Inventor · disambiguated record

Hsueh Wen Tsau

Also filed as: TSAU HSUEH WEN

47 granted patents·1 pending application·143 citations·filing 2009–2025

97Inventor score

Technology areasH10P H10D H10W H01L

Files withTAIWAN SEMICONDUCTOR MFG CO LTD39 TAIWAN SEMICONDUCTOR MFG4 TSAU HSUEH WEN3 CHAN BOR-WEN1 SU LI-LIN1

Top patents by PatentIndex Score

48 records

0199US11404312B2Contact plug with impurity variationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 2, 2022·8 cites·19 claims
0298US9935173B1Structure and formation method of semiconductor device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Apr 3, 2018·37 cites·20 claims
0394US10297453B2Pre-deposition treatment and atomic layer deposition (ALD) process and structures formed therebyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted May 21, 2019·11 cites·20 claims
0494US9947540B2Pre-deposition treatment and atomic layer deposition (ALD) process and structures formed therebyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Apr 17, 2018·14 cites·20 claims
0594US9871114B2Metal gate scheme for device and methods of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jan 16, 2018·8 cites·20 claims
0694US9614052B2Copper contact plugs with barrier layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Apr 4, 2017·9 cites·17 claims
0791US10283619B2Metal gate scheme for device and methods of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted May 7, 2019·5 cites·20 claims
0889US10692770B2Geometry for threshold voltage tuning on semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jun 23, 2020·4 cites·20 claims
0989US8093117B2Method of forming a metal gateTSAU HSUEH WEN·Filed 2010·Granted Jan 10, 2012·11 cites·20 claims
1089US2025359251A1Tuning Threshold Voltage in Field-Effect TransistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
1188US11626493B2Semiconductor device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Apr 11, 2023·1 cites·20 claims
1288US11038029B2Semiconductor device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jun 15, 2021·3 cites·20 claims
1387US10741400B2Gate replacement structures in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Aug 11, 2020·3 cites·19 claims
1487US9755039B2Semiconductor device having a metal gate electrode stackTSAU HSUEH WEN·Filed 2011·Granted Sep 5, 2017·8 cites·17 claims
1584US12484277B2Tuning threshold voltage in field-effect transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Nov 25, 2025·0 cites·20 claims
1684US10128237B2Methods of gate replacement in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Nov 13, 2018·3 cites·19 claims
1783US12033893B2Contact plug with impurity variationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 9, 2024·0 cites·20 claims
1883US11404416B2Low resistance fill metal layer material as stressor in metal gatesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 2, 2022·2 cites·20 claims
1982US12040364B2Semiconductor device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 16, 2024·0 cites·20 claims
2082US9136206B2Copper contact plugs with barrier layersSU LI-LIN·Filed 2012·Granted Sep 15, 2015·5 cites·19 claims
2181US12389674B2Low resistance fill metal layer material as stressor in metal gatesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Aug 12, 2025·0 cites·20 claims
2281US10818767B2Semiconductor device having a metal gate electrode stackTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Oct 27, 2020·2 cites·19 claims
2378US11769694B2Contact plug with impurity variationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 26, 2023·0 cites·20 claims
2478US10978357B2Semiconductor arrangement and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Apr 13, 2021·2 cites·20 claims
2577US8357603B2Metal gate fill and method of makingTAIWAN SEMICONDUCTOR MFG·Filed 2009·Granted Jan 22, 2013·6 cites·20 claims
2676US11855181B2Tuning threshold voltage in field-effect transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 26, 2023·0 cites·20 claims
2774US11923367B2Low resistance fill metal layer material as stressor in metal gatesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 5, 2024·0 cites·20 claims
2871US11935957B2Geometry for threshold voltage tuning on semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 19, 2024·0 cites·19 claims
2970US11251131B2Copper contact plugs with barrier layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 15, 2022·0 cites·20 claims
3069US11094828B2Geometry for threshold voltage tuning on semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 17, 2021·0 cites·20 claims
3167US12046657B2Method of manufacturing a semiconductor device including capping layer, barrier layer and work function layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 23, 2024·0 cites·20 claims
3265US11257923B2Tuning threshold voltage in field-effect transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Feb 22, 2022·0 cites·20 claims
3365US11211465B2Semiconductor device having gate dielectric and inhibitor film over gate dielectricTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 28, 2021·0 cites·20 claims
3463US8564072B2Semiconductor device having a blocking structure and method of manufacturing the sameCHAN BOR-WEN·Filed 2010·Granted Oct 22, 2013·1 cites·20 claims
3562US10510854B2Semiconductor device having gate body and inhibitor film between conductive prelayer over gate body and conductive layer over inhibitor filmTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 17, 2019·0 cites·16 claims
3661US11127836B2Metal gate scheme for device and methods of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Sep 21, 2021·0 cites·20 claims
3760US10867848B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 15, 2020·0 cites·20 claims
3858US10700010B2Copper contact plugs with barrier layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jun 30, 2020·0 cites·22 claims
3958US10170417B2Semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jan 1, 2019·0 cites·20 claims
4058US10014382B2Semiconductor device with sidewall passivation and method of makingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Jul 3, 2018·0 cites·20 claims
4156US8785313B2Method of manufacturing device having a blocking structureTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Jul 22, 2014·0 cites·19 claims
4255US9824969B1Semiconductor structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Nov 21, 2017·0 cites·20 claims
4354US10985265B2Method for forming semiconductor device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Apr 20, 2021·0 cites·20 claims
4453US9287372B2Method of forming trench on FinFET and FinFET thereofTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Mar 15, 2016·0 cites·20 claims
4551US9419100B2Method for fabricating a metal gate electrodeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Aug 16, 2016·0 cites·20 claims
4648US10256311B2Fin field effect transistor (FinFET)TAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Apr 9, 2019·0 cites·20 claims
4747US9349726B2Semiconductor device fabrication method and structureTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted May 24, 2016·0 cites·20 claims
4847US9105653B2Method for fabricating a metal gate electrodeTSAU HSUEH WEN·Filed 2010·Granted Aug 11, 2015·0 cites·20 claims

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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →