Inventor · disambiguated record
Andrew Ott
Also filed as: OTT ANDREW · OTT ANDREW W
16 granted patents·6 pending applications·506 citations·filing 1997–2011
94Inventor score
Top patents by PatentIndex Score
22 records- 0196US7790631B2Selective deposition of a dielectric on a self-assembled monolayer-adsorbed metalINTEL CORP·Filed 2006·Granted Sep 7, 2010·80 cites·8 claims
- 0296US6043177AModification of zeolite or molecular sieve membranes using atomic layer controlled chemical vapor depositionUNIV TECHNOLOGY CORP·Filed 1997·Granted Mar 28, 2000·166 cites·8 claims
- 0393US6518184B1Enhancement of an interconnectINTEL CORP·Filed 2002·Granted Feb 11, 2003·61 cites·20 claims
- 0489US6713873B1Adhesion between dielectric materialsINTEL CORP·Filed 2002·Granted Mar 30, 2004·49 cites·3 claims
- 0585US8120114B2Transistor having an etch stop layer including a metal compound that is selectively formed over a metal gateOTT ANDREW·Filed 2006·Granted Feb 21, 2012·13 cites·17 claims
- 0682US6051517AModified zeolite membraneUNIV TECHNOLOGY CORP·Filed 1999·Granted Apr 18, 2000·46 cites·18 claims
- 0776US7169715B2Forming a dielectric layer using porogensINTEL CORP·Filed 2003·Granted Jan 30, 2007·18 cites·20 claims
- 0874US6974772B1Integrated low-k hard maskINTEL CORP·Filed 2004·Granted Dec 13, 2005·17 cites·8 claims
- 0973US7214594B2Method of making semiconductor device using a novel interconnect cladding layerINTEL CORP·Filed 2002·Granted May 8, 2007·19 cites·17 claims
- 1072US8399317B2Transistor having an etch stop layer including a metal compound that is selectively formed over a metal gate, and method thereforOTT ANDREW·Filed 2011·Granted Mar 19, 2013·3 cites·12 claims
- 1172US7135775B2Enhancement of an interconnectINTEL CORP·Filed 2002·Granted Nov 14, 2006·12 cites·8 claims
- 1267US6992391B2Dual-damascene interconnects without an etch stop layer by alternating ILDsINTEL CORP·Filed 2001·Granted Jan 31, 2006·12 cites·15 claims
- 1355US7164206B2Structure in a microelectronic device including a bi-layer for a diffusion barrier and an etch-stop layerINTEL CORP·Filed 2001·Granted Jan 16, 2007·8 cites·11 claims
- 1449US7138158B2Forming a dielectric layer using a hydrocarbon-containing precursorINTEL CORP·Filed 2003·Granted Nov 21, 2006·2 cites·26 claims
- 1546US7199473B2Integrated low-k hard maskINTEL CORP·Filed 2005·Granted Apr 3, 2007·0 cites·14 claims
- 1646US2007032675A1Forming a dielectric layer using a hydrocarbon-containing precursorMEAGLEY ROBERT P·Filed 2006·Application pending·0 cites
- 1744US2005208753A1Dual-damascene interconnects without an etch stop layer by alternating ILDsOTT ANDREW·Filed 2005·Application pending·0 cites
- 1840US6645877B2Method of operating a processing chamber having multiple stationsINTEL CORP·Filed 2002·Granted Nov 11, 2003·0 cites·25 claims
- 1939US2004101667A1Adhesion between dielectric materialsFiled 2003·Application pending·0 cites
- 2038US2005087517A1Adhesion between carbon doped oxide and etch stop layersFiled 2003·Application pending·0 cites
- 2137US2004119163A1Method of making semiconductor devices using carbon nitride, a low-dielectric-constant hard mask and/or etch stopFiled 2002·Application pending·0 cites
- 2236US2003173651A1Method of making a semiconductor device using a damascene interconnect with a laminated dielectricFiled 2002·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →