Inventor · disambiguated record
Cheng-Ming Yih
Also filed as: YIH CHENG-MING
17 granted patents·4 pending applications·40 citations·filing 2003–2024
90Inventor score
Files withMACRONIX INT CO LTD11CHANG YI-FAN3LO CHUN-YUAN2MACRONIC INTERNAT CO LTD1POWERCHIP SEMICONDUCTOR MFG CORP1
Top patents by PatentIndex Score
21 records- 0185US8339861B2Method and apparatus of performing an erase operation on a memory integrated circuitCHANG YI-FAN·Filed 2010·Granted Dec 25, 2012·9 cites·20 claims
- 0282US7319618B2Low-k spacer structure for flash memoryMACRONIC INTERNAT CO LTD·Filed 2005·Granted Jan 15, 2008·13 cites·8 claims
- 0369US7005696B2Structure of nonvolatile memory arrayMACRONIX INT CO LTD·Filed 2003·Granted Feb 28, 2006·12 cites·4 claims
- 0461US7319611B2Bitline transistor architecture for flash memoryMACRONIX INT CO LTD·Filed 2006·Granted Jan 15, 2008·2 cites·12 claims
- 0560US8259499B2Method and apparatus of performing an erase operation on a memory integrated circuitCHANG YI-FAN·Filed 2010·Granted Sep 4, 2012·2 cites·20 claims
- 0656US2025246550A1Semiconductor device and method for forming the samePOWERCHIP SEMICONDUCTOR MFG CORP·Filed 2024·Application pending·0 cites
- 0755US7924591B2Memory device with shielding plugs adjacent to a dummy word line thereofMACRONIX INT CO LTD·Filed 2009·Granted Apr 12, 2011·2 cites·17 claims
- 0848US7795665B2Flash memoryMACRONIX INT CO LTD·Filed 2007·Granted Sep 14, 2010·0 cites·24 claims
- 0946US8043908B2Method of fabricating memoryMACRONIX INT CO LTD·Filed 2010·Granted Oct 25, 2011·0 cites·20 claims
- 1046US7846794B2Low-K spacer structure for flash memoryMACRONIX INT CO LTD·Filed 2007·Granted Dec 7, 2010·0 cites·9 claims
- 1144US8451641B2Memory array no common source region and method of fabricating the sameLO CHUN-YUAN·Filed 2012·Granted May 28, 2013·0 cites·12 claims
- 1243US8547755B2Method and apparatus of performing an erase operation on a memory integrated circuitCHANG YI-FAN·Filed 2012·Granted Oct 1, 2013·0 cites·16 claims
- 1342US8243489B2Memory device no common source region and method of fabricating the sameLO CHUN-YUAN·Filed 2011·Granted Aug 14, 2012·0 cites·8 claims
- 1442US2008299740A1Method for forming sti structureMACRONIX INT CO LTD·Filed 2007·Application pending·0 cites
- 1541US7663184B1Memory and method of fabricating the sameMACRONIX INT CO LTD·Filed 2008·Granted Feb 16, 2010·0 cites·10 claims
- 1641US2015194314A1Semiconductor device and method of fabricating the sameMACRONIX INT CO LTD·Filed 2014·Application pending·0 cites
- 1738US7616479B2Data writing method for flash memoriesMACRONIX INT CO LTD·Filed 2007·Granted Nov 10, 2009·0 cites·10 claims
- 1837US7244661B2Method for forming a buried diffusion layer with reducing topography in a surface of a semiconductor substrateMACRONIX INT CO LTD·Filed 2005·Granted Jul 17, 2007·0 cites·11 claims
- 1936US8471324B2Semiconductor deviceWU TIN-WEI·Filed 2009·Granted Jun 25, 2013·0 cites·16 claims
- 2034US8097912B2Systems and methods for self convergence during erase of a non-volatile memory deviceYIH CHENG-MING·Filed 2007·Granted Jan 17, 2012·0 cites·20 claims
- 2132US2005006795A1Corner free structure of nonvolatile memoryFiled 2003·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →