Inventor · disambiguated record
Theodore D. Moustakas
Also filed as: MOUSTAKAS THEODORE · MOUSTAKAS THEODORE D
39 granted patents·2 pending applications·1,048 citations·filing 1979–2020
98Inventor score
Files withUNIV BOSTON23EXXON RESEARCH ENGINEERING CO8MOUSTAKAS THEODORE D3BOSTON MICROSYSTEMS INC2GUNTER LIBERTY L2
Top patents by PatentIndex Score
41 records- 0198US9318652B1Ultraviolet light emitting diode structures and methods of manufacturing the sameUNIV BOSTON·Filed 2015·Granted Apr 19, 2016·24 cites·24 claims
- 0296US8723189B1Ultraviolet light emitting diode structures and methods of manufacturing the sameUNIV BOSTON·Filed 2013·Granted May 13, 2014·16 cites·20 claims
- 0395US5686738AHighly insulating monocrystalline gallium nitride thin filmsUNIV BOSTON·Filed 1995·Granted Nov 11, 1997·151 cites·21 claims
- 0493US8035113B2Optical devices featuring textured semiconductor layersUNIV BOSTON·Filed 2006·Granted Oct 11, 2011·24 cites·36 claims
- 0593US5633192AMethod for epitaxially growing gallium nitride layersUNIV BOSTON·Filed 1995·Granted May 27, 1997·138 cites·10 claims
- 0691US8987755B1Ultraviolet light emitting diode structures and methods of manufacturing the sameUNIV BOSTON·Filed 2014·Granted Mar 24, 2015·6 cites·20 claims
- 0790US8237175B2Optical devices featuring textured semiconductor layersMOUSTAKAS THEODORE D·Filed 2011·Granted Aug 7, 2012·9 cites·4 claims
- 0889US10535801B2High efficiency ultraviolet light emitting diode with band structure potential fluctuationsUNIV BOSTON·Filed 2015·Granted Jan 14, 2020·5 cites·6 claims
- 0989US7777241B2Optical devices featuring textured semiconductor layersUNIV BOSTON·Filed 2005·Granted Aug 17, 2010·18 cites·72 claims
- 1089US5847397APhotodetectors using III-V nitridesUNIV BOSTON·Filed 1996·Granted Dec 8, 1998·82 cites·14 claims
- 1188US9780254B1Ultraviolet light emitting diode structures and methods of manufacturing the sameUNIV BOSTON·Filed 2015·Granted Oct 3, 2017·3 cites·13 claims
- 1288US9627580B2High efficiency ultraviolet light emitting diode with band structure potential fluctuationsUNIV BOSTON·Filed 2012·Granted Apr 18, 2017·6 cites·19 claims
- 1388US6275137B1Semiconductor piezoresistorBOSTON MICROSYSTEMS INC·Filed 2000·Granted Aug 14, 2001·46 cites·30 claims
- 1488US5677538APhotodetectors using III-V nitridesUNIV BOSTON·Filed 1995·Granted Oct 14, 1997·84 cites·30 claims
- 1587US5385862AMethod for the preparation and doping of highly insulating monocrystalline gallium nitride thin filmsUNIV BOSTON·Filed 1993·Granted Jan 31, 1995·81 cites·27 claims
- 1686US4251289AGradient doping in amorphous siliconEXXON RESEARCH ENGINEERING CO·Filed 1979·Granted Feb 17, 1981·50 cites·9 claims
- 1785US8592800B2Optical devices featuring nonpolar textured semiconductor layersMOUSTAKAS THEODORE D·Filed 2009·Granted Nov 26, 2013·17 cites·18 claims
- 1884US6441716B1Semiconductor piezoresistorBOSTON MICROSYSTEMS INC·Filed 2001·Granted Aug 27, 2002·32 cites·24 claims
- 1980US10593830B1Ultraviolet light emitting diode structures and methods of manufacturing the sameUNIV BOSTON·Filed 2017·Granted Mar 17, 2020·1 cites·8 claims
- 2079US4285762APlasma etching of amorphous silicon (SE-35)EXXON RESEARCH ENGINEERING CO·Filed 1979·Granted Aug 25, 1981·31 cites·10 claims
- 2177US8247843B2GaN-based permeable base transistor and method of fabricationGUNTER LIBERTY L·Filed 2008·Granted Aug 21, 2012·5 cites·6 claims
- 2276US5725674ADevice and method for epitaxially growing gallium nitride layersUNIV BOSTON·Filed 1995·Granted Mar 10, 1998·44 cites·11 claims
- 2374US11502220B1Ultraviolet light emitting diode structures and methods of manufacturing the sameUNIV BOSTON·Filed 2020·Granted Nov 15, 2022·0 cites·6 claims
- 2474US4528082AMethod for sputtering a PIN amorphous silicon semi-conductor device having partially crystallized P and N-layersEXXON RESEARCH ENGINEERING CO·Filed 1983·Granted Jul 9, 1985·39 cites·26 claims
- 2571US7663157B2Semiconductor device having group III nitride buffer layer and growth layersUNIV BOSTON·Filed 2007·Granted Feb 16, 2010·2 cites·11 claims
- 2668US8257987B2Planarization of GaN by photoresist technique using an inductively coupled plasmaMOUSTAKAS THEODORE D·Filed 2007·Granted Sep 4, 2012·3 cites·16 claims
- 2768US6123768AMethod for the preparation and doping of highly insulating monocrystalline gallium nitride thin filmsUNIV BOSTON·Filed 1996·Granted Sep 26, 2000·27 cites·12 claims
- 2866US7235819B2Semiconductor device having group III nitride buffer layer and growth layersUNIV BOSTON·Filed 2003·Granted Jun 26, 2007·7 cites·8 claims
- 2965US11646395B2High efficiency ultraviolet light emitting diode with electron tunnellingUNIV BOSTON·Filed 2019·Granted May 9, 2023·0 cites·10 claims
- 3063US10361343B2Ultraviolet light emitting diodesUNIV BOSTON·Filed 2015·Granted Jul 23, 2019·2 cites·19 claims
- 3161US6953703B2Method of making a semiconductor device with exposure of sapphire substrate to activated nitrogenUNIV BOSTON·Filed 2003·Granted Oct 11, 2005·5 cites·17 claims
- 3261US5296119ADefect-induced control of the structure of boron nitrideUNIV BOSTON·Filed 1992·Granted Mar 22, 1994·20 cites·12 claims
- 3360US7413958B2GaN-based permeable base transistor and method of fabricationBAE SYSTEMS INFORMATION·Filed 2004·Granted Aug 19, 2008·6 cites·16 claims
- 3456US4508609AMethod for sputtering a PIN microcrystalline/amorphous silicon semiconductor device with the P and N-layers sputtered from boron and phosphorous heavily doped targetsEXXON RESEARCH ENGINEERING CO·Filed 1983·Granted Apr 2, 1985·19 cites·25 claims
- 3555US4417092ASputtered pin amorphous silicon semi-conductor device and method thereforEXXON RESEARCH ENGINEERING CO·Filed 1981·Granted Nov 22, 1983·17 cites·18 claims
- 3653USRE42955EGaN-based permeable base transistor and method of fabricationGUNTER LIBERTY L·Filed 2004·Granted Nov 22, 2011·4 cites·16 claims
- 3746US4533450AControl of the hydrogen bonding in reactively sputtered amorphous siliconEXXON RESEARCH ENGINEERING CO·Filed 1984·Granted Aug 6, 1985·9 cites·9 claims
- 3843US4407710AHybrid method of making an amorphous silicon P-I-N semiconductor deviceEXXON RESEARCH ENGINEERING CO·Filed 1981·Granted Oct 4, 1983·9 cites·19 claims
- 3939US2004108505A1Method for p-type doping wide band gap oxide semiconductorsFiled 2003·Application pending·0 cites
- 4035US2004104384A1Growth of high temperature, high power, high speed electronicsFiled 2003·Application pending·0 cites
- 4132US4739383AOptical detector and amplifier based on tandem semiconductor devicesEXXON RESEARCH ENGINEERING CO·Filed 1986·Granted Apr 19, 1988·6 cites·11 claims
Join the waitlist — get patent alerts
Get an alert when Theodore D. Moustakas files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →