Inventor · disambiguated record
Toshiyuki Tanahashi
Also filed as: TANAHASHI TOSHIYUKI
9 granted patents·1 pending application·102 citations·filing 1983–2018
88Inventor score
Top patents by PatentIndex Score
10 records- 0177US9373939B2Method for manufacturing semiconductor device and the semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2015·Granted Jun 21, 2016·2 cites·5 claims
- 0264US5202285ASemiconductor laser having double heterostructure and method of producing sameFUJITSU LTD·Filed 1992·Granted Apr 13, 1993·26 cites·20 claims
- 0358US5436194AStripe laser diode having an improved efficiency for current confinementFUJITSU LTD·Filed 1994·Granted Jul 25, 1995·17 cites·29 claims
- 0452US5336635AManufacturing method of semiconductor laser of patterned-substrate typeFUJITSU LTD·Filed 1993·Granted Aug 9, 1994·19 cites·11 claims
- 0551US10594110B2Vertical cavity surface emitting laser, method for fabricating vertical cavity surface emitting laserSUMITOMO ELECTRIC INDUSTRIES·Filed 2018·Granted Mar 17, 2020·0 cites·5 claims
- 0650US4592791ALiquid phase epitaxial growth method for producing a III-V group compound semiconductorFUJITSU LTD·Filed 1983·Granted Jun 3, 1986·7 cites·6 claims
- 0747US5255281ASemiconductor laser having double heterostructureFUJITSU LTD·Filed 1992·Granted Oct 19, 1993·12 cites·21 claims
- 0847US2019044306A1Vertical cavity surface emitting laser, method for fabricating vertical cavity surface emitting laserSUMITOMO ELECTRIC INDUSTRIES·Filed 2018·Application pending·0 cites
- 0946US5621748AStripe laser diode having an improved efficiency for current confinementFUJITSU LTD·Filed 1995·Granted Apr 15, 1997·13 cites·10 claims
- 1035US5375136ASemiconductor laser of patterned-substrate type and structure thereofFUJITSU LTD·Filed 1994·Granted Dec 20, 1994·6 cites·6 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →