Inventor · disambiguated record
Stephen Furkay
Also filed as: FURKAY STEPHEN · FURKAY STEPHEN S · FURKAY STEPHEN SCOTT
14 granted patents·1 pending application·286 citations·filing 1996–2017
93Inventor score
Top patents by PatentIndex Score
15 records- 0195US7057923B2Field emission phase change diode memoryIBM·Filed 2003·Granted Jun 6, 2006·86 cites·30 claims
- 0290US7005665B2Phase change memory cell on silicon-on insulator substrateIBM·Filed 2004·Granted Feb 28, 2006·65 cites·19 claims
- 0378US7183628B2Structure and method of hyper-abrupt junction varactorsIBM·Filed 2004·Granted Feb 27, 2007·17 cites·13 claims
- 0475US7518215B2One mask hyperabrupt junction varactor using a compensated cathode contactIBM·Filed 2005·Granted Apr 14, 2009·6 cites·9 claims
- 0570US6878983B2High performance varactor diodesIBM·Filed 2003·Granted Apr 12, 2005·14 cites·8 claims
- 0669US6803269B2High performance varactor diodesIBM·Filed 2002·Granted Oct 12, 2004·13 cites·8 claims
- 0768US6097068ASemiconductor device fabrication method and apparatus using connecting implantsIBM·Filed 1998·Granted Aug 1, 2000·31 cites·5 claims
- 0867US6486510B2Reduction of reverse short channel effects by implantation of neutral dopantsIBM·Filed 2001·Granted Nov 26, 2002·9 cites·13 claims
- 0966US7700453B2Method for forming hyper-abrupt junction varactorsIBM·Filed 2007·Granted Apr 20, 2010·2 cites·20 claims
- 1066US6352912B1Reduction of reverse short channel effects by deep implantation of neutral dopantsIBM·Filed 2000·Granted Mar 5, 2002·8 cites·25 claims
- 1162US7253073B2Structure and method for hyper-abrupt junction varactorsIBM·Filed 2004·Granted Aug 7, 2007·7 cites·13 claims
- 1245US10014364B1On-chip resistors with a tunable temperature coefficient of resistanceGLOBALFOUNDRIES INC·Filed 2017·Granted Jul 3, 2018·0 cites·20 claims
- 1345US5896303ADiscretization technique for multi-dimensional semiconductor device simulationIBM·Filed 1996·Granted Apr 20, 1999·18 cites·22 claims
- 1444US6057184ASemiconductor device fabrication method using connecting implantsIBM·Filed 1997·Granted May 2, 2000·10 cites·11 claims
- 1544US2015192533A1Method of modeling concentration of reducible mobile ionic dopant in semiconductor device simulatorIBM·Filed 2014·Application pending·0 cites
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