Inventor · disambiguated record
Charlotte Dewan Adams
Also filed as: ADAMS CHARLOTTE · ADAMS CHARLOTTE D · ADAMS CHARLOTTE DEWAN
11 granted patents·2 pending applications·92 citations·filing 2001–2022
87Inventor score
Top patents by PatentIndex Score
13 records- 0194US11515427B2Precise bottom junction formation for vertical transport field effect transistor with highly doped epitaxial source/drain, sharp junction gradient, and/or reduced parasitic capacitanceIBM·Filed 2020·Granted Nov 29, 2022·4 cites·13 claims
- 0292US6566242B1Dual damascene copper interconnect to a damascene tungsten wiring levelIBM·Filed 2001·Granted May 20, 2003·63 cites·41 claims
- 0383US8941177B2Semiconductor devices having different gate oxide thicknessesADAMS CHARLOTTE DEWAN·Filed 2012·Granted Jan 27, 2015·8 cites·10 claims
- 0480US9087722B2Semiconductor devices having different gate oxide thicknessesIBM·Filed 2014·Granted Jul 21, 2015·4 cites·3 claims
- 0574US8030709B2Metal gate stack and semiconductor gate stack for CMOS devicesIBM·Filed 2007·Granted Oct 4, 2011·6 cites·12 claims
- 0665US12068415B2Precise bottom junction formation for vertical transport field effect transistor with highly doped epitaxial source/drain, sharp junction gradient, and/or reduced parasitic capacitanceIBM·Filed 2022·Granted Aug 20, 2024·0 cites·11 claims
- 0765US11888048B2Gate oxide for nanosheet transistor devicesIBM·Filed 2021·Granted Jan 30, 2024·0 cites·20 claims
- 0861US7230336B2Dual damascene copper interconnect to a damascene tungsten wiring levelIBM·Filed 2003·Granted Jun 12, 2007·7 cites·12 claims
- 0959US11211474B2Gate oxide for nanosheet transistor devicesIBM·Filed 2020·Granted Dec 28, 2021·0 cites·20 claims
- 1053US10755918B2Spacer with laminate linerGLOBALFOUNDRIES INC·Filed 2018·Granted Aug 25, 2020·0 cites·20 claims
- 1151US10192791B1Semiconductor devices with robust low-k sidewall spacers and method for producing the sameGLOBALFOUNDRIES INC·Filed 2018·Granted Jan 29, 2019·0 cites·20 claims
- 1251US2024079276A1Non-shared metal gate integration for scaled gate all around (gaa) transistorsIBM·Filed 2022·Application pending·0 cites
- 1351US2024105769A1Structure to form and integrate high voltage finfet i/o device with nanosheet logic deviceIBM·Filed 2022·Application pending·0 cites
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