Inventor · disambiguated record
Johannes Kretz
Also filed as: KRETZ JOHANNES
9 granted patents·5 pending applications·209 citations·filing 1998–2007
88Inventor score
Files withINFINEON TECHNOLOGIES AG8CHOI KANG-HOON1HOFMANN FRANZ1INFINEON TECHNOLOGIES INC1KRETZ JOHANNES1
Top patents by PatentIndex Score
14 records- 0195US6740910B2Field-effect transistor, circuit configuration and method of fabricating a field-effect transistorINFINEON TECHNOLOGIES AG·Filed 2003·Granted May 25, 2004·127 cites·16 claims
- 0288US7411822B2Nonvolatile memory cell arrangementINFINEON TECHNOLOGIES AG·Filed 2005·Granted Aug 12, 2008·22 cites·19 claims
- 0373US7265376B2Non-volatile memory cell, memory cell arrangement and method for production of a non-volatile memory cellINFINEON TECHNOLOGIES INC·Filed 2003·Granted Sep 4, 2007·19 cites·26 claims
- 0465US7709827B2Vertically integrated field-effect transistor having a nanostructure thereinQIMONDA AG·Filed 2003·Granted May 4, 2010·12 cites·20 claims
- 0565US7635867B2Nanotube array and method for producing a nanotube arrayINFINEON TECHNOLOGIES AG·Filed 2002·Granted Dec 22, 2009·5 cites·14 claims
- 0659US7189988B2Molecular electronics arrangement and method for producing a molecular electronics arrangementINFINEON TECHNOLOGIES AG·Filed 2002·Granted Mar 13, 2007·7 cites·30 claims
- 0758US6528807B1Method for applying or removing materialFiled 1998·Granted Mar 4, 2003·14 cites·19 claims
- 0849US7265424B2Fin Field-effect transistor and method for producing a fin field effect-transistorINFINEON TECHNOLOGIES AG·Filed 2004·Granted Sep 4, 2007·3 cites·17 claims
- 0943US2005276093A1Memory cell, memory cell arrangement, patterning arrangement, and method for fabricating a memory cellINFINEON TECHNOLOGIES AG·Filed 2005·Application pending·0 cites
- 1042US2008035997A1Fin Field-Effect Transistor and Method for Fabricating a Fin Field-Effect TransistorHOFMANN FRANZ·Filed 2007·Application pending·0 cites
- 1137US2007018218A1Fin field effect transistor memory cell, fin field effect transistor memory cell arrangement and method for producing the fin field effect transistor memory cellKRETZ JOHANNES·Filed 2006·Application pending·0 cites
- 1237US2006001058A1Fin field effect transistor memory cellINFINEON TECHNOLOGIES AG·Filed 2005·Application pending·0 cites
- 1334US8227177B2Method for multiple irradiation of a resistCHOI KANG-HOON·Filed 2007·Granted Jul 24, 2012·0 cites·26 claims
- 1434US2005224888A1Integrated circuit arrayINFINEON TECHNOLOGIES AG·Filed 2005·Application pending·0 cites
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →