Inventor · disambiguated record
Katsuyoshi Anzai
Also filed as: ANZAI KATSUYOSHI
3 granted patents·20 citations·filing 2003–2007
67Inventor score
Technology areasH10D
Top patents by PatentIndex Score
3 records- 0162US8735997B2Semiconductor device having drain/source surrounded by impurity layer and manufacturing method thereofHACHIYANAGI TOSHIHIRO·Filed 2007·Granted May 27, 2014·5 cites·9 claims
- 0259US6844593B2Semiconductor deviceSANYO ELECTRIC CO·Filed 2003·Granted Jan 18, 2005·9 cites·9 claims
- 0353US6893926B2Manufacturing method of semiconductor device with protection against electrostatic dischargeSANYO ELECTRIC CO·Filed 2003·Granted May 17, 2005·6 cites·6 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →