Inventor · disambiguated record
Robert D. Clark
Also filed as: CLARK ROBERT · CLARK ROBERT A · CLARK ROBERT D · CLARK ROBERT DANIEL
102 granted patents·36 pending applications·2,002 citations·filing 1977–2025
99Inventor score
Top patents by PatentIndex Score
138 records- 0199US10522343B2Method of enhancing high-k film nucleation rate and electrical mobility in a semiconductor device by microwave plasma treatmentTOKYO ELECTRON LTD·Filed 2015·Granted Dec 31, 2019·40 cites·20 claims
- 0299US7767262B2Nitrogen profile engineering in nitrided high dielectric constant filmsTOKYO ELECTRON LTD·Filed 2006·Granted Aug 3, 2010·519 cites·22 claims
- 0399US7651961B2Method for forming strained silicon nitride films and a device containing such filmsTOKYO ELECTRON LTD·Filed 2007·Granted Jan 26, 2010·528 cites·27 claims
- 0497US11456212B2Platform and method of operating for integrated end-to-end fully self-aligned interconnect processTOKYO ELECTRON LTD·Filed 2020·Granted Sep 27, 2022·4 cites·7 claims
- 0597US8580664B2Method for forming ultra-shallow boron doping regions by solid phase diffusionCLARK ROBERT D·Filed 2011·Granted Nov 12, 2013·43 cites·20 claims
- 0696US10916472B2Self-aware and correcting heterogenous platform incorporating integrated semiconductor processing modules and method for using sameTOKYO ELECTRON LTD·Filed 2019·Granted Feb 9, 2021·14 cites·17 claims
- 0796US7772073B2Semiconductor device containing a buried threshold voltage adjustment layer and method of formingTOKYO ELECTRON LTD·Filed 2007·Granted Aug 10, 2010·35 cites·3 claims
- 0895US11101173B2Self-aware and correcting heterogenous platform incorporating integrated semiconductor processing modules and method for using sameTOKYO ELECTRON LTD·Filed 2019·Granted Aug 24, 2021·11 cites·27 claims
- 0995US8481341B2Epitaxial film growth in retrograde wells for semiconductor devicesCLARK ROBERT D·Filed 2012·Granted Jul 9, 2013·24 cites·20 claims
- 1095US7939455B2Method for forming strained silicon nitride films and a device containing such filmsTOKYO ELECTRON LTD·Filed 2006·Granted May 10, 2011·33 cites·18 claims
- 1194US4679000ABidirectional current time integration deviceCLARK ROBERT·Filed 1985·Granted Jul 7, 1987·238 cites·9 claims
- 1293US10727057B2Platform and method of operating for integrated end-to-end self-aligned multi-patterning processTOKYO ELECTRON LTD·Filed 2019·Granted Jul 28, 2020·10 cites·20 claims
- 1392US10861744B2Platform and method of operating for integrated end-to-end CMP-less interconnect processTOKYO ELECTRON LTD·Filed 2019·Granted Dec 8, 2020·7 cites·18 claims
- 1492US8569158B2Method for forming ultra-shallow doping regions by solid phase diffusionCLARK ROBERT D·Filed 2011·Granted Oct 29, 2013·12 cites·6 claims
- 1592US8003503B1Method of integrating stress into a gate stackTOKYO ELECTRON LTD·Filed 2010·Granted Aug 23, 2011·14 cites·25 claims
- 1691US10784175B2Platform and method of operating for integrated end-to-end gate contact processTOKYO ELECTRON LTD·Filed 2019·Granted Sep 22, 2020·6 cites·23 claims
- 1791US10283369B2Atomic layer etching using a boron-containing gas and hydrogen fluoride gasTOKYO ELECTRON LTD·Filed 2017·Granted May 7, 2019·5 cites·12 claims
- 1891US8865581B2Hybrid gate last integration scheme for multi-layer high-k gate stacksTOKYO ELECTRON LTD·Filed 2012·Granted Oct 21, 2014·13 cites·21 claims
- 1991US8313994B2Method for forming a high-K gate stack with reduced effective oxide thicknessCLARK ROBERT D·Filed 2010·Granted Nov 20, 2012·13 cites·20 claims
- 2091US7833913B2Method of forming crystallographically stabilized doped hafnium zirconium based filmsTOKYO ELECTRON LTD·Filed 2007·Granted Nov 16, 2010·12 cites·24 claims
- 2191US7531452B2Strained metal silicon nitride films and method of formingTOKYO ELECTRON LTD·Filed 2007·Granted May 12, 2009·20 cites·21 claims
- 2290US7494937B2Strained metal silicon nitride films and method of formingTOKYO ELECTRON LTD·Filed 2007·Granted Feb 24, 2009·19 cites·24 claims
- 2390US7165275B2Toilet mounting assemblyCLARK ROBERT D·Filed 2005·Granted Jan 23, 2007·14 cites·7 claims
- 2489US11424236B2Facilitating alignment of stacked chipletsTOKYO ELECTRON LTD·Filed 2020·Granted Aug 23, 2022·2 cites·20 claims
- 2588US11024535B2Method for filling recessed features in semiconductor devices with a low-resistivity metalTOKYO ELECTRON LTD·Filed 2019·Granted Jun 1, 2021·4 cites·19 claims
- 2688US7713868B2Strained metal nitride films and method of formingTOKYO ELECTRON LTD·Filed 2007·Granted May 11, 2010·16 cites·18 claims
- 2787US8962078B2Method for depositing dielectric filmsCLARK ROBERT D·Filed 2012·Granted Feb 24, 2015·3 cites·19 claims
- 2887US7790628B2Method of forming high dielectric constant films using a plurality of oxidation sourcesTOKYO ELECTRON LTD·Filed 2007·Granted Sep 7, 2010·12 cites·17 claims
- 2986US11764113B2Method of 3D logic fabrication to sequentially decrease processing temperature and maintain material thermal thresholdsTOKYO ELECTRON LTD·Filed 2021·Granted Sep 19, 2023·1 cites·20 claims
- 3086US8877620B2Method for forming ultra-shallow doping regions by solid phase diffusionCLARK ROBERT D·Filed 2013·Granted Nov 4, 2014·6 cites·2 claims
- 3186US7759746B2Semiconductor device with gate dielectric containing aluminum and mixed rare earth elementsTOKYO ELECTRON LTD·Filed 2006·Granted Jul 20, 2010·10 cites·6 claims
- 3285US6185506B1Method for selecting an optimally diverse library of small molecules based on validated molecular structural descriptorsTRIPOS INC·Filed 1996·Granted Feb 6, 2001·79 cites·58 claims
- 3384US10014213B2Selective bottom-up metal feature filling for interconnectsTOKYO ELECTRON LTD·Filed 2016·Granted Jul 3, 2018·4 cites·16 claims
- 3484US7755128B2Semiconductor device containing crystallographically stabilized doped hafnium zirconium based materialsTOKYO ELECTRON LTD·Filed 2007·Granted Jul 13, 2010·11 cites·17 claims
- 3583US10886173B2Platform and method of operating for integrated end-to-end fully self-aligned interconnect processTOKYO ELECTRON LTD·Filed 2019·Granted Jan 5, 2021·2 cites·16 claims
- 3683US9899224B2Method of controlling solid phase diffusion of boron dopants to form ultra-shallow doping regionsTOKYO ELECTRON LTD·Filed 2016·Granted Feb 20, 2018·4 cites·20 claims
- 3782US7741202B2Method of controlling interface layer thickness in high dielectric constant film structures including growing and annealing a chemical oxide layerTOKYO ELECTRON LTD·Filed 2008·Granted Jun 22, 2010·7 cites·12 claims
- 3882US7261118B2Method and vessel for the delivery of precursor materialsAIR PROD & CHEM·Filed 2004·Granted Aug 28, 2007·29 cites·35 claims
- 3981US9012316B2Method for forming ultra-shallow boron doping regions by solid phase diffusionTOKYO ELECTRON LTD·Filed 2013·Granted Apr 21, 2015·3 cites·20 claims
- 4080US10964608B2Platform and method of operating for integrated end-to-end gate contact processTOKYO ELECTRON LTD·Filed 2019·Granted Mar 30, 2021·2 cites·19 claims
- 4179US8440520B2Diffused cap layers for modifying high-k gate dielectrics and interface layersCLARK ROBERT D·Filed 2011·Granted May 14, 2013·5 cites·20 claims
- 4278US9837304B2Sidewall protection scheme for contact formationTOKYO ELECTRON LTD·Filed 2016·Granted Dec 5, 2017·2 cites·20 claims
- 4378US8865538B2Method of integrating buried threshold voltage adjustment layers for CMOS processingCLARK ROBERT D·Filed 2012·Granted Oct 21, 2014·5 cites·9 claims
- 4478US4140903APrecision speed control for optical scannersXEROX CORP·Filed 1977·Granted Feb 20, 1979·22 cites·9 claims
- 4578US2025343187A1Bonding layer and process of makingTOKYO ELECTRON LTD·Filed 2025·Application pending·0 cites
- 4677US7816737B2Semiconductor device with gate dielectric containing mixed rare earth elementsTOKYO ELECTRON LTD·Filed 2006·Granted Oct 19, 2010·4 cites·4 claims
- 4776US10790156B2Atomic layer etching using a boron-containing gas and hydrogen fluoride gasTOKYO ELECTRON LTD·Filed 2019·Granted Sep 29, 2020·1 cites·16 claims
- 4876US8334183B2Semiconductor device containing a buried threshold voltage adjustment layer and method of formingCLARK ROBERT D·Filed 2010·Granted Dec 18, 2012·3 cites·10 claims
- 4976US7964515B2Method of forming high-dielectric constant films for semiconductor devicesTOKYO ELECTRON LTD·Filed 2007·Granted Jun 21, 2011·5 cites·17 claims
- 5075US9978649B2Solid source doping for source and drain extension dopingTOKYO ELECTRON LTD·Filed 2017·Granted May 22, 2018·2 cites·20 claims
Showing the top 50 of 138 patent records by PatentIndex Score.
Join the waitlist — get patent alerts
Get an alert when Robert D. Clark files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →