Inventor · disambiguated record
Kuang-Po Hsueh
Also filed as: HSUEH KUANG-PO
4 granted patents·1 pending application·4 citations·filing 2006–2022
59Inventor score
Top patents by PatentIndex Score
5 records- 0165US7622788B2GaN heterojunction bipolar transistor with a p-type strained InGaN base layerUNIV NAT CENTRAL·Filed 2006·Granted Nov 24, 2009·4 cites·8 claims
- 0246US7759172B2Method of forming a planar combined structure of a bipolar junction transistor and n-type and p-type metal semiconductor field-effect transistors and method for forming the sameUNIV NAT CENTRAL·Filed 2008·Granted Jul 20, 2010·0 cites·2 claims
- 0345US12364005B2Stacked multilayer 3D GaN high electron mobility transistor structure and process methodNANJING GREENCHIP SEMICONDUCTOR CO LTD·Filed 2022·Granted Jul 15, 2025·0 cites·13 claims
- 0445US12113127B2GaN-based high electron mobility transistors and fabrication method thereofNANJING GREENCHIP SEMICONDUCTOR CO LTD·Filed 2022·Granted Oct 8, 2024·0 cites·16 claims
- 0542US2008197422A1Planar combined structure of a bipolar junction transistor and N-type/P-type metal semiconductor field-effect transistors and method for forming the sameUNIV NAT CENTRAL·Filed 2007·Application pending·0 cites
Join the waitlist — get patent alerts
Get an alert when Kuang-Po Hsueh files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →