Inventor · disambiguated record
Ryoma Tsukuda
Also filed as: TSUKUDA RYOMA
5 granted patents·4 pending applications·11 citations·filing 2003–2019
67Inventor score
Top patents by PatentIndex Score
9 records- 0164US6840844B2Process for preparing p-type thermoelectric materialMITSUI MINING & SMELTING CO·Filed 2003·Granted Jan 11, 2005·11 cites·13 claims
- 0261US11652216B2Electrode catalyst layer for fuel cells and solid polymer fuel cell using sameMITSUI MINING & SMELTING CO LTD·Filed 2019·Granted May 16, 2023·0 cites·9 claims
- 0359US8003218B2Al-Ni-B alloy material for reflective filmMITSUI MINING & SMELTING CO·Filed 2007·Granted Aug 23, 2011·0 cites·16 claims
- 0457US10615425B2Tin oxide, electrode catalyst for fuel cells, membrane electrode assembly, and solid polymer fuel cellMITSUI MINING & SMELTING CO·Filed 2016·Granted Apr 7, 2020·0 cites·11 claims
- 0554US10629935B2Fuel cell electrode catalyst layer, production method therefor, membrane electrode assembly, and solid polymer fuel cellMITSUI MINING & SMELTING CO·Filed 2015·Granted Apr 21, 2020·0 cites·18 claims
- 0652US2011158845A1Al-Ni ALLOY WIRING ELECTRODE MATERIALMITSUI MINING & SMELTING CO·Filed 2009·Application pending·0 cites
- 0736US2003168094A1Thermoelectric material and process for manufacturing the sameMITSUI MINING & SMELTING CO·Filed 2003·Application pending·0 cites
- 0836US2004217333A1N-type thermoelectric material and method of preparing thereofMITSUI MINING & SMELTING CO·Filed 2003·Application pending·0 cites
- 0932US2010244032A1Aluminum-nickel alloy wiring material, device for a thin film transistor and a thin film transistor substrate using the same, and method of manufacturing the thin film transistor substrateSAMSUNG ELECTRONICS CO LTD·Filed 2010·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →