Inventor · disambiguated record
Katsuyoshi Shibuya
Also filed as: SHIBUYA KATSUYOSHI
10 granted patents·3 pending applications·102 citations·filing 2001–2013
89Inventor score
Top patents by PatentIndex Score
13 records- 0188US6509579B2Semiconductor deviceSONY CORP·Filed 2001·Granted Jan 21, 2003·45 cites·20 claims
- 0282US6829270B2Nitride III-V compound semiconductor substrate, its manufacturing method, manufacturing method of a semiconductor light emitting device, and manufacturing method of a semiconductor deviceSONY CORP·Filed 2002·Granted Dec 7, 2004·24 cites·9 claims
- 0381US7964419B2Semiconductor light emitting device, its manufacturing method, semiconductor device and its manufacturing methodSONY CORP·Filed 2008·Granted Jun 21, 2011·4 cites·13 claims
- 0473US6836498B2Semiconductor laser, semiconductor device and nitride series III-V group compound substrate, as well as manufacturing method thereofSONY CORP·Filed 2001·Granted Dec 28, 2004·14 cites·18 claims
- 0570US7339195B2Semiconductor light emitting device, its manufacturing method, semiconductor device and its manufacturing methodSONY CORP·Filed 2003·Granted Mar 4, 2008·6 cites·18 claims
- 0665US7439546B2Semiconductor light emitting device, its manufacturing method, semiconductor device and its manufacturing methodSONY CORP·Filed 2006·Granted Oct 21, 2008·1 cites·6 claims
- 0760US6890785B2Nitride semiconductor, semiconductor device, and manufacturing methods for the sameSONY CORP·Filed 2003·Granted May 10, 2005·6 cites·7 claims
- 0854US8587004B2Semiconductor light emitting device, its manufacturing method, semiconductor device and its manufacturing methodSONY CORP·Filed 2013·Granted Nov 19, 2013·0 cites·5 claims
- 0950US7026179B2Method of manufacturing a semiconductor light emitting device utilizing a nitride III-V compound semiconductor substrateSONY CORP·Filed 2004·Granted Apr 11, 2006·2 cites·15 claims
- 1048US8460958B2Semiconductor light emitting device, its manufacturing method, semiconductor device and its manufacturing methodGOTO OSAMU·Filed 2011·Granted Jun 11, 2013·0 cites·5 claims
- 1143US2005000407A1Semiconductor laser, semiconductor device and nitride series III-V group compound substrate, as well as manufacturing method thereofSONY CORP·Filed 2004·Application pending·0 cites
- 1243US2005098791A1Nitride semiconductor, semiconductor device, and manufacturing methods for the sameSONY CORP·Filed 2004·Application pending·0 cites
- 1335US2001025989A1Semiconductor device and method of manufacturing the sameFiled 2001·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →