Inventor · disambiguated record
William S. Brennan
Also filed as: BRENNAN WILLIAM · BRENNAN WILLIAM S
57 granted patents·1 pending application·2,250 citations·filing 1996–2012
99Inventor score
Files withADVANCED MICRO DEVICES INC53HANCE BRYON K2ADVANCED MICRO DEVCIES INC1ADVANCED MICRO SERVICES1NICKEL ALEXANDER H1
Top patents by PatentIndex Score
58 records- 0199US6955928B1Closed loop residual gas analyzer process control techniqueADVANCED MICRO DEVICES INC·Filed 2001·Granted Oct 18, 2005·405 cites·9 claims
- 0298US5850105ASubstantially planar semiconductor topography using dielectrics and chemical mechanical polishADVANCED MICRO DEVICES INC·Filed 1997·Granted Dec 15, 1998·278 cites·10 claims
- 0394US5953626ADissolvable dielectric methodADVANCED MICRO DEVICES INC·Filed 1996·Granted Sep 14, 1999·160 cites·12 claims
- 0493US5759913AMethod of formation of an air gap within a semiconductor dielectric by solvent desorptionADVANCED MICRO DEVICES INC·Filed 1996·Granted Jun 2, 1998·148 cites·17 claims
- 0592US5827776AMethod of making an integrated circuit which uses an etch stop for producing staggered interconnect linesADVANCED MICRO DEVICES INC·Filed 1997·Granted Oct 27, 1998·139 cites·14 claims
- 0688US5792706AInterlevel dielectric with air gaps to reduce permitivityADVANCED MICRO DEVICES INC·Filed 1996·Granted Aug 11, 1998·96 cites·20 claims
- 0787US5783864AMultilevel interconnect structure of an integrated circuit having air gaps and pillars separating levels of interconnectADVANCED MICRO DEVICES INC·Filed 1996·Granted Jul 21, 1998·78 cites·5 claims
- 0884US6555479B1Method for forming openings for conductive interconnectsADVANCED MICRO DEVICES INC·Filed 2001·Granted Apr 29, 2003·31 cites·48 claims
- 0984US5814555AInterlevel dielectric with air gaps to lessen capacitive couplingADVANCED MICRO DEVICES INC·Filed 1996·Granted Sep 29, 1998·63 cites·11 claims
- 1083US5926713AMethod for achieving global planarization by forming minimum mesas in large field areasADVANCED MICRO DEVICES INC·Filed 1997·Granted Jul 20, 1999·69 cites·26 claims
- 1181US6208015B1Interlevel dielectric with air gaps to lessen capacitive couplingADVANCED MICRO DEVICES INC·Filed 1998·Granted Mar 27, 2001·51 cites·21 claims
- 1281US5899727AMethod of making a semiconductor isolation region bounded by a trench and covered with an oxide to improve planarizationADVANCED MICRO DEVICES INC·Filed 1996·Granted May 4, 1999·56 cites·18 claims
- 1378US5998293AMultilevel interconnect structure of an integrated circuit having air gaps and pillars separating levels of interconnectADVANCED MICRO DEVCIES INC·Filed 1998·Granted Dec 7, 1999·54 cites·11 claims
- 1477US6800494B1Method and apparatus for controlling copper barrier/seed deposition processesADVANCED MICRO DEVICES INC·Filed 2002·Granted Oct 5, 2004·21 cites·63 claims
- 1576US6489240B1Method for forming copper interconnectsADVANCED MICRO DEVICES INC·Filed 2001·Granted Dec 3, 2002·23 cites·14 claims
- 1676US6376330B1Dielectric having an air gap formed between closely spaced interconnect linesADVANCED MICRO DEVICES INC·Filed 1996·Granted Apr 23, 2002·48 cites·13 claims
- 1775US6809032B1Method and apparatus for detecting the endpoint of a chemical-mechanical polishing operation using optical techniquesADVANCED MICRO DEVICES INC·Filed 2002·Granted Oct 26, 2004·18 cites·15 claims
- 1874US6614064B1Transistor having a gate stick comprised of a metal, and a method of making sameADVANCED MICRO DEVICES INC·Filed 2002·Granted Sep 2, 2003·19 cites·20 claims
- 1973US6091149ADissolvable dielectric method and structureADVANCED MICRO DEVICES INC·Filed 1999·Granted Jul 18, 2000·37 cites·6 claims
- 2072US5926717AMethod of making an integrated circuit with oxidizable trench linerADVANCED MICRO DEVICES INC·Filed 1996·Granted Jul 20, 1999·41 cites·25 claims
- 2171US5846876AIntegrated circuit which uses a damascene process for producing staggered interconnect linesADVANCED MICRO DEVICES INC·Filed 1996·Granted Dec 8, 1998·35 cites·9 claims
- 2269US6413846B1Contact each methodology and integration schemeADVANCED MICRO DEVICES INC·Filed 2000·Granted Jul 2, 2002·15 cites·36 claims
- 2364US5783481ASemiconductor interlevel dielectric having a polymide for producing air gapsADVANCED MICRO DEVICES INC·Filed 1996·Granted Jul 21, 1998·29 cites·17 claims
- 2462US6514858B1Test structure for providing depth of polish feedbackADVANCED MICRO DEVICES INC·Filed 2001·Granted Feb 4, 2003·8 cites·16 claims
- 2561US6395100B1Method of improving vacuum quality in semiconductor processing chambersADVANCED MICRO DEVICES INC·Filed 2000·Granted May 28, 2002·8 cites·23 claims
- 2661US5767012AMethod of forming a recessed interconnect structureADVANCED MICRO DEVICES INC·Filed 1996·Granted Jun 16, 1998·22 cites·10 claims
- 2761US5717242AIntegrated circuit having local interconnect for reduing signal cross coupled noiseADVANCED MICRO DEVICES INC·Filed 1996·Granted Feb 10, 1998·22 cites·20 claims
- 2858US6255215B1Semiconductor device having silicide layers formed using a collimated metal layerADVANCED MICRO SERVICES·Filed 1998·Granted Jul 3, 2001·19 cites·23 claims
- 2958US5968843AMethod of planarizing a semiconductor topography using multiple polish padsADVANCED MICRO DEVICES INC·Filed 1996·Granted Oct 19, 1999·21 cites·7 claims
- 3057US6067855AApparatus and method for measuring liquid level in a sealed containerADVANCED MICRO DEVICES INC·Filed 1999·Granted May 30, 2000·21 cites·32 claims
- 3155US5924008AIntegrated circuit having local interconnect for reducing signal cross coupled noiseADVANCED MICRO DEVICES INC·Filed 1997·Granted Jul 13, 1999·17 cites·4 claims
- 3254US8171627B2Method of forming an electronic deviceHANCE BRYON K·Filed 2007·Granted May 8, 2012·1 cites·16 claims
- 3352US6150721AIntegrated circuit which uses a damascene process for producing staggered interconnect linesADVANCED MICRO DEVICES INC·Filed 1998·Granted Nov 21, 2000·15 cites·21 claims
- 3452US6060389ASemiconductor fabrication employing a conformal layer of CVD deposited TiN at the periphery of an interconnectADVANCED MICRO DEVICES INC·Filed 1998·Granted May 9, 2000·17 cites·20 claims
- 3551US6211072B1CVD Tin Barrier process with improved contact resistanceADVANCED MICRO DEVICES INC·Filed 1999·Granted Apr 3, 2001·15 cites·20 claims
- 3651US5854131AIntegrated circuit having horizontally and vertically offset interconnect linesADVANCED MICRO DEVICES INC·Filed 1996·Granted Dec 29, 1998·14 cites·10 claims
- 3750US5733798AMask generation technique for producing an integrated circuit with optimal polysilicon interconnect layout for achieving global planarizationADVANCED MICRO DEVICES INC·Filed 1996·Granted Mar 31, 1998·13 cites·13 claims
- 3848US6326298B1Substantially planar semiconductor topography using dielectrics and chemical mechanical polishADVANCED MICRO DEVICES INC·Filed 2000·Granted Dec 4, 2001·2 cites·9 claims
- 3947US5830773AMethod for forming semiconductor field region dielectrics having globally planarized upper surfacesADVANCED MICRO DEVICES INC·Filed 1996·Granted Nov 3, 1998·13 cites·16 claims
- 4046US6031289AIntegrated circuit which uses a recessed local conductor for producing staggered interconnect linesADVANCED MICRO DEVICES INC·Filed 1998·Granted Feb 29, 2000·11 cites·12 claims
- 4146US5851913AMethod for forming a multilevel interconnect structure of an integrated circuit by a single via etch and single fill processADVANCED MICRO DEVICES INC·Filed 1996·Granted Dec 22, 1998·13 cites·20 claims
- 4245US6153833AIntegrated circuit having interconnect lines separated by a dielectric having a capping layerADVANCED MICRO DEVICES INC·Filed 1998·Granted Nov 28, 2000·10 cites·20 claims
- 4345US6127264AIntegrated circuit having conductors of enhanced cross-sectional areaADVANCED MICRO DEVICES INC·Filed 1998·Granted Oct 3, 2000·10 cites·8 claims
- 4445US6090703AMethod of forming an integrated circuit having conductors of enhanced cross-sectional area with etch stop barrier layerADVANCED MICRO DEVICES INC·Filed 1998·Granted Jul 18, 2000·10 cites·10 claims
- 4544US8643083B2Electronic devices with ultraviolet blocking layersHANCE BRYON K·Filed 2012·Granted Feb 4, 2014·0 cites·20 claims
- 4644US5766803AMask generation technique for producing an integrated circuit with optimal metal interconnect layout for achieving global planarizationADVANCED MICRO DEVICES INC·Filed 1996·Granted Jun 16, 1998·9 cites·6 claims
- 4744US2007105247A1Method And Apparatus For Detecting The Endpoint Of A Chemical-Mechanical Polishing OperationADVANCED MICRO DEVICES INC·Filed 2006·Application pending·0 cites
- 4842US6191032B1Thin titanium film as self-regulating filter for silicon migration into aluminum metal linesADVANCED MICRO DEVICES INC·Filed 1997·Granted Feb 20, 2001·12 cites·24 claims
- 4942US5847462AIntegrated circuit having conductors of enhanced cross-sectional area with etch stop barrier layerADVANCED MICRO DEVICES INC·Filed 1996·Granted Dec 8, 1998·8 cites·15 claims
- 5040US8202810B2Low-H plasma treatment with N2 anneal for electronic memory devicesNICKEL ALEXANDER H·Filed 2008·Granted Jun 19, 2012·0 cites·9 claims
Showing the top 50 of 58 patent records by PatentIndex Score.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →