Inventor · disambiguated record
Meng-Jaw Cherng
Also filed as: CHERNG MENG-JAW
12 granted patents·2 pending applications·499 citations·filing 1994–2001
93Inventor score
Files withVANGUARD INT SEMICONDUCT CORP7IND TECH RES INST2WORLDWIDE SEMICONDUCTOR MFG2WORLDWIDE SEMICONDUCTOR MANUFA1
Top patents by PatentIndex Score
14 records- 0188US6022776AMethod of using silicon oxynitride to improve fabricating of DRAM contacts and landing padsWORLDWIDE SEMICONDUCTOR MANUFA·Filed 1999·Granted Feb 8, 2000·60 cites·3 claims
- 0288US5719089AMethod for etching polymer-assisted reduced small contacts for ultra large scale integration semiconductor devicesVANGUARD INT SEMICONDUCT CORP·Filed 1996·Granted Feb 17, 1998·116 cites·25 claims
- 0387US5700731AMethod for manufacturing crown-shaped storage capacitors on dynamic random access memory cellsVANGUARD INT SEMICONDUCT CORP·Filed 1995·Granted Dec 23, 1997·77 cites·18 claims
- 0479US5874359ASmall contacts for ultra large scale integration semiconductor devices without separation ground ruleIND TECH RES INST·Filed 1997·Granted Feb 23, 1999·65 cites·12 claims
- 0578US5712202AMethod for fabricating a multiple walled crown capacitor of a semiconductor deviceVANGUARD INT SEMICONDUCT CORP·Filed 1995·Granted Jan 27, 1998·62 cites·13 claims
- 0671US5543345AMethod for fabricating crown capacitors for a dram cellVANGUARD INT SEMICONDUCT CORP·Filed 1995·Granted Aug 6, 1996·34 cites·22 claims
- 0767US6174781B1Dual damascene process for capacitance fabrication of DRAMWORLDWIDE SEMICONDUCTOR MFG·Filed 1999·Granted Jan 16, 2001·34 cites·6 claims
- 0854US5491104AMethod for fabricating DRAM cells having fin-type stacked storage capacitorsIND TECH RES INST·Filed 1994·Granted Feb 13, 1996·16 cites·23 claims
- 0952US6351037B1Method for making polycide-to-polycide low contact resistance contacts for interconnections on integrated circuitsVANGUARD INT SEMICONDUCT CORP·Filed 2000·Granted Feb 26, 2002·3 cites·2 claims
- 1051US6211091B1Self-aligned eetching processWORLDWIDE SEMICONDUCTOR MFG·Filed 1999·Granted Apr 3, 2001·17 cites·18 claims
- 1144US5943599AMethod of fabricating a passivation layer for integrated circuitsVANGUARD INT SEMICONDUCT CORP·Filed 1997·Granted Aug 24, 1999·11 cites·12 claims
- 1235US6150247AMethod for making polycide-to-polycide low contact resistance contacts for interconnections on integrated circuitsVANGUARD INT SEMICONDUCT CORP·Filed 1996·Granted Nov 21, 2000·4 cites·7 claims
- 1335US2002076866A1Method for forming self-aligned contactFiled 2001·Application pending·0 cites
- 1429US2001001495A1Method for reducing contact resistanceFiled 1999·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →