Inventor · disambiguated record
Mitsuji Nunokawa
Also filed as: NUNOKAWA MITSUJI
10 granted patents·138 citations·filing 1991–2016
89Inventor score
Top patents by PatentIndex Score
10 records- 0184US6011281ASemiconductor device having an ohmic contact and a Schottky contact, with a barrier layer interposed between the ohmic contact and the Schottky contactFUJITSU QUANTUM DEVICES LTD·Filed 1998·Granted Jan 4, 2000·53 cites·18 claims
- 0264US6642099B2Method of manufacturing compound semiconductor deviceFUJITSU QUANTUM DEVICES LTD·Filed 2002·Granted Nov 4, 2003·12 cites·6 claims
- 0361US6146931AMethod of forming a semiconductor device having a barrier layer interposed between the ohmic contact and the schottky contactFUJITSU QUANTUM DEVICES LTD·Filed 1999·Granted Nov 14, 2000·17 cites·2 claims
- 0460US7550831B2Electronic device and semiconductor deviceEUDYNA DEVICES INC·Filed 2006·Granted Jun 23, 2009·2 cites·10 claims
- 0557US6214639B1Method of producing a semiconductor deviceFUJITSU QUANTUM DEVICES LTD·Filed 1999·Granted Apr 10, 2001·23 cites·15 claims
- 0657US5418093AProjection exposure method and an optical mask for use in projection exposureFUJITSU LTD·Filed 1994·Granted May 23, 1995·14 cites·15 claims
- 0750US5876877APatterned mask having a transparent etching stopper layerFUJITSU LTD·Filed 1991·Granted Mar 2, 1999·10 cites·15 claims
- 0844US7855450B2Circuit moduleFUJITSU LTD·Filed 2006·Granted Dec 21, 2010·0 cites·20 claims
- 0943US9824939B2Semiconductor assembly and method to form the sameSEDI INC·Filed 2016·Granted Nov 21, 2017·0 cites·7 claims
- 1039US6404004B1Compound semiconductor device and method of manufacturing the sameFUJITSU QUANTUM DEVICES LTD·Filed 1999·Granted Jun 11, 2002·7 cites·7 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →