Inventor · disambiguated record
Ejaz Ul Haq
Also filed as: HAQ EJAZ · HAQ EJAZ U · HAQ EJAZ UL
21 granted patents·1 pending application·1,279 citations·filing 1989–2005
97Inventor score
Top patents by PatentIndex Score
22 records- 0198US6151648AHigh speed bus system and method for using voltage and timing oscillating references for signal detectionJAZIO INC·Filed 1998·Granted Nov 21, 2000·148 cites·25 claims
- 0294US6513080B1High speed bus system and method for using voltage and timing oscillating references for signal detectionJAZIO INC·Filed 2000·Granted Jan 28, 2003·108 cites·26 claims
- 0394US6327205B1Signal latching of high bandwidth DRAM arrays when skew between different components is higher than signal rateJAZIO INC·Filed 2000·Granted Dec 4, 2001·106 cites·30 claims
- 0493US6160423AHigh speed source synchronous signaling for interfacing VLSI CMOS circuits to transmission linesJAZIO INC·Filed 1998·Granted Dec 12, 2000·193 cites·37 claims
- 0591US5220518AIntegrated circuit memory with non-binary array configurationVLSI TECHNOLOGY INC·Filed 1991·Granted Jun 15, 1993·88 cites·4 claims
- 0690US5732018ASelf-contained reprogramming nonvolatile integrated circuit memory devices and methodsSAMSUNG ELECTRONICS CO LTD·Filed 1996·Granted Mar 24, 1998·94 cites·14 claims
- 0790US5343438ASemiconductor memory device having a plurality of row address strobe signalsSAMSUNG ELECTRONICS CO LTD·Filed 1993·Granted Aug 30, 1994·78 cites·6 claims
- 0888US6255859B1High speed source synchronous signaling for interfacing VLSI CMOS circuits to transmission linesJAZIO INC·Filed 1999·Granted Jul 3, 2001·115 cites·10 claims
- 0984US7123660B2Method and system for deskewing parallel bus channels to increase data transfer ratesJAZIO INC·Filed 2002·Granted Oct 17, 2006·45 cites·11 claims
- 1084US5446697ASemiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 1993·Granted Aug 29, 1995·52 cites·21 claims
- 1181US5889719ASemiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 1995·Granted Mar 30, 1999·37 cites·6 claims
- 1278US5737258ANonvolatile semiconductor memory which is connectable to a DRAM busSAMSUNG ELECTRONICS CO LTD·Filed 1996·Granted Apr 7, 1998·44 cites·28 claims
- 1378US5654930ASemiconductor memory device having low power self refresh and burn-in functionsSAMSUNG ELECTRONICS CO LTD·Filed 1996·Granted Aug 5, 1997·37 cites·16 claims
- 1477US7190192B2High speed source synchronous signaling for interfacing VLSI CMOS circuits to transmission linesJAZIO INC·Filed 2005·Granted Mar 13, 2007·4 cites·7 claims
- 1576US5636171ASemiconductor memory device having low power self refresh and burn-in functionsSAMSUNG ELECTRONICS CO LTD·Filed 1995·Granted Jun 3, 1997·35 cites·4 claims
- 1671US6430606B1High speed signaling for interfacing VLSI CMOS circuitsJAZIO INC·Filed 1999·Granted Aug 6, 2002·64 cites·23 claims
- 1757US7009428B2High speed source synchronous signaling for interfacing VLSI CMOS circuits to transmission linesJAZIO INC·Filed 2004·Granted Mar 7, 2006·2 cites·19 claims
- 1856US5610869ASemiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 1995·Granted Mar 11, 1997·17 cites·8 claims
- 1952US4973865AAuto-delay gain circuitVLSI TECHNOLOGY INC·Filed 1989·Granted Nov 27, 1990·9 cites·9 claims
- 2051US6812767B2High speed source synchronous signaling for interfacing VLSI CMOS circuits to transmission linesJAZIO INC·Filed 2001·Granted Nov 2, 2004·3 cites·10 claims
- 2144US7126383B2High speed source synchronous signaling for interfacing VLSI CMOS circuits to transmission linesJAZIO INC·Filed 2005·Granted Oct 24, 2006·0 cites·8 claims
- 2239US2006126745A1System and method for increasing signal strength at a receiver in transmission lines with high attenuationHAQ EJAZ U·Filed 2002·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →