Inventor · disambiguated record
Paul D. Hurwitz
Also filed as: HURWITZ PAUL · HURWITZ PAUL D
46 granted patents·3 pending applications·224 citations·filing 2004–2022
97Inventor score
Files withNEWPORT FAB LLC40NEWPORT FAB LLC DBA JAZZ SEMICONDUCTOR INC3HURWITZ PAUL2BLASCHKE VOLKER1HURWITZ PAUL D1
Top patents by PatentIndex Score
49 records- 0199US9917104B1Hybrid MOS-PCM CMOS SOI switchTOWER SEMICONDUCTOR LTD·Filed 2017·Granted Mar 13, 2018·89 cites·19 claims
- 0295US11031555B2Power handling improvements for phase-change material (PCM) radio frequency (RF) switch circuitsNEWPORT FAB LLC·Filed 2020·Granted Jun 8, 2021·3 cites·20 claims
- 0395US10062712B1Method to fabricate both FD-SOI and PD-SOI devices within a single integrated circuitNEWPORT FAB LLC·Filed 2017·Granted Aug 28, 2018·28 cites·11 claims
- 0495US9190994B2RF switch branch having improved linearityNEWPORT FAB LLC·Filed 2013·Granted Nov 17, 2015·20 cites·20 claims
- 0591US10325833B1Bent polysilicon gate structure for small footprint radio frequency (RF) switchNEWPORT FAB LLC·Filed 2018·Granted Jun 18, 2019·9 cites·20 claims
- 0687US10319716B2Substrate isolation for low-loss radio frequency (RF) circuitsNEWPORT FAB LLC·Filed 2017·Granted Jun 11, 2019·5 cites·21 claims
- 0785US11581215B2Body-source-tied semiconductor-on-insulator (SOI) transistorNEWPORT FAB LLC·Filed 2020·Granted Feb 14, 2023·2 cites·20 claims
- 0885US10044331B2High power RF switches using multiple optimized transistorsNEWPORT FAB LLC·Filed 2016·Granted Aug 7, 2018·4 cites·21 claims
- 0984US10530357B1Dynamic impedance circuit for uniform voltage distribution in a high power switch branchNEWPORT FAB LLC·Filed 2018·Granted Jan 7, 2020·4 cites·19 claims
- 1083US10469121B2Non-linear shunt circuit for third order harmonic reduction in RF switchesNEWPORT FAB LLC·Filed 2017·Granted Nov 5, 2019·5 cites·4 claims
- 1183US10062644B2Copper interconnect for improving radio frequency (RF) silicon-on-insulator (SOI) switch field effect transistor (FET) stacksNEWPORT FAB LLC·Filed 2016·Granted Aug 28, 2018·4 cites·17 claims
- 1282US8598713B2Deep silicon via for grounding of circuits and devices, emitter ballasting and isolationBLASCHKE VOLKER·Filed 2010·Granted Dec 3, 2013·7 cites·20 claims
- 1380US9966301B2Reduced substrate effects in monolithically integrated RF circuitsNEWPORT FAB LLC·Filed 2016·Granted May 8, 2018·3 cites·19 claims
- 1480US9577035B2Isolated through silicon vias in RF technologiesNEWPORT FAB LLC DBA JAZZ SEMICONDUCTOR·Filed 2013·Granted Feb 21, 2017·7 cites·20 claims
- 1576US10686486B1Radio frequency (RF) switch with improved power handlingNEWPORT FAB LLC·Filed 2019·Granted Jun 16, 2020·2 cites·20 claims
- 1675US10290631B2Linearity and lateral isolation in a BiCMOS process through counter-doping of epitaxial silicon regionNEWPORT FAB LLC·Filed 2017·Granted May 14, 2019·2 cites·13 claims
- 1773US11164740B2Semiconductor structure having porous semiconductor layer for RF devicesNEWPORT FAB LLC·Filed 2019·Granted Nov 2, 2021·1 cites·20 claims
- 1873US10991631B2High performance SiGe heterojunction bipolar transistors built on thin-film silicon-on-insulator substrates for radio frequency applicationsNEWPORT FAB LLC·Filed 2018·Granted Apr 27, 2021·1 cites·18 claims
- 1973US10177045B2Bulk CMOS RF switch with reduced parasitic capacitanceNEWPORT FAB LLC·Filed 2018·Granted Jan 8, 2019·1 cites·9 claims
- 2072US10587233B2High power RF switches using multiple optimized transistors and methods for fabricating sameNEWPORT FAB LLC·Filed 2018·Granted Mar 10, 2020·1 cites·12 claims
- 2171US9754814B2Integrated passive device having improved linearity and isolationNEWPORT FAB LLC·Filed 2014·Granted Sep 5, 2017·2 cites·5 claims
- 2271US6933202B1Method for integrating SiGe NPN and vertical PNP devices on a substrate and related structureNEWPORT FAB LLC·Filed 2004·Granted Aug 23, 2005·13 cites·20 claims
- 2370US11756823B2Method for manufacturing body-source-tied SOI transistorNEWPORT FAB LLC·Filed 2022·Granted Sep 12, 2023·0 cites·20 claims
- 2470US10916585B2Stacked phase-change material (PCM) radio frequency (RF) switches with improved RF power handlingNEWPORT FAB LLC·Filed 2018·Granted Feb 9, 2021·1 cites·24 claims
- 2570US10325907B2Substrate isolation for low-loss radio frequency (RF) circuitsNEWPORT FAB LLC·Filed 2018·Granted Jun 18, 2019·1 cites·25 claims
- 2669US11857857B2Portable marker for ice hockeyHURWITZ PAUL·Filed 2019·Granted Jan 2, 2024·3 cites·14 claims
- 2769US8963247B2Selective amorphization for electrical signal isolation and linearity in SOI structuresNEWPORT FAB LLC·Filed 2012·Granted Feb 24, 2015·2 cites·15 claims
- 2868US9105681B2Method for forming deep silicon via for grounding of circuits and devices, emitter ballasting and isolationNEWPORT FAB LLC·Filed 2012·Granted Aug 11, 2015·2 cites·16 claims
- 2967US12347673B2Method for forming a semiconductor structure having a porous semiconductor layer in RF devicesNEWPORT FAB LLC·Filed 2021·Granted Jul 1, 2025·0 cites·20 claims
- 3063US8956949B2Electrical signal isolation in semiconductor structuresNEWPORT FAB LLC·Filed 2014·Granted Feb 17, 2015·1 cites·20 claims
- 3162US9362160B2SOI structure and method for utilizing trenches for signal isolation and linearityNEWPORT FAB LLC·Filed 2012·Granted Jun 7, 2016·1 cites·20 claims
- 3256US11164892B2Semiconductor-on-insulator (SOI) device with reduced parasitic capacitanceNEWPORT FAB LLC·Filed 2019·Granted Nov 2, 2021·0 cites·18 claims
- 3355US10347625B2Linearity and lateral isolation in a BiCMOS process through counter-doping of epitaxial silicon regionNEWPORT FAB LLC·Filed 2018·Granted Jul 9, 2019·0 cites·21 claims
- 3454US11955555B2Field effect transistors with reduced leakage currentNEWPORT FAB LLC·Filed 2022·Granted Apr 9, 2024·0 cites·19 claims
- 3554US10622262B2High performance SiGe heterojunction bipolar transistors built on thin film silicon-on-insulator substrates for radio frequency applicationsNEWPORT FAB LLC·Filed 2017·Granted Apr 14, 2020·0 cites·22 claims
- 3653US9634089B2Selective amorphization for signal isolation and linearityNEWPORT FAB LLC·Filed 2014·Granted Apr 25, 2017·0 cites·19 claims
- 3753US9343353B2SOI structure for signal isolation and linearityNEWPORT FAB LLC·Filed 2014·Granted May 17, 2016·0 cites·18 claims
- 3853US7863148B2Method for integrating SiGe NPN and vertical PNP devicesNEWPORT FAB LLC·Filed 2009·Granted Jan 4, 2011·0 cites·20 claims
- 3952US11195920B2Semiconductor structure having porous semiconductor segment for RF devices and bulk semiconductor region for non-RF devicesNEWPORT FAB LLC·Filed 2019·Granted Dec 7, 2021·0 cites·19 claims
- 4051US10177044B2Bulk CMOS RF switch with reduced parasitic capacitanceNEWPORT FAB LLC·Filed 2017·Granted Jan 8, 2019·0 cites·8 claims
- 4147US7541231B1Integration of SiGe NPN and vertical PNP devices on a substrateNEWPORT FAB LLC·Filed 2005·Granted Jun 2, 2009·0 cites·17 claims
- 4245US9941353B2Structure and method for mitigating substrate parasitics in bulk high resistivity substrate technologyNEWPORT FAB LLC·Filed 2016·Granted Apr 10, 2018·0 cites·18 claims
- 4344US8816471B2Electrical signal isolation and linearity in SOI structuresHURWITZ PAUL D·Filed 2012·Granted Aug 26, 2014·0 cites·12 claims
- 4442US9620617B2Structure and method for reducing substrate parasitics in semiconductor on insulator technologyNEWPORT FAB LLC·Filed 2015·Granted Apr 11, 2017·0 cites·17 claims
- 4542US9608079B2Semiconductor device having reduced drain-to-source capacitanceNEWPORT FAB LLC·Filed 2016·Granted Mar 28, 2017·0 cites·20 claims
- 4642US2022370875A1Sound emitting hockey puckHURWITZ PAUL·Filed 2020·Application pending·0 cites
- 4736US10586870B2Wide contact structure for small footprint radio frequency (RF) switchNEWPORT FAB LLC DBA JAZZ SEMICONDUCTOR INC·Filed 2018·Granted Mar 10, 2020·0 cites·20 claims
- 4829US2018069035A1Tensile Contact Etch Stop Layer (CESL) For Radio Frequency (RF) Silicon-On-Insulator (SOI) Switch TechnologyNEWPORT FAB LLC DBA JAZZ SEMICONDUCTOR INC·Filed 2016·Application pending·0 cites
- 4925US2017338321A1Nickel silicide implementation for silicon-on-insulator (soi) radio frequency (rf) switch technologyNEWPORT FAB LLC DBA JAZZ SEMICONDUCTOR INC·Filed 2016·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →