Inventor · disambiguated record
Nobuyuki Sugii
Also filed as: SUGII NOBUYUKI
50 granted patents·18 pending applications·435 citations·filing 1993–2023
98Inventor score
Top patents by PatentIndex Score
68 records- 0194US6936875B2Insulated-gate field-effect transistor, method of fabricating same, and semiconductor device employing sameRENESAS TECH CORP·Filed 2003·Granted Aug 30, 2005·99 cites·11 claims
- 0293US7095043B2Semiconductor device, semiconductor circuit module and manufacturing method of the sameHITACHI LTD·Filed 2004·Granted Aug 22, 2006·83 cites·16 claims
- 0391US11900777B2Work content detection determination device, work content detection determination system, and wearable sensor embedded gloveHITACHI LTD·Filed 2020·Granted Feb 13, 2024·3 cites·15 claims
- 0490US11676655B2Semiconductor integrated circuit device and wearable deviceRENESAS ELECTRONICS CORP·Filed 2022·Granted Jun 13, 2023·1 cites·6 claims
- 0589US11508018B2Work information management system and work information management methodHITACHI LTD·Filed 2018·Granted Nov 22, 2022·5 cites·6 claims
- 0689US8143668B2SiGe MOSFET semiconductor device with sloped source/drain regionsMORITA YUSUKE·Filed 2009·Granted Mar 27, 2012·16 cites·5 claims
- 0787US9646679B2Semiconductor device with mode designation and substrate bias circuitsRENESAS ELECTRONICS CORP·Filed 2015·Granted May 9, 2017·6 cites·1 claims
- 0887US6723541B2Method of producing semiconductor device and semiconductor substrateHITACHI LTD·Filed 2002·Granted Apr 20, 2004·46 cites·10 claims
- 0986US11875694B2Operational information management system and wearable sensorHITACHI LTD·Filed 2019·Granted Jan 16, 2024·2 cites·13 claims
- 1084US7868425B2Semiconductor device and manufacturing method of the sameRENESAS ELECTRONICS CORP·Filed 2008·Granted Jan 11, 2011·8 cites·9 claims
- 1184US7531853B2Semiconductor device and manufacturing method of the sameHITACHI LTD·Filed 2007·Granted May 12, 2009·9 cites·2 claims
- 1282US12154446B2Operational information management system and wearable sensorHITACHI LTD·Filed 2023·Granted Nov 26, 2024·0 cites·7 claims
- 1381US10311943B2Semiconductor integrated circuit device and wearable deviceRENESAS ELECTRONICS CORP·Filed 2018·Granted Jun 4, 2019·3 cites·8 claims
- 1481US8183115B2Method of manufacturing a semiconductor device having elevated layers of differing thicknessISHIGAKI TAKASHI·Filed 2011·Granted May 22, 2012·5 cites·8 claims
- 1580US6903372B1Semiconductor device, method of making the same and liquid crystal display deviceHITACHI LTD·Filed 2000·Granted Jun 7, 2005·23 cites·6 claims
- 1679US9959924B2Semiconductor integrated circuit device and wearable deviceRENESAS ELECTRONICS CORP·Filed 2017·Granted May 1, 2018·3 cites·7 claims
- 1779US7944024B2Semiconductor device and manufacturing method of the sameRENESAS ELECTRONICS CORP·Filed 2010·Granted May 17, 2011·4 cites·5 claims
- 1878US11373700B2Semiconductor integrated circuit device with SOTE and MOS transistorsRENESAS ELECTRONICS CORP·Filed 2019·Granted Jun 28, 2022·1 cites·11 claims
- 1977US7579229B2Semiconductor device and semiconductor substrateRENESAS TECH CORP·Filed 2008·Granted Aug 25, 2009·5 cites·7 claims
- 2077US6545294B1Electronic apparatus having semiconductor device including plurality of transistors formed on a polycrystalline layered structure in which the number of crystal grains in each polycrystalline layer is gradually reduced from lower to upper layerHITACHI LTD·Filed 2000·Granted Apr 8, 2003·17 cites·2 claims
- 2176US6878606B2Fabrication method and device structure of shallow trench insulation for silicon wafer containing silicon-germaniumRENESAS TECH CORP·Filed 2003·Granted Apr 12, 2005·20 cites·8 claims
- 2275US8680553B2Light-emitting device, light-receiving device and method of manufacturing the sameSAITO SHINICHI·Filed 2009·Granted Mar 25, 2014·3 cites·10 claims
- 2375US8350328B2Semiconductor device and method of manufacturing the sameHITACHI LTD·Filed 2010·Granted Jan 8, 2013·4 cites·15 claims
- 2473US10203688B2Manufacturing device, system and method for outputting a manufacturing process flow having the shortest total process time among a plurality of manufacturing process flowsHITACHI LTD·Filed 2017·Granted Feb 12, 2019·1 cites·11 claims
- 2573US7436046B2Semiconductor device and manufacturing method of the sameRENESAS TECH CORP·Filed 2005·Granted Oct 14, 2008·4 cites·19 claims
- 2672US12266252B2Work content detection determination device, work content detection determination system, and wearable sensor embedded gloveHITACHI LTD·Filed 2023·Granted Apr 1, 2025·0 cites·19 claims
- 2772US7317207B2Semiconductor device, method of making the same and liquid crystal display deviceHITACHI LTD·Filed 2005·Granted Jan 8, 2008·4 cites·2 claims
- 2869US7812398B2Semiconductor device including a P-type field-effect transistorHITACHI LTD·Filed 2009·Granted Oct 12, 2010·3 cites·2 claims
- 2967US8304810B2Semiconductor device and semiconductor substrate having selectively etched portions filled with silicon germaniumSUGII NOBUYUKI·Filed 2009·Granted Nov 6, 2012·3 cites·21 claims
- 3064US7029988B2Fabrication method and device structure of shallow trench insulation for silicon wafer containing silicon-germaniumRENESAS TECH CORP·Filed 2004·Granted Apr 18, 2006·10 cites·19 claims
- 3163US7045412B2Field-effect type semiconductor device for power amplifierRENESAS TECH CORP·Filed 2004·Granted May 16, 2006·9 cites·11 claims
- 3262US7890898B2Method for semiconductor circuitHITACHI LTD·Filed 2008·Granted Feb 15, 2011·2 cites·4 claims
- 3361US6815707B2Field-effect type semiconductor device for power amplifierRENESAS TECH CORP·Filed 2002·Granted Nov 9, 2004·8 cites·16 claims
- 3459US12411547B2Pressure sensor device, method for manufacturing the same, and work management system using the sameHITACHI LTD·Filed 2022·Granted Sep 9, 2025·0 cites·11 claims
- 3559US11156650B2State detecting system and state detecting methodHITACHI LTD·Filed 2019·Granted Oct 26, 2021·0 cites·10 claims
- 3654US11653882B2Sensor data correction systemHITACHI LTD·Filed 2020·Granted May 23, 2023·0 cites·7 claims
- 3754US2024318848A1Environmental control device, environmental control method, and environmental control programHITACHI LTD·Filed 2021·Application pending·0 cites
- 3853US6888162B2Electronic apparatus having polycrystalline semiconductor thin film structureHITACHI LTD·Filed 2003·Granted May 3, 2005·3 cites·12 claims
- 3953US2009096036A1Semiconductor device and method of manufacturing the sameISHIGAKI TAKASHI·Filed 2008·Application pending·0 cites
- 4052US11835412B2Delicate work tool digitalization systemHITACHI LTD·Filed 2021·Granted Dec 5, 2023·0 cites·9 claims
- 4151US2023160593A1Behavioral Change Promoting Device, Behavioral Change Promoting System, and Behavioral Change Promoting MethodHITACHI LTD·Filed 2022·Application pending·0 cites
- 4250US6727514B2Thin-film semiconductor integrated circuit device and picture display device with using thereof and manufacturing method thereofHITACHI LTD·Filed 2001·Granted Apr 27, 2004·4 cites·8 claims
- 4348US2008203403A1Semiconductor integrated circuitKAWAHARA TAKAYUKI·Filed 2007·Application pending·0 cites
- 4448US2008111134A1Semiconductor device, method of making the same and liquid crystal display deviceYAMAGUCHI SHINYA·Filed 2008·Application pending·0 cites
- 4546US10605824B2MEMS manufacturing method and MEMS manufacturing apparatusHITACHI LTD·Filed 2016·Granted Mar 31, 2020·0 cites·12 claims
- 4645US2012061774A1Semiconductor device and manufacturing method of the sameMORITA YUSUKE·Filed 2011·Application pending·0 cites
- 4745US2011188329A1Semiconductor integrated circuitRENESAS ELECTRONICS CORP·Filed 2011·Application pending·0 cites
- 4844US10410826B2Device processing method and device processing apparatusHITACHI LTD·Filed 2016·Granted Sep 10, 2019·0 cites·14 claims
- 4944US6897129B2Fabrication method of semiconductor device and semiconductor deviceRENESAS E JP SEMICONDUCTOR INC·Filed 2003·Granted May 24, 2005·2 cites·7 claims
- 5043US10336609B2Microstructure processing method and microstructure processing apparatusHITACHI LTD·Filed 2017·Granted Jul 2, 2019·0 cites·10 claims
Showing the top 50 of 68 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →