Inventor · disambiguated record
Anthony Arrott
Also filed as: ARROTT ANTHONY · ARROTT ANTHONY S
19 granted patents·1 pending application·260 citations·filing 2000–2006
95Inventor score
Files withMICRON TECHNOLOGY INC20
Top patents by PatentIndex Score
20 records- 0193US6424561B1MRAM architecture using offset bits for increased write selectivityMICRON TECHNOLOGY INC·Filed 2000·Granted Jul 23, 2002·56 cites·7 claims
- 0287US6765823B1Magnetic memory cell with shape anisotropyMICRON TECHNOLOGY INC·Filed 2003·Granted Jul 20, 2004·36 cites·47 claims
- 0386US6493259B1Pulse write techniques for magneto-resistive memoriesMICRON TECHNOLOGY INC·Filed 2000·Granted Dec 10, 2002·32 cites·20 claims
- 0483US6724654B1Pulsed write techniques for magneto-resistive memoriesMICRON TECHNOLOGY INC·Filed 2003·Granted Apr 20, 2004·25 cites·30 claims
- 0582US7038940B2Pulsed write techniques for magneto-resistive memoriesMICRON TECHNOLOGY INC·Filed 2005·Granted May 2, 2006·10 cites·16 claims
- 0680US6717194B2Magneto-resistive bit structure and method of manufacture thereforMICRON TECHNOLOGY INC·Filed 2001·Granted Apr 6, 2004·18 cites·20 claims
- 0773US6522574B2MRAM architectures for increased write selectivityMICRON TECHNOLOGY INC·Filed 2001·Granted Feb 18, 2003·13 cites·11 claims
- 0872US7200035B2Magneto-resistive memory cell structures with improved selectivityMICRON TECHNOLOGY INC·Filed 2005·Granted Apr 3, 2007·6 cites·30 claims
- 0970US6424564B2MRAM architectures for increased write selectivityMICRON TECHNOLOGY INC·Filed 2001·Granted Jul 23, 2002·11 cites·13 claims
- 1068US6735112B2Magneto-resistive memory cell structures with improved selectivityMICRON TECHNOLOGY INC·Filed 2002·Granted May 11, 2004·13 cites·15 claims
- 1167US6872997B2Method for manufacture of magneto-resistive bit structureMICRON TECHNOLOGY INC·Filed 2004·Granted Mar 29, 2005·8 cites·21 claims
- 1262US6920064B2Magneto-resistive memory cell structures with improved selectivityMICRON TECHNOLOGY INC·Filed 2004·Granted Jul 19, 2005·9 cites·30 claims
- 1358US7029923B2Method for manufacture of magneto-resistive bit structureMICRON TECHNOLOGY INC·Filed 2003·Granted Apr 18, 2006·4 cites·21 claims
- 1454US6906950B2Magneto-resistive memory cell with shape anistropy and memory device thereofMICRON TECHNOLOGY INC·Filed 2004·Granted Jun 14, 2005·6 cites·29 claims
- 1552US6850431B2Pulsed write techniques for magneto-resistive memoriesMICRON TECHNOLOGY INC·Filed 2004·Granted Feb 1, 2005·5 cites·21 claims
- 1652US6791856B2Methods of increasing write selectivity in an MRAMMICRON TECHNOLOGY INC·Filed 2002·Granted Sep 14, 2004·4 cites·18 claims
- 1748US7208323B2Method for forming magneto-resistive memory cells with shape anisotropyMICRON TECHNOLOGY INC·Filed 2005·Granted Apr 24, 2007·1 cites·30 claims
- 1848US6992918B2Methods of increasing write selectivity in an MRAMMICRON TECHNOLOGY INC·Filed 2003·Granted Jan 31, 2006·3 cites·14 claims
- 1935US6756240B2Methods of increasing write selectivity in an MRAMMICRON TECHNOLOGY INC·Filed 2003·Granted Jun 29, 2004·0 cites·9 claims
- 2035US2007279971A1Modified pseudo-spin valve (psv) for memory applicationsMICRON TECHNOLOGY INC·Filed 2006·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →