Inventor · disambiguated record
Koon Chong So
Also filed as: SO KOON CHONG
67 granted patents·4 pending applications·2,831 citations·filing 1996–2011
99Inventor score
Files withGEN SEMICONDUCTOR INC42MEGAMOS CORP13ANDERSON SAMUEL3MAGEPOWER SEMICONDUCTOR CORP3MAGEMOS CORP2
Top patents by PatentIndex Score
71 records- 0198US6621107B2Trench DMOS transistor with embedded trench schottky rectifierGEN SEMICONDUCTOR INC·Filed 2001·Granted Sep 16, 2003·179 cites·26 claims
- 0298US5877528AStructure to provide effective channel-stop in termination areas for trenched power transistorsMEGAMOS CORP·Filed 1997·Granted Mar 2, 1999·287 cites·9 claims
- 0397US5895951AMOSFET structure and fabrication process implemented by forming deep and narrow doping regions through doping trenchesMEGAMOS CORP·Filed 1996·Granted Apr 20, 1999·239 cites·11 claims
- 0496US6593620B1Trench DMOS transistor with embedded trench schottky rectifierGEN SEMICONDUCTOR INC·Filed 2000·Granted Jul 15, 2003·123 cites·25 claims
- 0596US6475884B2Devices and methods for addressing optical edge effects in connection with etched trenchesGEN SEMICONDUCTOR INC·Filed 2001·Granted Nov 5, 2002·86 cites·11 claims
- 0696US6472708B1Trench MOSFET with structure having low gate chargeGEN SEMICONDUCTOR INC·Filed 2000·Granted Oct 29, 2002·98 cites·9 claims
- 0796US6472678B1Trench MOSFET with double-diffused body profileGEN SEMICONDUCTOR INC·Filed 2000·Granted Oct 29, 2002·102 cites·13 claims
- 0895US6657254B2Trench MOSFET device with improved on-resistanceGEN SEMICONDUCTOR INC·Filed 2001·Granted Dec 2, 2003·86 cites·14 claims
- 0994US6281547B1Power transistor cells provided with reliable trenched source contacts connected to narrower source manufactured without a source maskMEGAMOS CORP·Filed 1997·Granted Aug 28, 2001·127 cites·10 claims
- 1094US5907776AMethod of forming a semiconductor structure having reduced threshold voltage and high punch-through toleranceMAGEPOWER SEMICONDUCTOR CORP·Filed 1997·Granted May 25, 1999·130 cites·29 claims
- 1192US7052982B2Method for manufacturing a superjunction device with wide mesasTHIRD DIMENSION 3D SC INC·Filed 2004·Granted May 30, 2006·60 cites·28 claims
- 1292US6762098B2Trench DMOS transistor with embedded trench schottky rectifierGEN SEMICONDUCTOR INC·Filed 2003·Granted Jul 13, 2004·59 cites·6 claims
- 1392US6376315B1Method of forming a trench DMOS having reduced threshold voltageGEN SEMICONDUCTOR INC·Filed 2000·Granted Apr 23, 2002·67 cites·24 claims
- 1492US5763915ADMOS transistors having trenched gate oxideMAGEMOS CORP·Filed 1996·Granted Jun 9, 1998·149 cites·7 claims
- 1591US6674124B2Trench MOSFET having low gate chargeGEN SEMICONDUCTOR INC·Filed 2001·Granted Jan 6, 2004·49 cites·16 claims
- 1690US6518127B2Trench DMOS transistor having a double gate structureGEN SEMICONDUCTOR INC·Filed 2001·Granted Feb 11, 2003·48 cites·2 claims
- 1789US6548860B1DMOS transistor structure having improved performanceGEN SEMICONDUCTOR INC·Filed 2000·Granted Apr 15, 2003·47 cites·22 claims
- 1888US6312993B1High speed trench DMOSGEN SEMICONDUCTOR INC·Filed 2000·Granted Nov 6, 2001·34 cites·36 claims
- 1987US6777745B2Symmetric trench MOSFET device and method of making sameGEN SEMICONDUCTOR INC·Filed 2001·Granted Aug 17, 2004·36 cites·18 claims
- 2086US5907169ASelf-aligned and process-adjusted high density power transistor with gate sidewalls provided with punch through prevention and reduced JFET resistanceMEGAMOS CORP·Filed 1997·Granted May 25, 1999·65 cites·20 claims
- 2185US6979621B2Trench MOSFET having low gate chargeGEN SEMICONDUCTOR INC·Filed 2004·Granted Dec 27, 2005·32 cites·4 claims
- 2285US6822288B2Trench MOSFET device with polycrystalline silicon source contact structureGEN SEMICONDUCTOR INC·Filed 2001·Granted Nov 23, 2004·32 cites·16 claims
- 2385US6445037B1Trench DMOS transistor having lightly doped source structureGEN SEMICONDUCTOR INC·Filed 2000·Granted Sep 3, 2002·37 cites·28 claims
- 2484US8736019B2Semiconductor devices with sealed, unlined trenches and methods of forming sameANDERSON SAMUEL·Filed 2011·Granted May 27, 2014·6 cites·10 claims
- 2584US6707127B1Trench schottky rectifierGEN SEMICONDUCTOR INC·Filed 2000·Granted Mar 16, 2004·30 cites·9 claims
- 2681US6048759AGate/drain capacitance reduction for double gate-oxide DMOS without degrading avalanche breakdownMAGEPOWER SEMICONDUCTOR CORP·Filed 1998·Granted Apr 11, 2000·49 cites·19 claims
- 2780US8716829B2Semiconductor devices with sealed, unlined trenches and methods of forming sameANDERSON SAMUEL·Filed 2011·Granted May 6, 2014·4 cites·10 claims
- 2880US7364994B2Method for manufacturing a superjunction device with wide mesasTHIRD DIMENSION 3D SC INC·Filed 2006·Granted Apr 29, 2008·6 cites·22 claims
- 2980US6849899B2High speed trench DMOSGEN SEMICONDUCTOR INC·Filed 2003·Granted Feb 1, 2005·20 cites·3 claims
- 3080US5986304APunch-through prevention in trenched DMOS with poly-silicon layer covering trench cornersMEGAMOS CORP·Filed 1997·Granted Nov 16, 1999·47 cites·9 claims
- 3179US7944018B2Semiconductor devices with sealed, unlined trenches and methods of forming sameICEMOS TECHNOLOGY LTD·Filed 2007·Granted May 17, 2011·5 cites·1 claims
- 3279US6545315B2Trench DMOS transistor having reduced punch-throughGEN SEMICONDUCTOR INC·Filed 2001·Granted Apr 8, 2003·22 cites·18 claims
- 3377US8129252B2Semiconductor devices with sealed, unlined trenches and methods of forming sameANDERSON SAMUEL·Filed 2009·Granted Mar 6, 2012·4 cites·16 claims
- 3477US6620691B2Semiconductor trench device with enhanced gate oxide integrity structureGEN SEMICONDUCTOR INC·Filed 2001·Granted Sep 16, 2003·22 cites·14 claims
- 3575US6657255B2Trench DMOS device with improved drain contactGEN SEMICONDUCTOR INC·Filed 2001·Granted Dec 2, 2003·19 cites·16 claims
- 3674US6580141B2Trench schottky rectifierGEN SEMICONDUCTOR INC·Filed 2001·Granted Jun 17, 2003·16 cites·9 claims
- 3772US6740951B2Two-mask trench schottky diodeGEN SEMICONDUCTOR INC·Filed 2001·Granted May 25, 2004·17 cites·26 claims
- 3871US6645815B2Method for forming trench MOSFET device with low parasitic resistanceGEN SEMICONDUCTOR INC·Filed 2001·Granted Nov 11, 2003·15 cites·20 claims
- 3970US6657256B2Trench DMOS transistor having a zener diode for protection from electro-static dischargeGEN SEMICONDUCTOR INC·Filed 2001·Granted Dec 2, 2003·14 cites·10 claims
- 4070US5729037AMOSFET structure and fabrication process for decreasing threshold voltageMEGAMOS CORP·Filed 1996·Granted Mar 17, 1998·30 cites·7 claims
- 4169US5960275APower MOSFET fabrication process to achieve enhanced ruggedness, cost savings, and product reliabilityMAGEMOS CORP·Filed 1996·Granted Sep 28, 1999·30 cites·12 claims
- 4269US5923065APower MOSFET device manufactured with simplified fabrication processes to achieve improved ruggedness and product cost savingsMEGAMOS CORP·Filed 1996·Granted Jul 13, 1999·30 cites·6 claims
- 4367US5668026ADMOS fabrication process implemented with reduced number of masksMEGAMOS CORP·Filed 1996·Granted Sep 16, 1997·34 cites·7 claims
- 4465US6977203B2Method of forming narrow trenches in semiconductor substratesGEN SEMICONDUCTOR INC·Filed 2001·Granted Dec 20, 2005·10 cites·10 claims
- 4565US5877529AMosfet termination design and core cell configuration to increase breakdown voltage and to improve device ruggednessMEGAMOS CORP·Filed 1997·Granted Mar 2, 1999·24 cites·16 claims
- 4665US5747853ASemiconductor structure with controlled breakdown protectionMEGAMOS CORP·Filed 1996·Granted May 5, 1998·30 cites·18 claims
- 4764US6770548B2Trench schottky rectifierGEN SEMICONDUCTOR INC·Filed 2003·Granted Aug 3, 2004·9 cites·10 claims
- 4864US6627951B2High speed trench DMOSGEN SEMICONDUCTOR INC·Filed 2001·Granted Sep 30, 2003·8 cites·18 claims
- 4963US6713352B2Method of forming a trench MOSFET with structure having increased cell density and low gate chargeGEN SEMICONDUCTOR INC·Filed 2002·Granted Mar 30, 2004·9 cites·13 claims
- 5063US6555895B1Devices and methods for addressing optical edge effects in connection with etched trenchesGEN SEMICONDUCTOR INC·Filed 2000·Granted Apr 29, 2003·6 cites·13 claims
Showing the top 50 of 71 patent records by PatentIndex Score.
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