Inventor · disambiguated record
Andrew Bicksler
Also filed as: BICKSLER ANDREW · BICKSLER ANDREW R
44 granted patents·4 pending applications·291 citations·filing 2001–2025
97Inventor score
Files withMICRON TECHNOLOGY INC36BICKSLER ANDREW7LODESTAR LICENSING GROUP LLC2AHMED SHAFQAT1GODA AKIRA1
Top patents by PatentIndex Score
48 records- 0195US9437604B2Methods and apparatuses having strings of memory cells including a metal sourceMICRON TECHNOLOGY INC·Filed 2013·Granted Sep 6, 2016·21 cites·19 claims
- 0294US7212435B2Minimizing adjacent wordline disturb in a memory deviceMICRON TECHNOLOGY INC·Filed 2004·Granted May 1, 2007·68 cites·16 claims
- 0393US7272039B2Minimizing adjacent wordline disturb in a memory deviceMICRON TECHNOLOGY INC·Filed 2006·Granted Sep 18, 2007·27 cites·14 claims
- 0487US8228735B2Memory array having memory cells coupled between a programmable drain select gate and a non-programmable source select gatePUZZILLI GIUSEPPINA·Filed 2010·Granted Jul 24, 2012·16 cites·21 claims
- 0587US6798699B2Flash memory device and method of erasingMICRON TECHNOLOGY INC·Filed 2003·Granted Sep 28, 2004·37 cites·38 claims
- 0686US8853769B2Transistors and semiconductor constructionsMICRON TECHNOLOGY INC·Filed 2013·Granted Oct 7, 2014·5 cites·19 claims
- 0786US8450789B2Memory array with an air gap between memory cells and the formation thereofBICKSLER ANDREW·Filed 2010·Granted May 28, 2013·8 cites·20 claims
- 0886US7257024B2Minimizing adjacent wordline disturb in a memory deviceMICRON TECHNOLOGY INC·Filed 2006·Granted Aug 14, 2007·14 cites·17 claims
- 0986US6563741B2Flash memory device and method of erasingMICRON TECHNOLOGY INC·Filed 2001·Granted May 13, 2003·34 cites·36 claims
- 1083US12310024B2Microelectronic devices including oxide material between decks thereof, and related memory devicesLODESTAR LICENSING GROUP LLC·Filed 2024·Granted May 20, 2025·0 cites·15 claims
- 1183US11127751B2Back gates and related apparatuses, systems, and methodsMICRON TECHNOLOGY INC·Filed 2020·Granted Sep 21, 2021·2 cites·25 claims
- 1283US8619474B2Data line management in a memory deviceGODA AKIRA·Filed 2009·Granted Dec 31, 2013·12 cites·40 claims
- 1382US8390051B2Methods of forming semiconductor device structures and semiconductor device structures including a uniform pattern of conductive linesBICKSLER ANDREW·Filed 2010·Granted Mar 5, 2013·6 cites·27 claims
- 1481US2025261373A1Memory devices including oxide material between decks thereofLODESTAR LICENSING GROUP LLC·Filed 2025·Application pending·0 cites
- 1579US8716084B2Memory array with an air gap between memory cells and the formation thereofMICRON TECHNOLOGY INC·Filed 2013·Granted May 6, 2014·4 cites·24 claims
- 1679US8304309B2Select gates for memoryBICKSLER ANDREW·Filed 2009·Granted Nov 6, 2012·7 cites·12 claims
- 1775US11917825B2Microelectronic devices including an oxide material between adjacent decksMICRON TECHNOLOGY INC·Filed 2022·Granted Feb 27, 2024·0 cites·17 claims
- 1875US8729708B2Semiconductor device structures and memory devices including a uniform pattern of conductive materialMICRON TECHNOLOGY INC·Filed 2013·Granted May 20, 2014·3 cites·19 claims
- 1974US8223561B2Data line management in a memory deviceBICKSLER ANDREW·Filed 2011·Granted Jul 17, 2012·4 cites·24 claims
- 2073US11949022B2Three dimensional memoryMICRON TECHNOLOGY INC·Filed 2022·Granted Apr 2, 2024·0 cites·12 claims
- 2172US8243522B2NAND memory programming method using double vinhibit ramp for improved program disturbBICKSLER ANDREW·Filed 2009·Granted Aug 14, 2012·8 cites·16 claims
- 2272US6830975B2Method of forming field effect transistor comprising at least one of a conductive metal or metal compound in electrical connection with transistor gate semiconductor materialMICRON TECHNOLOGY INC·Filed 2002·Granted Dec 14, 2004·12 cites·32 claims
- 2371US12108601B2Back gates and related apparatuses, systems, and methodsMICRON TECHNOLOGY INC·Filed 2021·Granted Oct 1, 2024·0 cites·18 claims
- 2471US2025095746A1Dynamic step voltage level adjustmentMICRON TECHNOLOGY INC·Filed 2024·Application pending·0 cites
- 2568US11289611B2Three dimensional memoryMICRON TECHNOLOGY INC·Filed 2020·Granted Mar 29, 2022·0 cites·11 claims
- 2667US11424256B2Transistors, semiconductor constructions, and methods of forming semiconductor constructionsMICRON TECHNOLOGY INC·Filed 2019·Granted Aug 23, 2022·0 cites·36 claims
- 2766US12190957B2Dynamic step voltage level adjustmentMICRON TECHNOLOGY INC·Filed 2022·Granted Jan 7, 2025·0 cites·19 claims
- 2864US10409506B2Sense flags in a memory deviceMICRON TECHNOLOGY INC·Filed 2018·Granted Sep 10, 2019·0 cites·20 claims
- 2964US2025351362A1Channel liner for select gate threshold voltage tuningMICRON TECHNOLOGY INC·Filed 2025·Application pending·0 cites
- 3062US9135998B2Sense operation flags in a memory deviceAHMED SHAFQAT·Filed 2010·Granted Sep 15, 2015·1 cites·20 claims
- 3161US11355514B2Microelectronic devices including an oxide material between adjacent decks, electronic systems, and related methodsMICRON TECHNOLOGY INC·Filed 2019·Granted Jun 7, 2022·0 cites·26 claims
- 3260US10126967B2Sense operation flags in a memory deviceMICRON TECHNOLOGY INC·Filed 2016·Granted Nov 13, 2018·0 cites·15 claims
- 3360US9219132B2Transistors, semiconductor constructions, and methods of forming semiconductor constructionsMICRON TECHNOLOGY INC·Filed 2014·Granted Dec 22, 2015·0 cites·13 claims
- 3459US10497707B2Semiconductor constructions which include metal-containing gate portions and semiconductor-containing gate portionsMICRON TECHNOLOGY INC·Filed 2017·Granted Dec 3, 2019·0 cites·10 claims
- 3557US9613978B2Methods of forming semiconductor constructionsMICRON TECHNOLOGY INC·Filed 2015·Granted Apr 4, 2017·0 cites·7 claims
- 3656US11029861B2Sense flags in a memory deviceMICRON TECHNOLOGY INC·Filed 2019·Granted Jun 8, 2021·0 cites·20 claims
- 3756US7978511B2Data line management in a memory deviceMICRON TECHNOLOGY INC·Filed 2009·Granted Jul 12, 2011·2 cites·11 claims
- 3852US11869590B2Memory devices including gate leakage transistorsMICRON TECHNOLOGY INC·Filed 2021·Granted Jan 9, 2024·0 cites·25 claims
- 3952US10651315B2Three dimensional memoryMICRON TECHNOLOGY INC·Filed 2012·Granted May 12, 2020·0 cites·16 claims
- 4050US8519469B2Select gates for memoryBICKSLER ANDREW·Filed 2012·Granted Aug 27, 2013·0 cites·22 claims
- 4150US7358139B2Method of forming a field effect transistor including depositing and removing insulative material effective to expose transistor gate conductive material but not transistor gate semiconductor materialMICRON TECHNOLOGY INC·Filed 2006·Granted Apr 15, 2008·0 cites·10 claims
- 4250US2024185926A1Writing user data into storage memoryMICRON TECHNOLOGY INC·Filed 2023·Application pending·0 cites
- 4349US9519582B2Sense operation flags in a memory deviceMICRON TECHNOLOGY INC·Filed 2015·Granted Dec 13, 2016·0 cites·21 claims
- 4449US7271064B2Method of forming a field effect transistor using conductive masking materialMICRON TECHNOLOGY INC·Filed 2005·Granted Sep 18, 2007·0 cites·20 claims
- 4548US11665893B2Methods and apparatuses having strings of memory cells including a metal sourceMICRON TECHNOLOGY INC·Filed 2016·Granted May 30, 2023·0 cites·16 claims
- 4645US9490025B2Methods of programming memory devicesMICRON TECHNOLOGY INC·Filed 2013·Granted Nov 8, 2016·0 cites·19 claims
- 4745US8605509B2Data line management in a memory deviceBICKSLER ANDREW·Filed 2012·Granted Dec 10, 2013·0 cites·18 claims
- 4841US7112491B2Methods of forming field effect transistors including floating gate field effect transistorsMICRON TECHNOLOGY INC·Filed 2004·Granted Sep 26, 2006·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →