Inventor · disambiguated record
Vladimir Ivantsov
Also filed as: IVANTSOV VLADIMIR · IVANTSOV VLADIMIR A
21 granted patents·3 pending applications·594 citations·filing 1994–2021
96Inventor score
Files withTECHNOLOGIES AND DEVICES INTER10OSTENDO TECHNOLOGIES INC5DMITRIEV VLADIMIR A2FREIBERGER COMPOUND MAT GMBH2CREE RESEARCH INC1
Top patents by PatentIndex Score
24 records- 0197US6936357B2Bulk GaN and ALGaN single crystalsTECHNOLOGIES AND DEVICES INTER·Filed 2003·Granted Aug 30, 2005·80 cites·17 claims
- 0296US6613143B1Method for fabricating bulk GaN single crystalsTECHNOLOGIES AND DEVICES INTER·Filed 2001·Granted Sep 2, 2003·85 cites·27 claims
- 0395US6616757B1Method for achieving low defect density GaN single crystal boulesTECHNOLOGIES AND DEVICES INTER·Filed 2001·Granted Sep 9, 2003·61 cites·27 claims
- 0495US6576054B1Method for fabricating bulk AlGaN single crystalsTECHNOLOGIES AND DEVICES INTER·Filed 2001·Granted Jun 10, 2003·49 cites·31 claims
- 0594US7727333B1HVPE apparatus and methods for growth of indium containing materials and materials and structures grown therebyTECHNOLOGIES AND DEVICES INTER·Filed 2007·Granted Jun 1, 2010·21 cites·22 claims
- 0693US7279047B2Reactor for extended duration growth of gallium containing single crystalsTECHNOLOGIES AND DEVICES INTER·Filed 2003·Granted Oct 9, 2007·36 cites·29 claims
- 0793US6656285B1Reactor for extended duration growth of gallium containing single crystalsTECHNOLOGIES AND DEVICES INTER·Filed 2001·Granted Dec 2, 2003·47 cites·18 claims
- 0893US5679153AMethod for reducing micropipe formation in the epitaxial growth of silicon carbide and resulting silicon carbide structuresCREE RESEARCH INC·Filed 1994·Granted Oct 21, 1997·148 cites·32 claims
- 0992US9577143B1Backflow reactor liner for protection of growth surfaces and for balancing flow in the growth linerOSTENDO TECHNOLOGIES INC·Filed 2013·Granted Feb 21, 2017·8 cites·22 claims
- 1090US7556688B2Method for achieving low defect density AlGaN single crystal boulesFREIBERGER COMPOUND MAT GMBH·Filed 2005·Granted Jul 7, 2009·15 cites·37 claims
- 1186US9023673B1Free HCL used during pretreatment and AlGaN growth to control growth layer orientation and inclusionsOSTENDO TECHNOLOGIES INC·Filed 2013·Granted May 5, 2015·8 cites·13 claims
- 1285US11661673B1HVPE apparatus and methods for growing indium nitride and indium nitride materials and structures grown therebyOSTENDO TECHNOLOGIES INC·Filed 2021·Granted May 30, 2023·1 cites·8 claims
- 1385US8647435B1HVPE apparatus and methods for growth of p-type single crystal group III nitride materialsDMITRIEV VLADIMIR A·Filed 2007·Granted Feb 11, 2014·11 cites·12 claims
- 1485US7611586B2Reactor for extended duration growth of gallium containing single crystalsTECHNOLOGIES AND DEVICES INTER·Filed 2007·Granted Nov 3, 2009·12 cites·10 claims
- 1573US9416464B1Apparatus and methods for controlling gas flows in a HVPE reactorDMITRIEV VLADIMIR A·Filed 2007·Granted Aug 16, 2016·4 cites·15 claims
- 1669US11322652B2Methods for producing composite GaN nanocolumns and light emitting structures made from the methodsOSTENDO TECHNOLOGIES INC·Filed 2016·Granted May 3, 2022·1 cites·22 claims
- 1766US8673074B2Growth of planar non-polar {1 -1 0 0} M-plane and semi-polar {1 1 -2 2} gallium nitride with hydride vapor phase epitaxy (HVPE)USIKOV ALEXANDER·Filed 2009·Granted Mar 18, 2014·4 cites·1 claims
- 1864US9443727B2Semi-polar III-nitride films and materials and method for making the sameOSTENDO TECHNOLOGIES INC·Filed 2014·Granted Sep 13, 2016·1 cites·20 claims
- 1964US8372199B2Bulk GaN and AlGaN single crystalsFREIBERGER COMPOUND MAT GMBH·Filed 2008·Granted Feb 12, 2013·0 cites·2 claims
- 2062US8728938B2Method for substrate pretreatment to achieve high-quality III-nitride epitaxyIVANTSOV VLADIMIR·Filed 2012·Granted May 20, 2014·2 cites·21 claims
- 2158US8092596B2Bulk GaN and AlGaN single crystalsMELNIK YURI V·Filed 2008·Granted Jan 10, 2012·0 cites·10 claims
- 2257US2005164044A1Bulk GaN and AlGaN single crystalsTECHNOLOGIES AND DEVICES INTER·Filed 2005·Application pending·0 cites
- 2357US2005244997A1Bulk GaN and AIGaN single crystalsTECHNOLOGIES AND DEVICES INTER·Filed 2005·Application pending·0 cites
- 2439US2003205193A1Method for achieving low defect density aigan single crystal boulesFiled 2001·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →