Inventor · disambiguated record
Edward Semenas
Also filed as: SEMENAS EDWARD
10 granted patents·3 pending applications·119 citations·filing 2005–2021
88Inventor score
Top patents by PatentIndex Score
13 records- 0194US7767022B1Method of annealing a sublimation grown crystalII VI INC·Filed 2007·Granted Aug 3, 2010·53 cites·20 claims
- 0293US10294584B2SiC single crystal sublimation growth method and apparatusGUPTA AVINASH K·Filed 2010·Granted May 21, 2019·13 cites·14 claims
- 0393US8216369B2System for forming SiC crystals having spatially uniform doping impuritiesGUPTA AVINASH K·Filed 2009·Granted Jul 10, 2012·18 cites·9 claims
- 0491US7608524B2Method of and system for forming SiC crystals having spatially uniform doping impuritiesII VI INC·Filed 2006·Granted Oct 27, 2009·22 cites·9 claims
- 0583US8313720B2Guided diameter SiC sublimation growth with multi-layer growth guideZWIEBACK ILYA·Filed 2008·Granted Nov 20, 2012·5 cites·12 claims
- 0679US7547360B2Reduction of carbon inclusions in sublimation grown SiC single crystalsII VI INC·Filed 2007·Granted Jun 16, 2009·3 cites·13 claims
- 0776US11761117B2SiC single crystal sublimation growth apparatusII VI DELAWARE INC·Filed 2021·Granted Sep 19, 2023·0 cites·8 claims
- 0876US11149359B2SiC single crystal sublimation growth apparatusII VI DELAWARE INC·Filed 2019·Granted Oct 19, 2021·0 cites·10 claims
- 0975US8449671B2Fabrication of SiC substrates with low warp and bowWU PING·Filed 2008·Granted May 28, 2013·3 cites·20 claims
- 1070US8871025B2SiC single crystals with reduced dislocation density grown by step-wise periodic perturbation techniqueGUPTA AVINASH·Filed 2007·Granted Oct 28, 2014·2 cites·16 claims
- 1162US2011303884A1SiC Crystals Having Spatially Uniform Doping ImpuritiesGUPTA AVINASH K·Filed 2011·Application pending·0 cites
- 1241US2012285370A1Sublimation growth of sic single crystalsGUPTA AVINASH K·Filed 2010·Application pending·0 cites
- 1340US2008190355A1Low-Doped Semi-Insulating Sic Crystals and MethodII VI INC·Filed 2005·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →