Inventor · disambiguated record
Nadeemullah A. Mahadik
Also filed as: MAHADIK NADEEMULLAH A
5 granted patents·3 pending applications·5 citations·filing 2014–2022
67Inventor score
Files withUS GOV SEC NAVY4MAHADIK NADEEMULLAH A1TADJER MARKO J1The Government of the United State of America as represented by the Secretary of the Navy1US NAVY1
Top patents by PatentIndex Score
8 records- 0173US9129799B2Elimination of basal plane dislocations in post growth silicon carbide epitaxial layers by high temperature annealing while preserving surface morphologyMAHADIK NADEEMULLAH A·Filed 2014·Granted Sep 8, 2015·4 cites·12 claims
- 0272US2022406591A1Low Temperature Plasma-Assisted Atomic Layer Epitaxy of Hexagonal InN Films and its Alloys with AlNUS GOV SEC NAVY·Filed 2022·Application pending·0 cites
- 0365US10020366B2Removal of basal plane dislocations from silicon carbide substrate surface by high temperature annealing and preserving surface morphologyUS NAVY·Filed 2016·Granted Jul 10, 2018·1 cites·20 claims
- 0463US2020294792A1Indium Nitride MaterialUS GOV SEC NAVY·Filed 2020·Application pending·0 cites
- 0557US11443942B2Plasma-assisted atomic layer epitaxy of cubic and hexagonal InN films and its alloys with AIN at low temperaturesUS GOV SEC NAVY·Filed 2017·Granted Sep 13, 2022·0 cites·19 claims
- 0645US2021296524A1SiGeSn VIRTUAL SUBSTRATE FORMED BY MOLECULAR BEAM EPITAXY ON A Si SUBSTRATE FOR THE STRAINED GROWTH OF GeSnUS GOV SEC NAVY·Filed 2021·Application pending·0 cites
- 0743US11171055B2UV laser slicing of β-Ga2O3 by micro-crack generation and propagationThe Government of the United State of America as represented by the Secretary of the Navy·Filed 2020·Granted Nov 9, 2021·0 cites·21 claims
- 0827US10403509B2Basal plane dislocation elimination in 4H—SiC by pulsed rapid thermal annealingTADJER MARKO J·Filed 2015·Granted Sep 3, 2019·0 cites·6 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →