Inventor · disambiguated record
Young-Gun Ko
Also filed as: KO YOUNG G · KO YOUNG GUN
30 granted patents·9 pending applications·626 citations·filing 2000–2016
97Inventor score
Top patents by PatentIndex Score
39 records- 0197US7569456B2MOS transistor with elevated source and drain structures and method of fabrication thereofSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Aug 4, 2009·109 cites·26 claims
- 0295US6498370B1SOI semiconductor integrated circuit for eliminating floating body effects in SOI MOSFETs and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Dec 24, 2002·87 cites·14 claims
- 0393US10141312B2Semiconductor devices including insulating materials in finsSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Nov 27, 2018·16 cites·18 claims
- 0493US9240481B2Semiconductor device having embedded strain-inducing patternMAEDA SHIGENOBU·Filed 2015·Granted Jan 19, 2016·8 cites·2 claims
- 0593US6521959B2SOI semiconductor integrated circuit for eliminating floating body effects in SOI MOSFETs and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Feb 18, 2003·85 cites·8 claims
- 0692US8884298B2Semiconductor device having embedded strain-inducing pattern and method of forming the sameMAEDA SHIGENOBU·Filed 2013·Granted Nov 11, 2014·11 cites·30 claims
- 0789US7388267B1Selective stress engineering for SRAM stability improvementIBM·Filed 2006·Granted Jun 17, 2008·16 cites·5 claims
- 0889US6407429B1Semiconductor device having silicon on insulator and fabricating method thereforSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Jun 18, 2002·45 cites·8 claims
- 0987US9209177B2Semiconductor devices including gates and dummy gates of different materialsSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Dec 8, 2015·9 cites·17 claims
- 1086US8962435B2Method of forming semiconductor device having embedded strain-inducing patternMAEDA SHIGENOBU·Filed 2014·Granted Feb 24, 2015·5 cites·4 claims
- 1184US7338874B2Highly integrated semiconductor device with silicide layer that secures contact margin and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Mar 4, 2008·8 cites·10 claims
- 1283US6693013B2Semiconductor transistor using L-shaped spacer and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Feb 17, 2004·29 cites·21 claims
- 1380US7612414B2Overlapped stressed liners for improved contactsIBM·Filed 2007·Granted Nov 3, 2009·7 cites·11 claims
- 1480US7531401B2Method for improved fabrication of a semiconductor using a stress proximity technique processIBM·Filed 2007·Granted May 12, 2009·7 cites·18 claims
- 1579US7227224B2MOS transistor with elevated source and drain structures and method of fabrication thereofSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Jun 5, 2007·21 cites·21 claims
- 1679US7098514B2Highly integrated semiconductor device with silicide layer that secures contact margin and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Aug 29, 2006·19 cites·10 claims
- 1777US6693325B1Semiconductor device having silicon on insulator and fabricating method thereforSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Feb 17, 2004·22 cites·5 claims
- 1875US6770540B2Method of fabricating semiconductor device having L-shaped spacerSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Aug 3, 2004·20 cites·22 claims
- 1974US7471548B2Structure of static random access memory with stress engineering for stabilityIBM·Filed 2006·Granted Dec 30, 2008·13 cites·1 claims
- 2073US6869839B2Method of fabricating a semiconductor device having an L-shaped spacerSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Mar 22, 2005·16 cites·20 claims
- 2170US7618868B2Method of manufacturing field effect transistors using sacrificial blocking layersSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Nov 17, 2009·3 cites·8 claims
- 2268US6858907B2Method of fabricating semiconductor device having notched gateSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Feb 22, 2005·14 cites·19 claims
- 2367US6689648B2Semiconductor device having silicon on insulator and fabricating method thereforSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Feb 10, 2004·11 cites·23 claims
- 2465US6706569B2SOI semiconductor integrated circuit for eliminating floating body effects in SOI MOSFETs and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Mar 16, 2004·10 cites·14 claims
- 2564US7576407B2Devices and methods for constructing electrically programmable integrated fuses for low power applicationsSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Aug 18, 2009·4 cites·38 claims
- 2664US7052965B2Methods of fabricating MOS field effect transistors with pocket regions using implant blocking patternsSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted May 30, 2006·9 cites·15 claims
- 2761US6703280B2SOI semiconductor integrated circuit for eliminating floating body effects in SOI MOSFETs and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Mar 9, 2004·8 cites·8 claims
- 2859US6917085B2Semiconductor transistor using L-shaped spacerSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Jul 12, 2005·7 cites·4 claims
- 2958US6844223B2Semiconductor device having silicon on insulator and fabricating method thereforSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Jan 18, 2005·7 cites·15 claims
- 3053US2005156199A1Method of forming a CMOS deviceSAMSUNG ELECTRONICS CO LTD·Filed 2005·Application pending·0 cites
- 3146US2015251160A1Hierarchically porous amine-silica monolith and preparation method thereofKOREA INST SCI & TECH·Filed 2014·Application pending·0 cites
- 3242US2008124859A1Methods of Forming CMOS Integrated Circuits Using Gate Sidewall Spacer Reduction TechniquesSUN MIN CHUL·Filed 2006·Application pending·0 cites
- 3342US2006213592A1Nanocrystalline titanium alloy, and method and apparatus for manufacturing the samePOSTECH FOUNDATION·Filed 2005·Application pending·0 cites
- 3442US2006231906A1Structure for measuring gate misalignment and measuring method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2005·Application pending·0 cites
- 3540US2006157750A1Semiconductor device having etch-resistant L-shaped spacer and fabrication method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2005·Application pending·0 cites
- 3638US7541234B2Methods of fabricating integrated circuit transistors by simultaneously removing a photoresist layer and a carbon-containing layer on different active areasSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jun 2, 2009·0 cites·16 claims
- 3735US2004185608A1Methods of forming integrated circuit devices using buffer layers covering conductive/insulating interfacesFiled 2003·Application pending·0 cites
- 3835US2007006983A1Method for producing fine circuit lines and conductive boardSAMSUNG ELECTRO MECH·Filed 2006·Application pending·0 cites
- 3934US2009166757A1Stress engineering for sram stabilityIBM·Filed 2007·Application pending·0 cites
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