Inventor · disambiguated record
Yen-Tien Lu
Also filed as: LU YEN · LU YEN-TIEN
15 granted patents·9 pending applications·75 citations·filing 2002–2024
89Inventor score
Top patents by PatentIndex Score
24 records- 0184US11515203B2Selective deposition of conductive cap for fully-aligned-via (FAV)TOKYO ELECTRON LTD·Filed 2020·Granted Nov 29, 2022·2 cites·20 claims
- 0282US11121027B2High aspect ratio via etch using atomic layer deposition protection layerTOKYO ELECTRON LTD·Filed 2018·Granted Sep 14, 2021·4 cites·19 claims
- 0378US7047530B2Method and system for cross platform, parallel processingIBM·Filed 2002·Granted May 16, 2006·28 cites·38 claims
- 0477US11164781B2ALD (atomic layer deposition) liner for via profile control and related applicationsTOKYO ELECTRON LTD·Filed 2019·Granted Nov 2, 2021·2 cites·20 claims
- 0571US7188114B2Persistent data storage for metadata related to web service entitiesIBM·Filed 2003·Granted Mar 6, 2007·28 cites·24 claims
- 0670US10950444B2Metal hard mask layers for processing of microelectronic workpiecesTOKYO ELECTRON LTD·Filed 2019·Granted Mar 16, 2021·1 cites·21 claims
- 0765US11742241B2ALD (atomic layer deposition) liner for via profile control and related applicationsTOKYO ELECTRON LTD·Filed 2021·Granted Aug 29, 2023·0 cites·19 claims
- 0864US11289325B2Radiation of substrates during processing and systems thereofTOKYO ELECTRON LTD·Filed 2021·Granted Mar 29, 2022·0 cites·16 claims
- 0962US7689552B2UDDI metadata query developmentIBM·Filed 2004·Granted Mar 30, 2010·8 cites·12 claims
- 1061US2022189764A1Radiation of Substrates During Processing and Systems ThereofTOKYO ELECTRON LTD·Filed 2022·Application pending·0 cites
- 1158US2025308931A1Method for removing metal-containing materials in small pitch structuresTOKYO ELECTRON LTD·Filed 2024·Application pending·0 cites
- 1257US2025293037A1Method for processing a substrateTOKYO ELECTRON LTD·Filed 2024·Application pending·0 cites
- 1356US2025259891A1Protection structure for liner removalTOKYO ELECTRON LTD·Filed 2024·Application pending·0 cites
- 1454US2024420965A1Method of deposition in high aspect ratio (har) featuresTOKYO ELECTRON LTD·Filed 2023·Application pending·0 cites
- 1553US2024371655A1Protection Layer Formation during Plasma Etching Conductive MaterialsTOKYO ELECTRON LTD·Filed 2023·Application pending·0 cites
- 1653US2025062124A1Methods and structures for improving etch profile of underlying layersTOKYO ELECTRON LTD·Filed 2023·Application pending·0 cites
- 1749US11721578B2Split ash processes for via formation to suppress damage to low-K layersTOKYO ELECTRON LTD·Filed 2020·Granted Aug 8, 2023·0 cites·15 claims
- 1848US8260838B2Extracting web services from resources using a web services resource programming modelLIU JEFFREY YU KWAN·Filed 2004·Granted Sep 4, 2012·2 cites·39 claims
- 1947US11756790B2Method for patterning a dielectric layerTOKYO ELECTRON LTD·Filed 2021·Granted Sep 12, 2023·0 cites·6 claims
- 2045US11688604B2Method for using ultra thin ruthenium metal hard mask for etching profile controlTOKYO ELECTRON LTD·Filed 2019·Granted Jun 27, 2023·0 cites·15 claims
- 2145US10964587B2Atomic layer deposition for low-K trench protection during etchTOKYO ELECTRON LTD·Filed 2019·Granted Mar 30, 2021·0 cites·19 claims
- 2245US8903887B2Extracting web services from resources using a web services resources programming modelLIU JEFFREY YU KWAN·Filed 2012·Granted Dec 2, 2014·0 cites·41 claims
- 2342US2021265205A1Dielectric etch stop layer for reactive ion etch (rie) lag reduction and chamfer corner protectionTOKYO ELECTRON LTD·Filed 2021·Application pending·0 cites
- 2442US2004111671A1Method for selectively reloading frames of a web-pageIBM·Filed 2003·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →