Inventor · disambiguated record
Atsushi Shiota
Also filed as: SHIOTA ATSUSHI
28 granted patents·11 pending applications·489 citations·filing 1995–2024
97Inventor score
Files withJSR CORP29TOYOTA MOTOR CO LTD3AKIYAMA MASAHIRO2AXCELIS TECH INC1CORNELL RES FOUNDATION INC1
Top patents by PatentIndex Score
39 records- 0193US7399715B2Organic silica-based film, method of forming the same, composition for forming insulating film for semiconductor device, interconnect structure, and semiconductor deviceJSR CORP·Filed 2005·Granted Jul 15, 2008·30 cites·13 claims
- 0291US7528207B2Method for producing polymer, polymer, composition for forming insulating film, method for producing insulating film, and insulating filmJSR CORP·Filed 2006·Granted May 5, 2009·16 cites·5 claims
- 0388US6800330B2Composition for film formation, method of film formation, and silica-based filmJSR CORP·Filed 2002·Granted Oct 5, 2004·43 cites·20 claims
- 0487US7291567B2Silica-based film, method of forming the same, composition for forming insulating film for semiconductor device, interconnect structure, and semiconductor deviceJSR CORP·Filed 2005·Granted Nov 6, 2007·16 cites·15 claims
- 0584US6406794B1Film-forming compositionJSR CORP·Filed 2001·Granted Jun 18, 2002·32 cites·17 claims
- 0683US8268403B2Method for forming organic silica film, organic silica film, wiring structure, semiconductor device, and composition for film formationAKIYAMA MASAHIRO·Filed 2005·Granted Sep 18, 2012·11 cites·20 claims
- 0783US7932295B2Organic silica-based film, method of forming the same, composition for forming insulating film for semiconductor device, interconnect structure, and semiconductor deviceJSR CORP·Filed 2008·Granted Apr 26, 2011·9 cites·30 claims
- 0882US7514151B2Insulating film and method for forming the same, and film-forming compositionJSR CORP·Filed 2006·Granted Apr 7, 2009·8 cites·5 claims
- 0982US6410151B1Composition for film formation, method of film formation, and insulating filmJSR CORP·Filed 2000·Granted Jun 25, 2002·30 cites·8 claims
- 1081US6190833B1Radiation-sensitive resin compositionJSR CORP·Filed 1998·Granted Feb 20, 2001·48 cites·8 claims
- 1181US5811504ALiquid crystalline epoxy monomer and liquid crystalline epoxy resin containing mesogen twinsCORNELL RES FOUNDATION INC·Filed 1995·Granted Sep 22, 1998·47 cites·19 claims
- 1280US8404786B2Polymer and process for producing the same, composition for forming insulating film, and insulating film and method of forming the sameAKIYAMA MASAHIRO·Filed 2010·Granted Mar 26, 2013·5 cites·17 claims
- 1380US7875317B2Composition for forming insulating film, method for producing same, silica-based insulating film, and method for forming sameJSR CORP·Filed 2006·Granted Jan 25, 2011·7 cites·15 claims
- 1480US6410150B1Composition for film formation, method of film formation, and insulating filmJSR CORP·Filed 2000·Granted Jun 25, 2002·28 cites·10 claims
- 1575US6890605B2Method of film formation, insulating film, and substrate for semiconductorJSR CORP·Filed 2002·Granted May 10, 2005·19 cites·16 claims
- 1675US6558747B2Method of forming insulating film and process for producing semiconductor deviceTOSHIBA KK·Filed 2001·Granted May 6, 2003·19 cites·20 claims
- 1774US7358317B2Polycarbosilane and method of producing the sameJSR CORP·Filed 2005·Granted Apr 15, 2008·2 cites·20 claims
- 1874US6902771B2Process for producing silica-based film, silica-based film, insulating film, and semiconductor deviceJSR CORP·Filed 2001·Granted Jun 7, 2005·20 cites·12 claims
- 1973US5773178AProcess for producing a patterned anisotropic polymeric filmJAPAN SYNTHETIC RUBBER CO LTD·Filed 1996·Granted Jun 30, 1998·44 cites·8 claims
- 2070US7026053B2Process for producing silica-based film, silica-based film, insulating film, and semiconductor deviceJSR CORP·Filed 2004·Granted Apr 11, 2006·15 cites·3 claims
- 2169US7297360B2Insulation filmJSR CORP·Filed 2003·Granted Nov 20, 2007·14 cites·15 claims
- 2267US7608928B2Laminated body and semiconductor deviceJSR CORP·Filed 2005·Granted Oct 27, 2009·3 cites·10 claims
- 2367US6824833B2Stacked film, insulating film and substrate for semiconductorJSR CORP·Filed 2002·Granted Nov 30, 2004·12 cites·13 claims
- 2465US7736748B2Insulating-film-forming composition, method of producing the same, silica-based insulating film, and method of forming the sameJSR CORP·Filed 2006·Granted Jun 15, 2010·2 cites·17 claims
- 2558US7011868B2Fluorine-free plasma curing process for porous low-k materialsAXCELIS TECH INC·Filed 2003·Granted Mar 14, 2006·6 cites·21 claims
- 2658US2024286533A1Power seat for automobileTOYOTA MOTOR CO LTD·Filed 2024·Application pending·0 cites
- 2754US12319228B2Automobile antitheft deviceTOYOTA MOTOR CO LTD·Filed 2023·Granted Jun 3, 2025·0 cites·5 claims
- 2852US6787193B2Method for the formation of silica film, silica film, insulating film, and semiconductor deviceJSR CORP·Filed 2002·Granted Sep 7, 2004·3 cites·11 claims
- 2950US2007027287A1Polymer and process for producing the same, composition for forming insulating film, and insulating film and method of forming the sameJSR CORP·Filed 2006·Application pending·0 cites
- 3049US2007015892A1Method for producing polymer, polymer, composition for forming insulating film, method for producing insulating film, and insulating filmJSR CORP·Filed 2006·Application pending·0 cites
- 3147US2006134336A1Novel polycarbosilane and method of producing the same, film-forming composition, and film and method of forming the sameJSR CORP·Filed 2005·Application pending·0 cites
- 3246US2022348163A1Vehicle lock controlling systemTOYOTA MOTOR CO LTD·Filed 2022·Application pending·0 cites
- 3343US2006210812A1Insulating film and method of forming the sameJSR CORP·Filed 2006·Application pending·0 cites
- 3441US2008038527A1Method for Forming Organic Silica Film, Organic Silica Film, Wiring Structure, Semiconductor Device, and Composition for Film FormationJSR CORP·Filed 2005·Application pending·0 cites
- 3537US6749944B2Stacked film, method for the formation of stacked film, insulating film, and substrate for semiconductorJSR CORP·Filed 2002·Granted Jun 15, 2004·0 cites·11 claims
- 3637US2002142586A1Method of forming dual damascene structureJSR CORP·Filed 2002·Application pending·0 cites
- 3737US2003157267A1Fluorine-free plasma curing process for porous low-k materialsFiled 2003·Application pending·0 cites
- 3836US2003104225A1Process for producing silica-based film, silica-based film, insulating film, and semiconductor deviceJSR CORP·Filed 2002·Application pending·0 cites
- 3935US2003157340A1Process for producing silica-based film, silica-based film, insulating film, and semiconductor deviceJSR CORP·Filed 2002·Application pending·0 cites
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →