Inventor · disambiguated record
Bentley J. Palmer
Also filed as: PALMER BENTLEY · PALMER BENTLEY J
17 granted patents·7 pending applications·886 citations·filing 1994–2013
95Inventor score
Files withSCHLUMBERGER TECHNOLOGY CORP4TOKYO ELECTRON LTD4DUPONT AIR PROD NANOMATERIALS3SHI XIAOBO3NOVELLUS SYSTEMS INC2
Top patents by PatentIndex Score
24 records- 0196US6599863B1Fracturing process and compositionSCHLUMBERGER TECHNOLOGY CORP·Filed 1999·Granted Jul 29, 2003·421 cites·29 claims
- 0293US5534312AMethod for directly depositing metal containing patterned filmsUNIV FRASER SIMON·Filed 1994·Granted Jul 9, 1996·172 cites·32 claims
- 0391US6924253B2Scale removalFiled 2001·Granted Aug 2, 2005·37 cites·7 claims
- 0489US6802955B2Method and apparatus for the electrochemical deposition and planarization of a material on a workpiece surfaceSPEEDFAM IPEC CORP·Filed 2002·Granted Oct 12, 2004·43 cites·31 claims
- 0585US7678605B2Method for chemical mechanical planarization of chalcogenide materialsDUPONT AIR PROD NANOMATERIALS·Filed 2008·Granted Mar 16, 2010·10 cites·18 claims
- 0683US6608005B2Wellbore fluids and their applicationSCHLUMBERGER TECHNOLOGY CORP·Filed 2001·Granted Aug 19, 2003·34 cites·33 claims
- 0775US6419019B1Method to remove particulate matter from a wellbore using translocating fibers and/or plateletsSCHLUMBERGER TECHNOLOGY CORP·Filed 1998·Granted Jul 16, 2002·65 cites·18 claims
- 0874US7064070B2Removal of CMP and post-CMP residue from semiconductors using supercritical carbon dioxide processTOKYO ELECTRON LTD·Filed 2003·Granted Jun 20, 2006·17 cites·20 claims
- 0973US6085844AMethod for removal of undesired fluids from a wellboreSCHLUMBERGER TECHNOLOGY CORP·Filed 1998·Granted Jul 11, 2000·60 cites·35 claims
- 1069US7297239B2Method and apparatus for the electrochemical deposition and planarization of a material on a workpiece surfaceNOVELLUS SYSTEMS INC·Filed 2004·Granted Nov 20, 2007·11 cites·25 claims
- 1167US8841216B2Method and composition for chemical mechanical planarization of a metalAIR PROD & CHEM·Filed 2013·Granted Sep 23, 2014·2 cites·9 claims
- 1267US7250374B2System and method for processing a substrate using supercritical carbon dioxide processingTOKYO ELECTRON LTD·Filed 2004·Granted Jul 31, 2007·11 cites·24 claims
- 1361US8252688B2Method and composition for chemical mechanical planarization of a metal or a metal alloySHI XIAOBO·Filed 2009·Granted Aug 28, 2012·1 cites·15 claims
- 1458US8414789B2Method and composition for chemical mechanical planarization of a metalSHI XIAOBO·Filed 2009·Granted Apr 9, 2013·1 cites·8 claims
- 1547US8697577B2Method and composition for chemical mechanical planarization of a metal or a metal alloySHI XIAOBO·Filed 2012·Granted Apr 15, 2014·0 cites·8 claims
- 1647US8506661B2Polishing slurry for copper filmsSAWAYDA REBECCA A·Filed 2008·Granted Aug 13, 2013·0 cites·27 claims
- 1744US7307019B2Method for supercritical carbon dioxide processing of fluoro-carbon filmsTOKYO ELECTRON LTD·Filed 2004·Granted Dec 11, 2007·1 cites·23 claims
- 1844US2010081279A1Method for Forming Through-base Wafer Vias in Fabrication of Stacked DevicesDUPONT AIR PROD NANOMATERIALS·Filed 2008·Application pending·0 cites
- 1944US2009061630A1Method for Chemical Mechanical Planarization of A Metal-containing SubstrateDUPONT AIR PROD NANOMATERIALS·Filed 2008·Application pending·0 cites
- 2042US2006255016A1Method for polishing copper on a workpiece surfaceNOVELLUS SYSTEMS INC·Filed 2006·Application pending·0 cites
- 2138US2006102208A1System for removing a residue from a substrate using supercritical carbon dioxide processingTOKYO ELECTRON LTD·Filed 2004·Application pending·0 cites
- 2238US2005121969A1Lubricant for wafer polishing using a fixed abrasive padFiled 2003·Application pending·0 cites
- 2337US2003134576A1Method for polishing copper on a workpiece surfaceFiled 2002·Application pending·0 cites
- 2436US2006102204A1Method for removing a residue from a substrate using supercritical carbon dioxide processingINTEL CORP·Filed 2004·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →