US12267375B2User interface content state synchronization across devicesSPRING DESIGN INC·Filed 2023·Granted Apr 1, 2025·1 cites·19 claims
- 4387US7834392B2Multi-state non-volatile integrated circuit memory systems that employ dielectric storage elementsSANDISK CORP·Filed 2009·Granted Nov 16, 2010·8 cites·14 claims
- 4487US6897522B2Multi-state non-volatile integrated circuit memory systems that employ dielectric storage elementsSANDISK CORP·Filed 2001·Granted May 24, 2005·37 cites·30 claims
- 4586US7402886B2Memory with self-aligned trenches for narrow gap isolation regionsSANDISK CORP·Filed 2005·Granted Jul 22, 2008·12 cites·5 claims
- 4686US5654217ADense flash EEPROM cell array and peripheral supporting circuits formed in deposited field oxide with the use of spacersSANDISK CORP·Filed 1995·Granted Aug 5, 1997·63 cites·8 claims
- 4785US7615820B2Self-aligned trenches with grown dielectric for high coupling ratio in semiconductor devicesSANDISK CORP·Filed 2008·Granted Nov 10, 2009·8 cites·19 claims
- 4885US7170131B2Flash memory array with increased coupling between floating and control gatesSANDISK CORP·Filed 2005·Granted Jan 30, 2007·9 cites·8 claims
- 4985US6723604B2Non-volatile memory cell array having discontinuous source and drain diffusions contacted by continuous bit line conductors and methods of formingSANDISK CORP·Filed 2002·Granted Apr 20, 2004·24 cites·4 claims
- 5084US6953970B2Scalable self-aligned dual floating gate memory cell array and methods of forming the arraySANDISK CORP·Filed 2004·Granted Oct 11, 2005·23 cites·13 claims
Showing the top 50 of 80 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →